LegalizeCommission Implementing Regulation (EU) 2019/1083 of 21 June 2019 amending Council Regulation (EU) 2017/1509 concerning restrictive measures against the Democratic People's Republic of Korea
This is the act as published. Later amendments are not folded into the text below: each one is a separate act in this repository and an entry in this law's history.
| No | Description | Related item from Annex I to Regulation (EC) No 428/2009 |
|---|---|---|
| IX.A3.001 | Electronic items, as follows: (a) General-purpose integrated circuits, as follows: Notes: 1. The status of wafers (finished or unfinished), in which the function has been determined, is to be evaluated against the parameters of 3A001.a. 2. Integrated circuits include the following types: — “Monolithic integrated circuits”; — “Hybrid integrated circuits”; — “Multichip integrated circuits”; — “Film-type integrated circuits”, including silicon-on-sapphire integrated circuits; — “Optical integrated circuits”; — “Three-dimensional integrated circuits”; — “Monolithic Microwave Integrated Circuits” (“MMICs”). | 3A001.a |
| IX.A3.002 | Integrated circuits designed or rated as radiation hardened to withstand any of the following: (a) A total dose of 5 × 103 Gy (Si) or higher; (b) A dose rate upset of 5 × 106 Gy (Si)/s or higher; or (c) A fluence (integrated flux) of neutrons (1 MeV equivalent) of 5 × 1 013 n/cm2 or higher on silicon, or its equivalent for other materials; Note: The category above does not apply to Metal Insulator Semiconductors (MIS). | 3A001.a. |
| IX.A3.003 | “Microprocessor microcircuits”, “microcomputer microcircuits”, microcontroller microcircuits, storage integrated circuits manufactured from a compound semiconductor, analogue-to-digital converters, integrated circuits that contain analogue-to-digital converters and store or process the digitized data, digital-to-analogue converters, electro-optical or “optical integrated circuits” designed for “signal processing”, field programmable logic devices, custom integrated circuits for which either the function is unknown or the status of the equipment in which the integrated circuit will be used is unknown, Fast Fourier Transform (FFT) processors, Electrical Erasable Programmable Read-Only Memories (EEPROMs), flash memories, Static Random-Access Memories (SRAMs) or Magnetic Random-Access Memories (MRAMs), having any of the following: (a) Rated for operation at an ambient temperature above 398 K (+ 125 °C); (b) Rated for operation at an ambient temperature below 218 K (– 55 °C); or (c) Rated for operation over the entire ambient temperature range from 218 K (– 55 °C) to 398 K (+ 125 °C); Note: This category does not apply to integrated circuits for civil automobile or railway train applications. | 3A001.a.2 |
| IX.A3.004 | Electro-optical and “optical integrated circuits”, designed for “signal processing” and having all of the following: (a) One or more than one internal “laser” diode; (b) One or more than one internal light detecting element; and (c) Optical waveguides; | 3A001.a. |
| IX.A3.005 | 4. Field programmable logic devices having any of the following: (a) A maximum number of single-ended digital input/outputs of greater than 700; or (b) An “aggregate one-way peak serial transceiver data rate” of 500 Gb/s or greater; Note: This category includes — Simple Programmable Logic Devices (SPLDs); — Complex Programmable Logic Devices (CPLDs); — Field Programmable Gate Arrays (FPGAs); — Field Programmable Logic Arrays (FPLAs); — Field Programmable Interconnects (FPICs). | 3A001.a. |
| IX.A3.006 | Neural network integrated circuits; | 3A001.a. |
| IX.A3.007 | Custom integrated circuits for which the function is unknown, or the status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following: (a) More than 1 500 terminals; (b) A typical “basic gate propagation delay time” of less than 0,02 ns; or (c) An operating frequency exceeding 3 GHz; | 3A001.a. |
| IX.A3.008 | Direct Digital Synthesizer (DDS) integrated circuits having any of the following: (a) A Digital-to-Analogue Converter (DAC) clock frequency of 3,5 GHz or more and a DAC resolution of 10 bit or more, but less than 12 bit; or (b) A DAC clock frequency of 1,25 GHz or more and a DAC resolution of 12 bit or more; Technical note: The DAC clock frequency may be specified as the master clock frequency or the input clock frequency. | 3A001.a. |
| IX.A3.009 | Microwave or millimetre wave items, as follows: (a) Travelling-wave “vacuum electronic devices”, pulsed or continuous wave; 1. Devices operating at frequencies exceeding 31,8 GHz; 2. Devices having a cathode heater with a turn-on time to rated RF power of less than 3 seconds; 3. Coupled cavity devices, or derivatives thereof, with a “fractional bandwidth” of more than 7 % or a peak power exceeding 2,5 kW; 4. Devices based on helix, folded waveguide, or serpentine waveguide circuits, or derivatives thereof, having any of the following: a. An “instantaneous bandwidth” of more than one octave, and average power (expressed in kW) times frequency (expressed in GHz) of more than 0,5; b. An “instantaneous bandwidth” of one octave or less, and average power (expressed in kW) times frequency (expressed in GHz) of more than 1; c. Being “space-qualified”; or d. Having a gridded electron gun; 5. Devices with a “fractional bandwidth” of greater than or equal to 10 %, with any of the following: a. An annular electron beam; b. A non-axisymmetric electron beam; or c. Multiple electron beams; (b) Crossed-field amplifier “vacuum electronic devices” with a gain of more than 17 dB; (c) Thermionic cathodes designed for “vacuum electronic devices” producing an emission current density at rated operating conditions exceeding 5 A/cm2 or a pulsed (non-continuous) current density at rated operating conditions exceeding 10 A/cm2; (d) “Vacuum electronic devices” with the capability to operate in a “dual mode”; Technical note: “Dual mode” means that the “vacuum electronic device” beam current can be intentionally changed between continuous-wave and pulsed mode operation by use of a grid and produces a peak pulse output power greater than the continuous-wave output power. | 3A001.b. |
| IX.A3.010 | “Monolithic Microwave Integrated Circuit” (“MMIC”) amplifiers that are any of the following: (a) Rated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz with a “fractional bandwidth” of greater than 15 %, and having any of the following: 1. A peak saturated power output greater than 75 W (48,75 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz; 2. A peak saturated power output greater than 55 W (47,4 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz; 3. A peak saturated power output greater than 40 W (46 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or 4. A peak saturated power output greater than 20 W (43 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz; (b) Rated for operation at frequencies exceeding 6,8 GHz up to and including 16 GHz with a “fractional bandwidth” of greater than 10 %, and having any of the following: 1. A peak saturated power output greater than 10W (40 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz; or 2. A peak saturated power output greater than 5W (37 dBm) at any frequency exceeding 8,5 GHz up to and including 16 GHz; (c) Rated for operation with a peak saturated power output greater than 3 W (34,77 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz, and with a “fractional bandwidth” of greater than 10 %; (d) Rated for operation with a peak saturated power output greater than 0,1n W (– 70 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz; (e) Rated for operation with a peak saturated power output greater than 1 W (30 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz, and with a “fractional bandwidth” of greater than 10 %; (f) Rated for operation with a peak saturated power output greater than 31,62 mW (15 dBm) at any frequency exceeding 43,5 GHz up to and including 75 GHz, and with a “fractional bandwidth” of greater than 10 %; (g) Rated for operation with a peak saturated power output greater than 10 mW (10 dBm) at any frequency exceeding 75 GHz up to and including 90 GHz, and with a “fractional bandwidth” of greater than 5 %; or (h) Rated for operation with a peak saturated power output greater than 0,1 nW (– 70 dBm) at any frequency exceeding 90 GHz; Notes: 1. The status of the MMIC whose rated operating frequency includes frequencies listed in more than one frequency range is determined by the lowest peak saturated power output threshold. 2. This category does not apply to MMICs if they are specially designed for other applications, e.g., telecommunications, radar, automobiles. | 3A001.b. |
