LegalizeThe Export of Goods (Control) Order 1989
| IL1301 | Equipment and technology for the production of superalloys, the following— | |
|---|---|---|
| a Equipment specially designed for the production of superalloys including vacuum induction furnaces used in the production of superalloy powders | C | |
| except electric arc and induction furnaces, basic oxygen furnaces and remelting equipment using other techniques for the production of carbon steels, low-alloy steels and stainless steels; degassing equipment used for the production of carbon steels, low-alloy steels and stainless steels hot and cold rolling mills, extrusion presses, and swaging and forging machines; decarburizing and annealing and pickling equipment; surface finishing equipment; slitting and cutting equipment. | ||
| b Technology specific to the production of superalloys, regardless of the type of equipment with which it may be intended to use such technology | D | |
| except technology on the equipment specifically excluded from head (a) above, other than melting, remelting and degassing technology specific to the production of superalloys. | ||
| In this entry “superalloys” means nickel-, cobalt-, or iron-base alloys having strengths superior to the AISI 300 series (as of the 1 May 1982) at temperatures over 922 K (649°C) under severe environmental and operating conditions. Excluded are carbon steels, low-alloy steels and stainless steels having strengths inferior to the AISI 300 series (as of 1 May 1982). | ||
| IL1305 | Metal rolling mills,m the following: and specially designed components accessories and controls and specially designed ODMA software therefor— | |
| a Isothermal rolling mills, except those capable of operating only at ambient temperatures | C | |
| In this head an “isothermal rolling mill” means an isothermal rolling mill in which a constant instantaneous temperature profile is maintained in the contact area between the workpiece and the rolls. | ||
| b Other mills specially designed or re-designed for the rolling of metals and alloys with a melting point exceeding 1,900°C | C | |
| IL1312 | Isostatic presses the following: and specially designed dies and moulds (except those used in isostatic presses operating at amient temperatures), components, accressories and controls and specially designed ODMA software therefor— | |
| a Those capable of achieving a maximum working pressure of 138MPa (20,000 psi) or more and possessing a chamber cavity with an inside diameter in excess of 406 mm (16 inches) or | C | |
| b Those having a controlled thermal environment within the closed cavity and possessing a chamber cavity with an inside diameter of 127 mm or more | C | |
| In this entry “isostatic presses” are equipment capable of pressurizing a closed cavity through various media (gas, liquid, solid particles, etc) to create equal pressure in all directions within the cavity upon a workpiece or material. | ||
| IL1352 | Nozzles, dies and extruder barrels specially designed for the processing of the fluorocarbon materials specified in subhead (a)(2) of the entry IL1754 in Group 31 | C |
| IL1353 | Manufacturing and testing equipment for optical fibre, optical cable and other cables, the following: and specially designed components and specially designed ODMA software therefor— | |
| a Equipment specially designed to manufacture cable specified in heads (a) and (d) of entry IL1526 in Group 3F | C | |
| b Equipment specially designed to manufacture optical fibre or optical cable specified in entry IL1526 in Group 3F | C | |
| c Equipment specially designed to manufacture optical preforms specified in entry IL1767 in Group 3I | C | |
| d Optical fibre and preform characterisation equipment using semi-conductor lasers for the testing of optical fibres or optical preforms at operting wavelengths exceeding 850 nm | C | |
| IL1354 | Equipment designed for the manufacture or testing of printed circuit boards, the following: and specially designed components and accessories and specially designed ODMA software therefor— | |
| a Equipment specially designed for removal of resists or printed circuit board materials by dry (plasma) methods | C | |
| b Computer-aided design (CAD) equipment for printed circuit boards, having any of the following functions— | ||
| 1 generation of artwork design with an interactive capability | C | |
| 2 generation of test string lists for multi-layer boards | C | |
| 3 generation of data or programmes for stored-programme controlled printed circuit board drilling equipment | C | |
| 4 generation of data or programmes for stored-programme controlled printed circuit board shaping and profiling equipment or | C | |
| 5 generation of data for control of the sequencing of processes of the equipment for printed circuit board manufacture specified in head (c) below | C | |
| c High-speed automated continuous panel processors for plating capable of delivering more than or equal to 860 A/m² of plate current, (This does not include processors specially designed for, and restricted to, plating tab (edge) connnectors) | C | |
| d Stored-programme controlled inspection equipment for the detection of defects in printed circuit boards using optical pattern comparison or other machine scanning techniques | C | |
| e Stored-programme controlled electrical test equipment for the identification of open and short circuits on bare printed circuit boards, capable of— | ||