| IX.A3.011 | Discrete microwave transistors that are any of the following: a. Rated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz and having any of the following: 1. A peak saturated power output greater than 400 W (56 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz; 2. A peak saturated power output greater than 205 W (53,12 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz; 3. A peak saturated power output greater than 115 W (50,61 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or 4. A peak saturated power output greater than 60 W (47,78 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz; b. Rated for operation at frequencies exceeding 6,8 GHz up to and including 31,8 GHz and having any of the following: 1. A peak saturated power output greater than 50 W (47 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz; 2. A peak saturated power output greater than 15 W (41,76 dBm) at any frequency exceeding 8,5 GHz up to and including 12 GHz; 3. A peak saturated power output greater than 40 W (46 dBm) at any frequency exceeding 12 GHz up to and including 16 GHz; or 4. A peak saturated power output greater than 7 W (38,45 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz; c. Rated for operation with a peak saturated power output greater than 0,5 W (27 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz; d. Rated for operation with a peak saturated power output greater than 1 W (30 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz; or e. Rated for operation with a peak saturated power output greater than 0,1 nW (-70 dBm) at any frequency exceeding 43,5 GHz; Notes: 1. The status of a transistor whose rated operating frequency includes frequencies listed in more than one frequency range is determined by the lowest peak saturated power output threshold. 2. This category includes bare dice, dice mounted on carriers or dice mounted in packages. Some discrete transistors may also be referred to as power amplifiers. | 3A001.b. |
| IX.A3.012 | Microwave solid-state amplifiers and microwave assemblies/modules containing microwave solid-state amplifiers that are any of the following: (a) Rated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz with a “fractional bandwidth” of greater than 15 % and having any of the following: 1. A peak saturated power output greater than 500 W (57 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz; 2. A peak saturated power output greater than 270 W (54,3 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz; 3. A peak saturated power output greater than 200 W (53 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or 4. A peak saturated power output greater than 90 W (49,54 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz; (b) Rated for operation at frequencies greater than 6,8 GHz up to and including 31,8 GHz with a “fractional bandwidth” of greater than 10 % and having any of the following: 1. A peak saturated power output greater than 70 W (48,54 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz; 2. A peak saturated power output greater than 50 W (47 dBm) at any frequency exceeding 8,5 GHz up to and including 12 GHz; 3. A peak saturated power output greater than 30 W (44,77 dBm) at any frequency exceeding 12 GHz up to and including 16 GHz; or 4. A peak saturated power output greater than 20 W (43 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz; (c) Rated for operation with a peak saturated power output greater than 0,5 W (27 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz; (d) Rated for operation with a peak saturated power output greater than 2 W (33 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz, and with a “fractional bandwidth” of greater than 10 %; (e) Rated for operation at frequencies exceeding 43,5 GHz and having any of the following: 1. A peak saturated power output greater than 0,2 W (23 dBm) at any frequency exceeding 43,5 GHz up to and including 75 GHz, and with a “fractional bandwidth” of greater than 10 %; 2. A peak saturated power output greater than 20 mW (13 dBm) at any frequency exceeding 75 GHz up to and including 90 GHz, and with a “fractional bandwidth” of greater than 5 %; or 3. A peak saturated power output greater than 0,1 nW (- 70 dBm) at any frequency exceeding 90 GHz; Note: The status of an item whose rated operating frequency includes frequencies listed in more than one frequency range is determined by the lowest peak saturated power output threshold. | 3A001.b. |
| IX.A3.013 | Electronically or magnetically tunable band-pass or band-stop filters, having more than 5 tunable resonators capable of tuning across a 1,5:1 frequency band (fmax/fmin) in less than 10 μs and having any of the following: (a) A band-pass bandwidth of more than 0,5 % of centre frequency; or (b) A band-stop bandwidth of less than 0,5 % of centre frequency; | 3A001.b. |
| IX.A3.014 | Converters and harmonic mixers that are any of the following: (a) Designed to extend the frequency range of “signal analysers” beyond 90 GHz; (b) Designed to extend the operating range of signal generators as follows: 1. Beyond 90 GHz; 2. To an output power greater than 100 mW (20 dBm) anywhere within the frequency range exceeding 43,5 GHz but not exceeding 90 GHz; (c) Designed to extend the operating range of network analysers as follows: 1. Beyond 110 GHz; 2. To an output power greater than 31,62 mW (15 dBm) anywhere within the frequency range exceeding 43,5 GHz but not exceeding 90 GHz; 3. To an output power greater than 1 mW (0 dBm) anywhere within the frequency range exceeding 90 GHz but not exceeding 110 GHz; or (d) Designed to extend the frequency range of microwave test receivers beyond 110 GHz; | 3A001.b. |
| IX.A3.015 | Microwave power amplifiers containing “vacuum electronic devices” specified above and having all of the following: (a) Operating frequencies above 3 GHz; (b) An average output power to mass ratio exceeding 80 W/kg; and (c) A volume of less than 400 cm3; Note: This category does not apply to equipment designed or rated for operation in any frequency band which is “allocated by the International Telecommunication Union (ITU)” for radio communications services, but not for radio determination. | 3A001.b. |
| IX.A3.016 | Microwave Power Modules (MPMs) consisting of, at least, a travelling-wave “vacuum electronic device”, a “Monolithic Microwave Integrated Circuit” (“MMIC”) and an integrated electronic power conditioner and having all of the following: (a) A “turn-on time” from off to fully operational in less than 10 seconds; (b) A volume less than the maximum rated power in watts multiplied by 10 cm3/W; and (c) An “instantaneous bandwidth” of greater than 1 octave (fmax > 2fmin) and having any of the following: 1. For frequencies equal to or less than 18 GHz, an RF output power greater than 100 W; or 2. A frequency greater than 18 GHz; Technical notes: 1. To calculate the volume in item b. above, the following example is provided: for a maximum rated power of 20 W, the volume would be: 20 W × 10 cm3/W = 200 cm3. 2. The “turn-on time” in item a. above refers to the time from fully off to fully operational, i.e., it includes the warm-up time of the MPM. | 3A001.b. |
| IX.A3.017 | Oscillators or oscillator assemblies, specified to operate with a single sideband (SSB) phase noise, in dBc/Hz, less (better) than -(126 + 20log10F -20log10f) anywhere within the range of 10 Hz ≤ F ≤ 10 kHz; Technical note: In the category above, F is the offset from the operating frequency in Hz and f is the operating frequency in MHz. | 3A001.b. |
| IX.A3.018 | “Frequency synthesizer”“electronic assemblies” having a “frequency switching time” as specified by any of the following: (a) Less than 143 ps; (b) Less than 100 μs for any frequency change exceeding 2,2 GHz within the synthesized frequency range exceeding 4,8 GHz but not exceeding 31,8 GHz; (c) Less than 500 μs for any frequency change exceeding 550 MHz within the synthesized frequency range exceeding 31,8 GHz but not exceeding 37 GHz; (d) Less than 100 μs for any frequency change exceeding 2,2 GHz within the synthesized frequency range exceeding 37 GHz but not exceeding 90 GHz; or (e) Less than 1 ms within the synthesized frequency range exceeding 90 GHz; | 3A001.b. |
| IX.A3.019 | “Transmit/receive modules”, “transmit/receive MMICs”, “transmit modules” and “transmit MMICs”, rated for operation at frequencies above 2,7 GHz and having all of the following: (a) A peak saturated power output (in watts), Psat, greater than 505,62 divided by the maximum operating frequency (in GHz) squared [Psat > 505,62 W * GHz2/fGHz 2] for any channel; (b) A “fractional bandwidth” of 5 % or greater for any channel; (c) Any planar side with length d (in cm) equal to or less than 15 divided by the lowest operating frequency in GHz [d ≤ 15 cm * GHz * N/fGHz] where N is the number of transmit or transmit/receive channels; and d. An electronically variable phase shifter per channel; Technical notes: 1. A “transmit/receive module” is a multifunction “electronic assembly” that provides bidirectional amplitude and phase control for transmission and reception of signals. 2. A “transmit module” is an “electronic assembly” that provides amplitude and phase control for transmission of signals. 3. A “transmit/receive MMIC” is a multifunction “MMIC” that provides bidirectional amplitude and phase control for transmission and reception of signals. 4. A “transmit MMIC” is a “MMIC” that provides amplitude and phase control for transmission of signals. 5. 2,7 GHz should be used as the lowest operating frequency (fGHz) in the formula in item (c) for transmit/receive or transmit modules that have a rated operation range extending downward to 2,7 GHz and below [d ≤15 cm * GHz * N/2,7 GHz]. 6. Item IX.A3.019 applies to “transmit/receive modules” or “transmit modules” with or without a heat sink. The value of d in item 11.c. does not include any portion of the “transmit/receive module” or “transmit module” that functions as a heat sink. 7. “Transmit/receive modules”, “transmit modules”, “transmit/receive MMICs” or “transmit MMICs” may or may not have N integrated radiating antenna elements where N is the number of transmit or transmit/receive channels. | 3A001.b. |
| IX.A3.020 | Surface acoustic wave and surface skimming (shallow bulk) acoustic devices with any of the following: (a) A carrier frequency exceeding 6 GHz; (b) A carrier frequency exceeding 1 GHz, but not exceeding 6 GHz and having any of the following: 1. A “frequency side-lobe rejection” exceeding 65 dB; 2. A product of the maximum delay time and the bandwidth (time in μs and bandwidth in MHz) of more than 100; 3. A bandwidth of greater than 250 MHz; or 4. A dispersive delay of more than 10 μs; or (c) A carrier frequency of 1 GHz or less and having any of the following: 1. A product of the maximum delay time and the bandwidth (time in μs and bandwidth in MHz) of more than 100; 2. A dispersive delay of more than 10 μs; or 3. A “frequency side-lobe rejection” exceeding 65 dB and a bandwidth greater than 100 MHz; | 3A001.c. |
| IX.A3.021 | Bulk (volume) acoustic wave which permit the direct processing of signals at frequencies exceeding 6 GHz; | 3A001.c. |
| IX.A3.022 | Acoustic-optic “signal processing” devices employing interaction between acoustic waves (bulk wave or surface wave) and light waves which permit the direct processing of signals or images, including spectral analysis, correlation or convolution; | 3A001.c. |
| IX.A3.023 | Electronic devices and circuits containing components, manufactured from “superconductive” materials, specially designed for operation at temperatures below the “critical temperature” of at least one of the “superconductive” constituents and having any of the following: (a) Current switching for digital circuits using “superconductive” gates with a product of delay time per gate (in seconds) and power dissipation per gate (in watts) of less than 10– 14 J; or (b) Frequency selection at all frequencies using resonant circuits with Q-values exceeding 10 000 ; | 3A001.d. |
| IX.A3.024 | High-energy cells, as follows: (a) “Primary cells” having an “energy density” exceeding 550 Wh/kg at 20 °C; (b) “Secondary cells” having an “energy density” exceeding 350 Wh/kg at 20 °C; Technical notes: 1. For the purposes of high-energy devices, “energy density” (Wh/kg) is calculated from the nominal voltage multiplied by the nominal capacity in ampere-hours (Ah) divided by the mass in kilograms. If the nominal capacity is not stated, energy density is calculated from the nominal voltage squared, then multiplied by the discharge duration in hours divided by the discharge load in Ohms and the mass in kilograms. 2. For the purposes of high-energy devices, a “cell” is defined as an electrochemical device, which has positive and negative electrodes and an electrolyte, and is a source of electrical energy. It is the basic building block of a battery. 3. For the purposes of high-energy devices, a “primary cell” is a “cell” that is not designed to be charged by any other source. 4. For the purposes of high-energy devices, a “secondary cell” is a “cell” that is designed to be charged by an external electrical source. Note: High-energy devices do not apply to batteries, including single-cell batteries. | 3A001.e. |
| IX.A3.025 | High-energy storage capacitors, as follows: (a) Capacitors with a repetition rate of less than 10 Hz (single shot capacitors) and having all of the following: 1. A voltage rating equal to or more than 5 kV; 2. An energy density equal to or more than 250 J/kg; and 3. A total energy equal to or more than 25 kJ; (b) Capacitors with a repetition rate of 10 Hz or more (repetition rated capacitors) and having all of the following: 1. A voltage rating equal to or more than 5 kV; 2. An energy density equal to or more than 50 J/kg; 3. A total energy equal to or more than 100 J; and 4. A charge/discharge cycle life equal to or more than 10 000 ; | 3A001.e. |
| IX.A3.026 | “Superconductive” electromagnets and solenoids, specially designed to be fully charged or discharged in less than one second and having all of the following: Note: The item above does not apply to “superconductive” electromagnets or solenoids specially designed for Magnetic Resonance Imaging (MRI) medical equipment. (a) Energy delivered during the discharge exceeding 10 kJ in the first second; (b) Inner diameter of the current carrying windings of more than 250 mm; and (c) Rated for a magnetic induction of more than 8 T or “overall current density” in the winding of more than 300 A/mm2; | 3A001.e. |
| IX.A3.027 | Solar cells, cell-interconnect-coverglass (CIC) assemblies, solar panels, and solar arrays, which are “space-qualified”, having a minimum average efficiency exceeding 20 % at an operating temperature of 301 K (28 °C) under simulated “AM0” illumination with an irradiance of 1 367 watts per square metre (W/m2); Technical note: “AM0”, or “Air Mass Zero”, refers to the spectral irradiance of sunlight in the Earth's outer atmosphere when the distance between the Earth and the sun is one astronomical unit (AU). | 3A001.e. |
| IX.A3.028 | Rotary input type absolute position encoders having an “accuracy” equal to or less (better) than 1,0 second of arc and specially designed encoder rings, discs or scales therefor; | 3A001.f. |
| IX.A3.029 | Solid-state pulsed power switching thyristor devices and “thyristor modules”, using either electrically, optically or electron radiation controlled switch methods and having any of the following: 1. A maximum turn-on current rate of rise (di/dt) greater than 30 000 A/μs and off-state voltage greater than 1 100 V; or 2. A maximum turn-on current rate of rise (di/dt) greater than 2 000 A/μs and having all of the following: a. An off-state peak voltage equal to or greater than 3 000 V; and b. A peak (surge) current equal to or greater than 3 000 A; Notes: 1. Item (g) above includes: — Silicon Controlled Rectifiers (SCRs); — Electrical Triggering Thyristors (ETTs); — Light Triggering Thyristors (LTTs); — Integrated Gate Commutated Thyristors (IGCTs); — Gate Turn-off Thyristors (GTOs); — MOS Controlled Thyristors (MCTs); — Solidtrons. 2. Item (g) above does not apply to thyristor devices and “thyristor modules” incorporated into equipment designed for civil railway or “civil aircraft” applications. Technical note: For the purposes of item (g) above, a “thyristor module” contains one or more thyristor devices. | 3A001.g. |