| 1 continuity testing (less than or equal to 4 ohm) at a rate of 2,500 or more measurements per second | C | |
| 2 high voltage testing (greater than or equal to 50 volts) at a rate of 10,000 or more measurements per minute | C | |
| f Stored-programme controlled multi-spindle drills and routers having any of the following characteristics— | ||
| 1 absolute positioning accuracy of ±10 micrometres or better | C | |
| 2 minimum time needed for drill bit changes less than or equal to 5 seconds | C | |
| or | ||
| 3 X and Y positioning speeds higher than or equal to 0.125 m/sec for drilling or for routing | C | |
| g Stored-programme controlled cyclic voltametric stripping equipment specially designed for printed circuit board plating bath monitoring and analysis | C | |
| For the purpose of this entry “stored progamme controlled” means controlled using instructions stored in an electronic storage which a processor can execute in order to direct the performance of predetermined functions. | ||
| IL1355 | Equipment for the manufacture of testing of electronic components and materials, the following: and specially designed components, accessories and specially designed ODMA software therefor— | |
| a Equipment specially designed for the manufacture or testing of electron tubes and optical elements specified in entries IL1541, 1542, 1555, 1556, 1558 and 1559 in Group 3F, and specially designed components therefor | C | |
| b Equipment specially designed for the manufacture or testing of semiconductor devices, integrated circuits and assemblies, and systems incorporating or having the characteristics of such equipment, the following— | ||
| 1 equipment for the processing of materials for the manufacture of devices and components, the following— | ||
| a equipment for producing polycrystalline silicon specified in head (f) of entry IL1757 in Group 3I having a purity more than 99.99% in the form of rods (ingots, boules), pellets, sheets, tubes or small particles | C | |
| b equipment specically designed for purifying or processing III-V and II-VI semiconductor materials specified in the entry IL1757 in Group 3I, except crystal pullers | C | |
| c crystal pullers, furnaces, and gas systems, the following: | ||
| 1 types with specially designed stored programme controlled temperature, power input or gas, liquid or vapour flow | C | |
| 2 diffusion, oxidation and annealing furnaces for operation at pressures above 1 atmosphere (nominal) | C | |
| 3 annealing or re-crystallizing equipment other than constant temperature furnaces employing high rates of energy transfer capable of processing wafers at a rate greater than 50 cm² per minute | C | |
| 4 plasma enhanced or photo-enhanced chemical reactor equipment | C | |
| 5 equipment for automatic control of crystal taper and diameter, except taper and diameter control mechanisms using any of the following equipment techniques | C | |
| i radiation pyrometers; ii thermocouples; iii RF power sensors; or iv mass weighing (without digital or anomaly control permitting the growth of semiconductors). | ||
| 6 crystal pullers having any of the following characteristics: | ||
| i rechargeable without replacing the crucible container | C | |
| ii capable of operation at pressures above 2.5 × 10⁵ pascal (2.5 atmospheres absolute) or below 1 × 10⁵ pascal (1 atmosphere absolute) | C | |
| iii capable of pulling crystals of a diameter greater than 76.2 mm | C | |
| iv specially designed to minimize convection currents in the melt by the use of magnetic fields or multiple crucibles | C | |
| or | ||
| v capable of pulling sheet or ribbon crystals | C | |
| 7 vacuum induction-heated zone-refining equipment for operation at a pressure of 0.01 pascal or less | C | |
| d equipment for epitaxial growth having any of the following characteristics: | ||
| 1 operation at pressures below 10⁵ pascal (1 atmosphere absolute) | C | |
| 2 stored programme controlled | C | |
| 3 rotating vertical-support, radiant-heated reactors | C | |
| 4 specially designed for processing bubble memories | C | |
| 5 metal-organic chemical vapour deposition reactors; or | C | |
| 6 for liquid phase epitaxy | C | |
| e molecular beam epitaxial growth equipment | C | |
| f magnitically-enhanced sputtering equipment | C | |
| g equipment designed for ion implantation, or for ion-enhanced or photo-enhanced diffusion | C | |
| h equipment for selective or non-selective removal by dry methods of passivation layers, dielectrics, semiconductor materials, resists or metals | C | |
| except horizontal, cylindrical plasma etchers without stored programme controlled end-point detection, automatic loading or rotating mechanisms and not having the capability for parallel plate etching as used in semiconductor device manufacture and vacuum sputtering equipment designed to operate in the sputter etch mode. | ||
| i equipment for semiconductor device fabrication operating below 10⁵ pascal (1 atmosphere absolute) for the chemical vapour deposition of oxides, nitrides, metals and polysilicon except reactive sputtering equipment | C | |
| j electron beam systems (including scanning electron microscopes), capable of mask making or semiconductor device processing and having any of the following characteristics: | ||
| 1 electrostatic beam deflection | C | |