| IX.A3.030 | Solid-state power semiconductor switches, diodes or “modules”, having all of the following: 1. Rated for a maximum operating junction temperature greater than 488 K (215 °C); 2. Repetitive peak off-state voltage (blocking voltage) exceeding 300 V; and 3. Continuous current greater than 1 A. Note: Repetitive peak off-state voltage in the item above includes drain to source voltage, collector to emitter voltage, repetitive peak reverse voltage and peak repetitive off-state blocking voltage. | 3A001.h. |
| IX.A3.031 | Recording equipment and oscilloscopes, as follows 1. Digital data recorders having all of the following: a. A sustained “continuous throughput” of more than 6,4 Gbit/s to disk or solid-state drive memory; and b. A processor that performs analysis of radio frequency signal data while it is being recorded; Technical notes: 1. For recorders with a parallel bus architecture, the “continuous throughput” rate is the highest word rate multiplied by the number of bits in a word. 2. “Continuous throughput” is the fastest data rate the instrument can record to disk or solid-state drive memory without the loss of any information while sustaining the input digital data rate or digitizer conversion rate. 2. Real-time oscilloscopes having a vertical root-mean-square (rms) noise voltage of less than 2 % of full-scale at the vertical scale setting that provides the lowest noise value for any input 3 dB bandwidth of 60 GHz or greater per channel; | 3A002.a. |
| IX.A3.032 | “Signal analysers”, as follows: 1. “Signal analysers” having a 3 dB resolution bandwidth (RBW) exceeding 10 MHz anywhere within the frequency range exceeding 31,8 GHz but not exceeding 37 GHz; 2. “Signal analysers” having Displayed Average Noise Level (DANL) less (better) than - 150 dBm/Hz anywhere within the frequency range exceeding 43,5 GHz but not exceeding 90 GHz; 3. “Signal analysers” having a frequency exceeding 90 GHz; 4. “Signal analysers” having all of the following: a. “Real-time bandwidth” exceeding 170 MHz; and b. Having any of the following: 1. 100 % probability of discovery, with less than a 3 dB reduction from full amplitude due to gaps or windowing effects, of signals having a duration of 15 μs or less; or 2. A “frequency mask trigger” function with 100 % probability of trigger (capture) for signals having a duration of 15 μs or less; Technical notes: 1. Probability of discovery in item 1. above is also referred to as probability of intercept or probability of capture. 2. For the purposes of item 1. above, the duration for 100 % probability of discovery is equivalent to the minimum signal duration necessary for the specified level measurement uncertainty. Note: The category above does not apply to those “signal analysers” using only constant percentage bandwidth filters (also known as octave or fractional octave filters). | 3A002.c. |
| IX.A3.033 | Signal generators having any of the following: 1. Specified to generate pulse-modulated signals having all of the following, anywhere within the frequency range exceeding 31,8 GHz but not exceeding 37 GHz: a. “Pulse duration” of less than 25 ns; and b. On/off ratio equal to or exceeding 65 dB; 2. An output power exceeding 100 mW (20 dBm) anywhere within the frequency range exceeding 43,5 GHz but not exceeding 90 GHz; 3. A “frequency switching time” as specified by any of the following: a. Less than 100 μs for any frequency change exceeding 2,2 GHz within the frequency range exceeding 4,8 GHz but not exceeding 31,8 GHz b. Less than 500 μs for any frequency change exceeding 550 MHz within the frequency range exceeding 31,8 GHz but not exceeding 37 GHz; or c. Less than 100 μs for any frequency change exceeding 2,2 GHz within the frequency range exceeding 37 GHz but not exceeding 90 GHz; | 3A002.d. |
| IX.A3.034 | Network analysers having any of the following: 1. An output power exceeding 31,62 mW (15 dBm) anywhere within the operating frequency range exceeding 43,5 GHz but not exceeding 90 GHz; 2. An output power exceeding 1 mW (0 dBm) anywhere within the operating frequency range exceeding 90 GHz but not exceeding 110 GHz; 3. “Non-linear vector measurement functionality” at frequencies exceeding 50 GHz but not exceeding 110 GHz; or 4. A maximum operating frequency exceeding 110 GHz; Technical note: “Non-linear vector measurement functionality” is an instrument's ability to analyse the test results of devices driven into the large-signal domain or the non-linear distortion range. | 3A002.e. |
| IX.A3.035 | Microwave test receivers having all of the following; 1. A maximum operating frequency exceeding 110 GHz; and 2. Being capable of measuring amplitude and phase simultaneously; | 3A002.f. |
| IX.A3.036 | Atomic frequency standards being any of the following: 1. “Space-qualified”; 2. Non-rubidium and having a long-term stability less (better) than 1 × 10– 11/month; or 3. Non-“space-qualified” and having all of the following: a. Being a rubidium standard; b. Long-term stability less (better) than 1 × 10– 11/month; and c. Total power consumption of less than 1 Watt. | 3A002.f. |
| IX.A3.037 | Equipment for the manufacturing of semiconductor devices or materials, as follows and specially designed components and accessories therefor: (a) Equipment designed for ion implantation and having any of the following: 1. Being designed and optimized to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for hydrogen, deuterium or helium implant; 2. Direct write capability; 3. A beam energy of 65 keV or more and a beam current of 45 mA or more for high-energy oxygen implant into a heated semiconductor material “substrate”; or 4. Being designed and optimized to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for silicon implant into a semiconductor material “substrate” heated to 600 °C or greater; (b) Lithography equipment as follows and imprint lithography equipment capable of producing features of 45 nm or less: 1. Align and expose step and repeat (direct step on wafer) or step and scan (scanner) equipment for wafer processing using photo-optical or X-ray methods and having any of the following: a. A light source wavelength shorter than 193 nm; or b. Capable of producing a pattern with a “Minimum Resolvable Feature size” (MRF) of 45 nm or less; Technical note: The ‘Minimum Resolvable Feature size’ (MRF) is calculated by the following formula: Image omitted; see official source where the K factor = 0,35 (c) Equipment specially designed for mask using deflected focused electron beam, ion beam or “laser” beam; | 3B001.b. 3B001.f. 3B001.f. |
| IX.A3.038 | Equipment designed for device processing using direct writing methods; Masks and reticles, designed for integrated circuits. | 3B001.g. |
| IX.A3.038 | Test equipment specially designed for testing finished or unfinished semiconductor and microwave devices as follows and specially designed components and accessories therefor: (a) For testing S-parameters of transistor devices at frequencies exceeding 31,8 GHz; (b) For testing microwave integrated circuits specified above. | 3B002 |
| IX.A3.039 | Hetero-epitaxial materials consisting of a “substrate” having stacked epitaxially grown multiple layers with any of the following: (a) Silicon (Si); (b) Germanium (Ge); (c) Silicon Carbide (SiC); or (d) “III/V compounds” of gallium or indium. Note: This item does not apply to a “substrate” having one or more P-type epitaxial layers of GaN, InGaN, AlGaN, InAlN, InAlGaN, GaP, GaAs, AlGaAs, InP, InGaP, AlInP or InGaAlP, independent of the sequence of the elements, except if the P-type epitaxial layer is between N-type layers. | 3C001 |
| IX.A3.040 | Resist materials as follows and “substrates” coated with the following resists: (a) Resists designed for semiconductor lithography as follows: 1. Positive resists adjusted (optimized) for use at wavelengths less than 245 nm but equal to or greater than 15 nm; 2. Resists adjusted (optimized) for use at wavelengths less than 15 nm but greater than 1 nm; (b) All resists designed for use with electron beams or ion beams, with a sensitivity of 0,01 μcoulomb/mm2 or better; (c) All resists optimized for surface imaging technologies; (d) All resists designed or optimized for use with imprint lithography equipment capable of producing features of 45 nm or less that use either a thermal or photo-curable process. | 3C002 |
| IX.A3.041 | Organo-inorganic compounds: (a) Organo-metallic compounds of aluminium, gallium or indium, having a purity (metal basis) better than 99,999 %; (b) Organo-arsenic, organo-antimony and organo-phosphorus compounds, having a purity (inorganic element basis) better than 99,999 %. | 3C003 |
| IX.A3.042 | Hydrides of phosphorus, arsenic or antimony, having a purity better than 99,999 %, even diluted in inert gases or hydrogen. Note: The item above does not apply to hydrides containing 20 % molar or more of inert gases or hydrogen. | 3C004 |
| IX.A3.043 | Silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN) or aluminium gallium nitride (AlGaN) semiconductor “substrates”, or ingots, boules or other preforms of those materials, having resistivities greater than 10 000 ohm-cm at 20 °C. | 3C005 |
| IX.A3.044 | “Substrates” specified in item 5 above with at least one epitaxial layer of silicon carbide, gallium nitride, aluminium nitride or aluminium gallium nitride. | 3C006 |
IX.A6. SENSORS AND LASERS
| No | Description | Related item from Annex I to Regulation (EC) No 428/2009 |
|---|---|---|
| IX.A6.001 | Optical sensors or equipment and components therefor, as follows: (a) Special support components for optical sensors, as follows: 1. “Space-qualified” cryocoolers; | 6A002.d. |
| IX.A6.002 | Non-“space-qualified” cryocoolers having a cooling source temperature below 218 K (– 55 °C), as follows: (a) Closed cycle type with a specified Mean-Time-To-Failure (MTTF) or Mean-Time-Between-Failures (MTBF), exceeding 2 500 hours; (b) Joule-Thomson (JT) self-regulating minicoolers having bore (outside) diameters of less than 8 mm; | 6A002.d. |
| IX.A6.003 | Optical sensing fibres specially fabricated either compositionally or structurally, or modified by coating, to be acoustically, thermally, inertially, electromagnetically or nuclear radiation sensitive. | 6A002.d. |
| IX.A6.004 | Cameras, systems or equipment, and components therefor, as follows: (a) Instrumentation cameras and specially designed components therefor, as follows: Note: Instrumentation cameras, specified above, with modular structures should be evaluated by their maximum capability, using plug-ins available according to the camera manufacturer's specifications. | 6A003 |
| IX.A6.005 | High-speed cinema recording cameras using any film format from 8 mm to 16 mm inclusive, in which the film is continuously advanced throughout the recording period, and that are capable of recording at framing rates exceeding 13 150 frames/s; Note: The item above does not apply to cinema recording cameras designed for civil purposes. 2. Mechanical high-speed cameras, in which the film does not move, capable of recording at rates exceeding 1 000 000 frames/s for the full framing height of 35 mm film, or at proportionately higher rates for lesser frame heights, or at proportionately lower rates for greater frame heights; 3. Mechanical or electronic streak cameras as follows: a. Mechanical streak cameras having writing speeds exceeding 10 mm/μs; b. Electronic streak cameras having temporal resolution better than 50 ns; 4. Electronic framing cameras having a speed exceeding 1 000 000 frames/s; 5. Electronic cameras having all of the following: a. An electronic shutter speed (gating capability) of less than 1 μs per full frame; and b. A read-out time allowing a framing rate of more than 125 full frames per second; 6. Plug-ins having all of the following characteristics: a. Specially designed for instrumentation cameras which have modular structures and which are specified in this item; and b. Enabling these cameras to meet the characteristics specified above, according to the manufacturer's specifications; | 6A003 |
| IX.A6.006 | Imaging cameras, as follows: Note: The item above does not apply to television or video cameras, specially designed for television broadcasting. 1. Video cameras incorporating solid-state sensors, having a peak response in the wavelength range exceeding 10 nm, but not exceeding 30 000 nm and having all of the following: a. Having any of the following: 1. More than 4 × 106“active pixels” per solid-state array for monochrome (black and white) cameras; 2. More than 4 × 106“active pixels” per solid-state array for colour cameras incorporating three solid-state arrays; or 3. More than 12 × 106“active pixels” for solid-state array colour cameras incorporating one solid-state array; and b. Having any of the following: 1. Optical mirrors specified below; 2. Optical control equipment specified below; or 3. The capability for annotating internally generated “camera tracking data”; Technical notes: 1. For the purposes of this entry, digital video cameras should be evaluated by the maximum number of “active pixels” used for capturing moving images. 2. For the purposes of this entry, “camera tracking data” is the information necessary to define camera line of sight orientation with respect to the Earth. This includes: (a) the horizontal angle the camera line of sight makes with respect to the Earth's magnetic field direction; and (b) the vertical angle between the camera line of sight and the Earth's horizon. | 6A003 |
| IX.A6.007 | Scanning cameras and scanning camera systems; a. A peak response in the wavelength range exceeding 10 nm, but not exceeding 30 000 nm; b. Linear detector arrays with more than 8 192 elements per array; and c. Mechanical scanning in one direction; Note: The item above does not apply to scanning cameras and scanning camera systems, specially designed for any of the following: (a) Industrial or civilian photocopiers; (b) Image scanners specially designed for civil, stationary, close proximity scanning applications (e.g., reproduction of images or print contained in documents, artwork or photographs); or (c) Medical equipment. | 6A003 |
| IX.A6.008 | Imaging cameras incorporating image intensifier tubes having any of the following: a. Having all of the following: 1. A peak response in the wavelength range exceeding 400 nm but not exceeding 1 050 nm; 2. Electron image amplification using any of the following: a. A microchannel plate with a hole pitch (centre-to-centre spacing) of 12 μm or less; or b. An electron sensing device with a non-binned pixel pitch of 500 μm or less, specially designed or modified to achieve “charge multiplication” other than by a microchannel plate; and 3. Any of the following photocathodes: a. Multialkali photocathodes (e.g., S-20 and S-25) having a luminous sensitivity exceeding 350 μA/lm; b. GaAs or GaInAs photocathodes; or c. Other “III/V compound” semiconductor photocathodes having a maximum “radiant sensitivity” exceeding 10 mA/W; or b. Having all of the following: 1. A peak response in the wavelength range exceeding 1 050 nm but not exceeding 1 800 nm; 2. Electron image amplification using any of the following: a. A microchannel plate with a hole pitch (centre-to-centre spacing) of 12 μm or less; or b. An electron sensing device with a non-binned pixel pitch of 500 μm or less, specially designed or modified to achieve “charge multiplication” other than by a microchannel plate; and 3. “III/V compound” semiconductor (e.g., GaAs or GaInAs) photocathodes and transferred electron photocathodes, having a maximum “radiant sensitivity” exceeding 15 mA/W; | 6A003 |
| IX.A6.009 | Imaging cameras incorporating “focal plane arrays” having any of the following: a. Incorporating non-“space-qualified”“focal plane arrays” having any of the following: 1. Having all of the following: a. Individual elements with a peak response within the wavelength range exceeding 900 nm but not exceeding 1 050 nm; and b. Any of the following: 1. A response “time constant” of less than 0,5 ns; or 2. Specially designed or modified to achieve “charge multiplication” and having a maximum “radiant sensitivity” exceeding 10 mA/W; 2. Having all of the following: a. Individual elements with a peak response in the wavelength range exceeding 1 050 nm but not exceeding 1 200 nm; and b. Any of the following: 1. A response “time constant” of 95 ns or less; or 2. Specially designed or modified to achieve “charge multiplication” and having a maximum “radiant sensitivity” exceeding 10 mA/W; or 3. Being non-“space-qualified” non-linear (two-dimensional) “focal plane arrays” having individual elements with a peak response in the wavelength range exceeding 1 200 nm but not exceeding 30 000 nm; 4. Being non-“space-qualified” linear (one-dimensional) “focal plane arrays” having all of the following: a. Individual elements with a peak response in the wavelength range exceeding 1 200 nm but not exceeding 3 000 nm; and b. Any of the