| 2 shaped, non-Gaussian beam profile | C | |
| 3 beam blanking capability | C | |
| except scanning electron microscopes equipped for Auger analysis; | ||
| 4 digital-to-analogue conversion rate greater than 3MHz | C | |
| 5 digital-to-analogue conversion accuracy greater than 12 bits, or | C | |
| 6 target to beam position feedback control precision of 1 micrometre or finer | C | |
| except electron beam deposition systems. | ||
| k surface finishing equipment, specially designed for the processing of semiconductor wafers and having any of the following characteristics: | ||
| 1 waxless or non-adhesive mounting | C | |
| 2 double-sided simultaneous polishing or lapping | C | |
| 3 capable of polishing and lapping wafers exceeding 76.2 mm in diameter, or | C | |
| 4 lappng or polishing in two stages on the same machine | C | |
| l interconnection equipment which, may include common single or multiple vacuum chambers, specially designed to permit the integration of equipment specified in this entry into a complete system | C | |
| 2 masks, mask substrates, mask-making equipment and image-transfer equipment for the manufacture of devices and components, the following— | ||
| a finished masks, and reticles and designs therefor | C | |
| b hard surface (eg chromium, silicon, iron oxide) coated substrates (eg glass, quartz, sapphire) for the preparation of masks having dimensions exceeding 76.2 × 76.2 mm | C | |
| c computer-aided design (CAD) equipment, for transforming schematic or logic diagrams into designs for producing semiconductor devices or integrated circuits, having any of the following functions: | ||
| 1 storage of pattern cells for subdivision of integrated circuits | C | |
| 2 scaling, positioning, or rotation of pattern cells | C | |
| 3 interactive graphic capabilities | C | |
| 4 design rule and circuit checking; or | C | |
| 5 circuit layout modification of the arrangement of the elements | C | |
| (Note: Software which performs any of the functions in subhead (b)(2)(c), or which can be used for transient analysis, for logic analysis or logic checking, for automatic routing or cell placement, for the generation of test vectors or for process simulation is specially designed ODMA software specified in the heading of this entry.) | ||
| d mask fabrication machines using photo-optical methods, the following: | ||
| 1 step and repeat cameras capable of producing arrays larger than 63.5 × 63.5 mm, or capable of producing a single exposure larger than 3.75 × 3.75 mm, in the focal plane, or capable of producing useful line widths of 3.5 micrometres or less | C | |
| 2 pattern generators specially designed for the generation or manufacture of masks or the creation of patterns in photosensitive layers and with placement precision finer than 10 micrometres | C | |
| 3 mask fabrication equipment containing automatic adjustment of focus or adjustment of the mask material into the focal plane | C | |
| 4 equipment and holders for altering masks or reticles or adding pellicles to remove defects | C | |
| e mask reticle or pellicle inspection equipment, the following: | ||
| 1 equipment for comparison with a precision of 0.75 micrometre or finer over an area of 63.5 × 63.5 mm or more | C | |
| 2 stored programme controlled equipment with a resoution of 0.25 micrometres or finer and with a precision of 0.75 micrometre or finer over a distance in one or two coordinates of 63.5 mm or more | C | |
| 3 stored programme controlled defect inspection equipment | C | |
| except conventional scanning electron microscopes, other than types specially designed and instrumented for automatic pattern inspection. | ||
| f align and expose equipment using photo-optical methods, including projection image transfer equipment, capable of performing any of the following functions: | ||
| 1 production of useful pattern size of less than 5 micrometres | C | |
| 2 alignment with a precision finer than 1 micrometre | C | |
| 3 field coverage exceeding 76.2 × 76.2 mm | C | |
| 4 wafer backside alignment | C | |
| 5 automatic alignment by the sensing of patterns or index marks on the substrate | C | |
| 6 projection image transfer for processing slices (wafers) of 50.8 mm or larger in diameter | C | |
| except non-contacting (proximity) image transfer equipment which does not perform any of the functions specified in subsheads (f)(1) to (f)(5) above. | ||
| g electron beam, ion beam, or X-ray equipment for projection image transfer | C | |
| h photo-optical or non-photo-optical step and repeat or partial field equipment for the transfer of the image on to the wafer | C | |
| i mask contact transfer equipment for imaging a field larger than 76.2 × 76.2 mm | C | |
| 3 stored programme controlled inspection equipment for the detection of defects in processed wafers, substrates or chips using optical pattern comparison or other machine scanning techniques | C | |
| except conventional scanning electron microscopes, other than when specially designed and instrumented for automatic pattern inspection. | ||
| 4 specially designed stored programme controlled measuring and analysis equipment, the following— | ||
| a equipment specially designed for the measurement of oxygen or carbon content in semiconductor materials | C | |
| b equipment for concurrent etching and doping profile analysis (employing capacitance-voltage or current-voltage analysis techniques) | C | |