following: 1. A ratio of “scan direction” dimension of the detector element to the “cross-scan direction” dimension of the detector element of less than 3,8; or 2. Signal processing in the detector elements; or 5. Being non-“space-qualified” linear (one-dimensional) “focal plane arrays” having individual elements with a peak response in the wavelength range exceeding 3 000 nm but not exceeding 30 000 nm; b. Incorporating non-“space-qualified” non-linear (two-dimensional) infrared “focal plane arrays” based on “microbolometer” material having individual elements with an unfiltered response in the wavelength range equal to or exceeding 8 000 nm but not exceeding 14 000 nm; or c. Incorporating non-“space-qualified”“focal plane arrays” having all of the following: 1. Individual detector elements with a peak response in the wavelength range exceeding 400 nm but not exceeding 900 nm; 2. Specially designed or modified to achieve “charge multiplication” and having a maximum “radiant sensitivity” exceeding 10 mA/W for wavelengths exceeding 760 nm; and 3. Greater than 32 elements. Notes: 1. Imaging cameras specified in item 4 above include “focal plane arrays” combined with sufficient “signal processing” electronics, beyond the read-out integrated circuit, to enable as a minimum the output of an analogue or digital signal once power is supplied. 2. Item 4.a. does not apply to imaging cameras incorporating linear “focal plane arrays” with 12 elements or fewer, not employing time-delay-and-integration within the element and designed for any of the following: (a) Industrial or civilian intrusion alarm, traffic or industrial movement control or counting systems; (b) Industrial equipment used for inspection or monitoring of heat flows in buildings, equipment or industrial processes; (c) Industrial equipment used for inspection, sorting or analysis of the properties of materials; (d) Equipment specially designed for laboratory use; or (e) Medical equipment. 3. Item 4.b. does not apply to imaging cameras having any of the following: (a) A maximum frame rate equal to or less than 9 Hz; (b) Having all of the following: 1. Having a minimum horizontal or vertical “Instantaneous Field of View (IFOV)” of at least 10 mrad (milliradians); 2. Incorporating a fixed focal-length lens that is not designed to be removed; 3. Not incorporating a “direct view” display; and Technical note: “Direct view” refers to an imaging camera operating in the infrared spectrum that presents a visual image to a human observer using a near-to-eye microdisplay incorporating any light-security mechanism. 4. Having any of the following: a. No facility to obtain a viewable image of the detected field of view; or b. The camera is designed for a single kind of application and designed not to be user modified; or Technical note: “Instantaneous Field of View (IFOV)” specified in note 3.b. is the lesser figure of the “Horizontal IFOV” or the “Vertical IFOV”. “Horizontal IFOV” = horizontal Field of View (FOV)/number of horizontal detector elements. “Vertical IFOV” = vertical Field of View (FOV)/number of vertical detector elements. (c) The camera is specially designed for installation into a civilian passenger land vehicle and having all of the following: 1. The placement and configuration of the camera within the vehicle are solely to assist the driver in the safe operation of the vehicle. | 6A003 |
| IX.A6.010 | Optical mirrors (reflectors), as follows: 1. “Deformable mirrors” having an active optical aperture greater than 10 mm and having any of the following, and specially designed components therefor: a. Having all the following: 1. A mechanical resonant frequency of 750 Hz or more; and 2. More than 200 actuators; or b. A Laser Induced Damage Threshold (LIDT) being any of the following: 1. Greater than 1 kW/cm2 using a “CW laser”; or 2. Greater than 2 J/cm2 using 20 ns “laser” pulses at 20 Hz repetition rate; 2. Lightweight monolithic mirrors having an average “equivalent density” of less than 30 kg/m2 and a total mass exceeding 10 kg; 3. Lightweight “composite” or foam mirror structures having an average “equivalent density” of less than 30 kg/m2 and a total mass exceeding 2 kg; Note: Items 2 and 3 above do not apply to mirrors specially designed to direct solar radiation for terrestrial heliostat installations. | 6A004.a. |
| IX.A6.011 | Mirrors specially designed for beam steering mirror stages with a flatness of λ/10 or better (λ is equal to 633 nm) and having any of the following: a. Diameter or major axis length greater than or equal to 100 mm; or b. Having all of the following: 1. Diameter or major axis length greater than 50 mm but less than 100 mm; and 2. A Laser Induced Damage Threshold (LIDT) being any of the following: a. Greater than 10 kW/cm2 using a “CW laser”; or b. Greater than 20 J/cm2 using 20 ns “laser” pulses at 20 Hz repetition rate; | 6A004.b. |
| IX.A6.012 | Optical components made from zinc selenide (ZnSe) or zinc sulphide (ZnS) with transmission in the wavelength range exceeding 3 000 nm but not exceeding 25 000 nm and having any of the following: 1. Exceeding 100 cm3 in volume; or 2. Exceeding 80 mm in diameter or length of major axis and 20 mm in thickness (depth); (c) “Space-qualified” components for optical systems, as follows: 1. Components lightweighted to less than 20 % “equivalent density” compared with a solid blank of the same aperture and thickness; 2. Raw substrates, processed substrates having surface coatings (single-layer or multi-layer, metallic or dielectric, conducting, semiconducting or insulating) or having protective films; 3. Segments or assemblies of mirrors designed to be assembled in space into an optical system with a collecting aperture equivalent to or larger than a single optic 1 m in diameter; 4. Components manufactured from “composite” materials having a coefficient of linear thermal expansion equal to or less than 5 × 10– 6 in any coordinate direction. | 6A004.c. |
| IX.A6.013 | Non-“tunable” continuous-wave “(CW) lasers” having any of the following: 1. Output wavelength less than 150 nm and output power exceeding 1 W; 2. Output wavelength of 150 nm or more but not exceeding 510 nm and output power exceeding 30 W; Note: Item 2 above does not apply to Argon “lasers” having an output power equal to or less than 50 W. 3. Output wavelength exceeding 510 nm but not exceeding 540 nm and any of the following: a. Single transverse mode output and output power exceeding 50 W; or b. Multiple transverse mode output and output power exceeding 150 W; 4. Output wavelength exceeding 540 nm but not exceeding 800 nm and output power exceeding 30 W; 5. Output wavelength exceeding 800 nm but not exceeding 975 nm and any of the following: a. Single transverse mode output and output power exceeding 50 W; or b. Multiple transverse mode output and output power exceeding 80 W; 6. Output wavelength exceeding 975 nm but not exceeding 1 150 nm and any of the following: a. Single transverse mode and output power exceeding 500 W; or b. Multiple transverse mode output and any of the following: 1. “Wall-plug efficiency” exceeding 18 % and output power exceeding 500 W; or 2. Output power exceeding 2 kW; Notes: 1. Item b. above does not apply to multiple transverse mode, industrial “lasers” with output power exceeding 2 kW and not exceeding 6 kW with a total mass greater than 1 200 kg. For the purposes of this note, total mass includes all components required to operate the “laser”, e.g., “laser”, power supply, heat exchanger, but excludes external optics for beam conditioning and/or delivery. 2. Item b. above does not apply to multiple transverse mode, industrial “lasers” having any of the following: (a) Output power exceeding 500 W but not exceeding 1 kW and having all of the following: 1. Beam Parameter Product (BPP) exceeding 0,7 mm · mrad; and 2. “Brightness” not exceeding 1 024 W/(mm · mrad)2; (b) Output power exceeding 1 kW but not exceeding 1,6 kW and having a BPP exceeding 1,25 mm · mrad; (c) Output power exceeding 1,6 kW but not exceeding 2,5 kW and having a BPP exceeding 1,7 mm · mrad; (d) Output power exceeding 2,5 kW but not exceeding 3,3 kW and having a BPP exceeding 2,5 mm · mrad; (e) Output power exceeding 3,3 kW but not exceeding 4 kW and having a BPP exceeding 3,5 mm · mrad; (f) Output power exceeding 4 kW but not exceeding 5 kW and having a BPP exceeding 5 mm · mrad; (g) Output power exceeding 5 kW but not exceeding 6 kW and having a BPP exceeding 7,2 mm · mrad; (h) Output power exceeding 6 kW but not exceeding 8 kW and having a BPP exceeding 12 mm · mrad; or (i) Output power exceeding 8 kW but not exceeding 10 kW and having a BPP exceeding 24 mm · mrad; Technical note: For the purposes of note 2.a., “brightness” is defined as the output power of the “laser” divided by the squared Beam Parameter Product (BPP), i.e., (output power)/BPP2. | 6A005.a.1. 6A005.a.2.. 6A005.a.3 6A005.a.4. 6A005.a.5. 6A005.a.6. |
| IX.A6.014 | “Tunable”“lasers” having any of the following: 1. Output wavelength less than 600 nm and any of the following: a. Output energy exceeding 50 mJ per pulse and “peak power” exceeding 1 W; or b. Average or CW output power exceeding 1 W; Note: Item 1. above does not apply to dye “lasers” or other liquid “lasers”, having a multimode output and a wavelength of 150 nm or more but not exceeding 600 nm and all of the following: 1. Output energy less than 1,5 J per pulse or a “peak power” less than 20 W; and 2. Average or CW output power less than 20 W. 2. Output wavelength of 600 nm or more but not exceeding 1 400 nm, and any of the following: a. Output energy exceeding 1 J per pulse and “peak power” exceeding 20 W; or b. Average or CW output power exceeding 20 W; or 3. Output wavelength exceeding 1 400 nm and any of the following: a. Output energy exceeding 50 mJ per pulse and “peak power” exceeding 1 W; or b. Average or CW output power exceeding 1 W; | 6A005.c. |
| IX.A6.015 | Other semiconductor “lasers”, as follows: Notes: 1. Includes semiconductor “lasers” having optical output connectors (e.g., fibre-optic pigtails). 2. The status of semiconductor “lasers” specially designed for other equipment is determined by the status of the other equipment. a. Individual single-transverse mode semiconductor “lasers” having any of the following: 1. Wavelength equal to or less than 1 510 nm and average or CW output power, exceeding 1,5 W; or 2. Wavelength greater than 1 510 nm and average or CW output power, exceeding 500 mW; b. Individual, multiple-transverse mode semiconductor “lasers” having any of the following: 1. Wavelength of less than 1 400 nm and average or CW output power, exceeding 15 W; 2. Wavelength equal to or greater than 1 400 nm and less than 1 900 nm and average or CW output power, exceeding 2,5 W; or 3. Wavelength equal to or greater than 1 900 nm and average or CW output power, exceeding 1 W; c. Individual semiconductor “laser”“bars” having any of the following: 1. Wavelength of less than 1 400 nm and average or CW output power, exceeding 100 W; 2. Wavelength equal to or greater than 1 400 nm and less than 1 900 nm and average or CW output power, exceeding 25 W; or 3. Wavelength equal to or greater than 1 900 nm and average or CW output power, exceeding 10 W; d. Semiconductor “laser”“stacked arrays” (two-dimensional arrays) having any of the following: 1. Wavelength less than 1 400 nm and having any of the following: a. Average or CW total output power less than 3 kW and having average or CW output “power density” greater than 500 W/cm2; b. Average or CW total output power equal to or exceeding 3 kW but less than or equal to 5 kW, and having average or CW output “power density” greater than 350W/cm2; c. Average or CW total output power exceeding 5 kW; d. Peak pulsed “power density” exceeding 2 500 W/cm2; or Note: Item d. does not apply to epitaxially fabricated monolithic devices. e. Spatially coherent average or CW total output power, greater than 150 W; 2. Wavelength greater than or equal to 1 400 nm but less than 1 900 nm, and having any of the following: a. Average or CW total output power less than 250 W and average or CW output “power density” greater than 150 W/cm2; b. Average or CW total output power equal to or exceeding 250 W but less than or equal to 500 W, and having average or CW output “power density” greater than 50W/cm2; c. Average or CW total output power exceeding 500 W; d. Peak pulsed “power density” exceeding 500 W/cm2; or Note: Item d. does not apply to epitaxially fabricated monolithic devices. e. Spatially coherent average or CW total output power, exceeding 15 W; 3. Wavelength greater than or equal to 1 900 nm and having any of the following: a. Average or CW output “power density” greater than 50 W/cm2; b. Average or CW output power greater than 10 W; or c. Spatially coherent average or CW total output power, exceeding 1,5W; or 4. At least one “laser”“bar” specified above; Technical note: For the purposes of this category “power density” means the total “laser” output power divided by the emitter surface area of the “stacked array”. | 6A005.d.1 |
| IX.A6.016 | “Chemical lasers”, as follows: a. Hydrogen Fluoride (HF) “lasers”; b. Deuterium Fluoride (DF) “lasers”; c. “Transfer lasers”, as follows: 1. Oxygen Iodine (O2-I) “lasers”; 2. Deuterium Fluoride-Carbon dioxide (DF-CO2) “lasers”; 3. “Non-repetitive pulsed” Nd: glass “lasers” having any of the following: a. “Pulse duration” not exceeding 1 μs and output energy exceeding 50 J per pulse; or b. “Pulse duration” exceeding 1 μs and output energy exceeding 100 J per pulse; | 6A005.d.5 |
| IX.A6.017 | Components, as follows: 1. Mirrors cooled either by “active cooling” or by heat pipe cooling; Technical note: “Active cooling” is a cooling technique for optical components using flowing fluids within the subsurface (nominally less than 1 mm below the optical surface) of the optical component to remove heat from the optic. 2. Optical mirrors or transmissive or partially transmissive optical or electro-optical components, other than fused tapered fibre combiners and Multi-Layer Dielectric gratings (MLDs), specially designed for use with specified “lasers”; 3. Fibre “laser” components: a. Multimode to multimode fused tapered fibre combiners having all of the following: 1. An insertion loss better (less) than or equal to 0,3 dB maintained at a rated total average or CW output power (excluding output power transmitted through the single mode core if present) exceeding 1 000 W; and 2. Number of input fibres equal to or greater than 3; b. Single-mode to multimode fused tapered fibre combiners having all of the following: 1. An insertion loss better (less) than 0,5 dB maintained at a rated total average or CW output power exceeding 4 600 W; 2. Number of input fibres equal to or greater than 3; and 3. Having any of the following: a. A Beam Parameter Product (BPP) measured at the output not exceeding 1,5 mm mrad for a number of input fibres less than or equal to 5; or b. A BPP measured at the output not exceeding 2,5 mm mrad for a number of input fibres greater than 5; c. MLDs having all of the following: 1. Designed for spectral or coherent beam combination of 5 or more fibre “lasers”; and 2. CW “Laser” Induced Damage Threshold (LIDT) greater than or equal to 10 kW/cm2. | 6A005.e. |
| IX.A6.018 | Gravity meters (gravimeters) and gravity gradiometers, as follows: (a) Gravity meters designed or modified for ground use and having a static “accuracy” of less (better) than 10 μGal; Note: Item (a) does not apply to ground gravity meters of the quartz element (Worden) type. (b) Gravity meters designed for mobile platforms and having all of the following: 1. A static “accuracy” of less (better) than 0,7 mGal; and 2. An in-service (operational) “accuracy” of less (better) than 0,7 mGal having a “time-to-steady-state registration” of less than 2 minutes under any combination of attendant corrective compensations and motional influences; Technical note: For the purposes of item (b), “time-to-steady-state registration” (also referred to as the gravimeter's response time) is the time over which the disturbing effects of platform-induced accelerations (high-frequency noise) are reduced. (c) Gravity gradiometers. | 6A007 |
| IX.A6.019 | 1. Radar systems, equipment and assemblies, having any of the following, and specially designed components therefor: Note: This section does not apply to: — Secondary Surveillance Radar (SSR); — Civil Automotive Radar; — Displays or monitors used for Air Traffic Control (ATC); — Meteorological (weather) Radar; — Precision Approach Radar (PAR) equipment conforming to International Civil Aviation Organization (ICAO) standards and employing electronically steerable linear (one-dimensional) arrays or mechanically positioned passive antennae. (a) Operating at frequencies from 40 GHz to 230 GHz and having any of the following: 1. An average output power exceeding 100 mW; or 2. Locating “accuracy” of 1 m or less (better) in range and 0,2 degree or less (better) in azimuth; (b) A tunable bandwidth exceeding ± 6,25 % of the “centre operating frequency”; Technical note: The “centre operating frequency” equals one half of the sum of the highest plus the lowest specified operating frequencies. (c) Capable of operating simultaneously on more than two carrier frequencies; (d) Capable of operating in synthetic aperture radar (SAR), inverse synthetic aperture radar (ISAR) or side-looking airborne radar (SLAR) mode; (e) Incorporating electronically steerable array antennae; (f) Capable of height-finding non-cooperative targets; (g) Specially designed for airborne (balloon or airframe mounted) operation and having Doppler “signal processing” for the detection of moving targets; (h) Employing processing of radar signals and using any of the following: 1. “Radar spread spectrum” techniques; or 2. “Radar frequency agility” techniques; (i) Providing ground-based operation with a maximum “instrumented range” exceeding 185 km; Note: Item (i) above does not apply to: (a) Fishing ground surveillance radar; (b) Ground radar equipment specially designed for en-route air traffic control and having all of the following: 1. A maximum “instrumented range” of 500 km or less; 2. Configured so that radar target data can be transmitted only one way from the radar site to one or more civil ATC centres; 3. Contains no provisions for remote control of the radar scan rate from the en-route ATC centre; and 4. Permanently installed. (c) Weather balloon tracking radars. (j) Being “laser” radar or Light Detection and Ranging (LIDAR) equipment and having any of the following: 1. “Space-qualified”; 2. Employing coherent heterodyne or homodyne detection techniques and having an angular resolution of less (better) than 20 μrad (microradians); or 3. Designed for carrying out airborne bathymetric littoral surveys to International Hydrographic Organization (IHO) Order 1a Standard (5th Edition, February 2008) for Hydrographic Surveys or better, and using one or more “lasers” with a wavelength exceeding 400 nm but not exceeding 600 nm; Notes: 1. LIDAR equipment specially designed for surveying is only specified by 3. 2. The item above does not apply to LIDAR equipment specially designed for meteorological observation. 3. Parameters in the IHO Order 1a Standard (5th Edition, February 2008) are summarized as follows: Horizontal Accuracy (95 % confidence level) = 5 m + 5 % of depth. Depth Accuracy for Reduced Depths (95 % confidence level) = ± √(a2+ (b * d)2) where: a = 0,5 m = constant-depth error, i.e., the sum of all constant-depth errors b = 0,013 = factor of depth-dependent error b * d = depth-dependent error, i.e., the sum of all depth-dependent errors d = depth Feature Detection = Cubic features > 2 m in depths up to 40 m; 10 % of depth beyond 40 m. (k) Having “signal processing” subsystems using “pulse compression” and having any of the following: 1. A “pulse compression” ratio exceeding 150; or 2. A compressed pulse width of less than 200 ns; or Note: Item 2. above does not apply to two-dimensional “marine radar” or “vessel traffic service” radar, having all of the following: (a) “Pulse compression” ratio not exceeding 150; (b) Compressed pulse width of greater than 30 ns; (c) Single and rotating mechanically scanned antenna; (d) Peak output power not exceeding 250 W; and (e) Not capable of “frequency hopping”. (l) Having data processing subsystems and having any of the following: 1. “Automatic target tracking” providing, at any antenna rotation, the predicted target position beyond the time of the next antenna beam passage; or Note: The item above does not apply to conflict alert capability in ATC systems, or “marine radar”. 2. Configured to provide superposition and correlation, or fusion, of target data within six seconds from two or more “geographically dispersed” radar sensors to improve the aggregate performance beyond that of any single sensor specified in items (f) or (i). Note: The item above does not apply to systems, equipment and assemblies used for “vessel traffic services”. Technical notes: 1. For the purposes of this section, “marine radar” is a radar that is used to navigate safely at sea, in inland waterways or in near-shore environments. 2. For the purposes of this section, “vessel traffic service” is a vessel traffic monitoring and control service similar to air traffic control for “aircraft”. | 6A008 |
| IX.A6.020 | Optical equipment, as follows: (a) Equipment for measuring absolute reflectance to an “accuracy” of equal to or better than 0,1 % of the reflectance value; (b) Equipment other than optical surface scattering measurement equipment, having an unobscured aperture of more than 10 cm, specially designed for the non-contact optical measurement of a non-planar optical surface figure (profile) to an “accuracy” of 2 nm or less (better) against the required profile. Note: The item above does not apply to microscopes. | 6B004 |
| IX.A6.021 | Equipment to produce, align and calibrate land-based gravity meters with a static “accuracy” of better than 0,1 mGal. | 6B007 |
| IX.A6.022 | Pulse radar cross-section measurement systems having transmit pulse widths of 100 ns or less, and specially designed components therefor. | 6B008 |
| IX.A6.023 | Optical sensor materials, as follows: (a) Elemental tellurium (Te) of purity levels of 99,9995 % or more; (b) Single crystals (including epitaxial wafers) of any of the following: 1. Cadmium zinc telluride (CdZnTe) with zinc content of less than 6 % by “mole fraction”; 2. Cadmium telluride (CdTe) of any purity level; or 3. Mercury cadmium telluride (HgCdTe) of any purity level. Technical note: “Mole fraction” is defined as the ratio of moles of ZnTe to the sum of the moles of CdTe and ZnTe present in the crystal. | 6C002 |
| IX.A6.024 | Optical materials, as follows: (a) Zinc selenide (ZnSe) and zinc sulphide (ZnS) “substrate blanks”, produced by the chemical vapour deposition process and having any of the following: 1. A volume greater than 100 cm3; or 2. A diameter greater than 80 mm and a thickness of 20 mm or more; (b) Electro-optic materials and non-linear optical materials, as follows: 1. Potassium titanyl arsenate (KTA) (CAS 59400-80-5); 2. Silver gallium selenide (AgGaSe2, also known as AGSE) (CAS 12002-67-4); 3. Thallium arsenic selenide (Tl3AsSe3, also known as TAS) (CAS 16142-89-5); 4. Zinc germanium phosphide (ZnGeP2, also known as ZGP, zinc germanium biphosphide or zinc germanium diphosphide); or 5. Gallium selenide (GaSe) (CAS 12024-11-2); | 6C004.a. 6C004.b. |
| IX.A6.025 | “Substrate blanks” of silicon carbide or beryllium beryllium (Be/Be) deposited materials, exceeding 300 mm in diameter or major axis length; | 6C004.d. |
| IX.A6.026 | Glass, including fused silica, phosphate glass, fluorophosphate glass, zirconium fluoride (ZrF4) (CAS 7783-64-4) and hafnium fluoride (HfF4) (CAS 13709-52-9) and having all of the following: 1. A hydroxyl ion (OH–) concentration of less than 5 ppm; 2. Integrated metallic purity levels of less than 1 ppm; and 3. High homogeneity (index of refraction variance) less than 5 × 10– 6; (e) Synthetically produced diamond material with an absorption of less than 10– 5 cm– 1 for wavelengths exceeding 200 nm but not exceeding 14 000 nm. | 6C004.e. |
| IX.A6.027 | “Laser” materials, as follows: (a) Synthetic crystalline “laser” host material in unfinished form as follows: 1. Titanium doped sapphire; (b) Rare-earth-metal doped double-clad fibres; 1. Nominal “laser” wavelength of 975 nm to 1 150 nm and having all of the following: a. Average core diameter equal to or greater than 25 μm; and b. Core “Numerical Aperture” (“NA”) less than 0,065; or Note: The item above does not apply to double-clad fibres having an inner glass cladding diameter exceeding 150 μm and not exceeding 300 μm. 2. Nominal “laser” wavelength exceeding 1 530 nm and having all of the following: a. Average core diameter equal to or greater than 20 μm; and b. Core “NA” less than 0,1. Technical notes: 1. For the purposes of the item above, the core “Numerical Aperture” (“NA”) is measured at the emission wavelengths of the fibre. 2. Item (b) above includes fibres assembled with end caps. | 6C005 |
IX.A7. NAVIGATION AND AVIONICS
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