| c equipment for linewidth measurement with a resolution of 1.0 micrometre or finer | C | |
| d specially designed flatness measurement instruments capable of measuring deviations from flatness of 10 micrometres or less with a resolution of 1 micrometre or finer | C | |
| 5 equipment for the assembly of integrated circuits, the following— | ||
| a stored programme controlled die (chip) mounters and bonders with a positioning accuracy finer than 50 micrometres or incremental steps finer than 6.4 micrometres | C | |
| b stored programme controlled wire bonders and welders for performing consecutive bonding operations | C | |
| c equipment for producing multiple bonds in a single operation (eg beam lead bonders, chip carrier bonders, tape bonders) | C | |
| d semi-automatic or automatic hot cap sealers, in which the cap is heated locally to a higher temperature than the body of the package, specially designed for ceramic microcircuit packages specified in head (b) of entry IL1564 in Group 3F and which have a throughput equal to or greater than one package per minute except general purpose resistance type spot welders | C | |
| e thermal compression bonders, also known as nailhead bonders | C | |
| 6 stored programme controlled wafer probing equipment, the following— | ||
| a equipment having positioning accuracy finer than 50 micrometres, or incremental steps finer than 6.4 micrometres | C | |
| b equipment having individual die location read-out (X-Y position information) during testing | C | |
| c equipment capable of testing devices having more than a total of 24 terminals | C | |
| d equipment having automatic slice (wafer) alignment | C | |
| 7 test equipment, the following— | ||
| i stored programme controlled equipment specially designed for testing discrete semiconductor devices and unencapsulated dice, capable of performing any of the following functions | C | |
| a measurement of time intervals of less then 10 ns; b measurement of parameters (eg fT, S-parameters, noise figure) at frequencies greater than 250 MHz; c resolution of currents of less than 100 picoamperes; or d measurements of spectral response at wavelengths outside the range from 450 to 950 nm; | ||
| Note: discrete semiconductor devices include, for example, diodes, transistors, thyristors, photocells and solar cells. | ||
| ii stored programme controlled equipment specially designed for testing integrated circuits, and assemblies thereof, capable of performing any of the following functions | C | |
| a functional (truth table) testing at a pattern rate greater than 2 MHz; b resolution of currents of less than 1 nonoampere; c testing of integrated circuits (not mounted on circuit boards) in packages having more than a total of 24 terminals, except equipment specially designed for and dedicated to the testing of integrated circuits not specified in entry IL1564 in Group 3G; or d measurement of rise times, fall times and edge placement times with a resolution of less than 20 ns; | ||
| except— 1 test equipment which is not of a general-purpose nature and which is specially designed for, and dedicated to, testing assemblies or a class of assemblies for home and entertainment applications and 2 test equipment which is not of a general-purpose nature and which is specially designed for, and dedicated to, testing electronic components, assemblies and integrated circuits the subject of a specific exception to IL1564 in Group 3G provided that such test equipment does not incorporate computing facilities with user-accessible programming capabilities; | ||
| iii equipment specially designed for determining the performance of focal-plane arrays at wavelengths more than 1,200 nm, using stored programme controlled measurements or computer aided evaluation and having any of the following characteristics | C | |
| a using scanning light spot diameters of less than 0.12 mm; b designed for measuring photosensitive performance parameters and for evaluating frequency response, modulation transfer function, uniformity of responsivity or noise; or c designed for evaluating arrays capable of creating images of greater than 32 × 32 line elements; | ||
| iv specially designed for bubble memories | C | |
| 8 Class 10 filters capable of providing an environment of 10 or less particles of 0.3 micrometre or more per 0.02832/m³ and filter materials therefor | C | |
| 9 Electron-beam test systems (capable of operating at or below 3,000 eV), for non-contactive probing of powered-up semiconductor devices having any of the following— | C | |
| a Stroboscopic capability with either beam blanking or detector strobing; b An electron spectrometer for voltage measurements with a rsolution of less than one-half (0.5) volt; or c Electrical tests fixtures for performance analysis of integrated circuits. | ||
| except— Scanning electron microscopes, other than those specially designed and instrumented for non-contactive probing of a powered up semiconductor device, are not excluded from head (b). | ||
| In this entry— “masks” means those used in electron beam lithography, X-ray lithography, and ultra-violet lithography, as well as ultra-violet and visible photolithography; “magnetically-enhanced” means equipment incorporating a cathode assembly having an integral magnetic structure for enhancing the plasma intensity; “stored programme controlled” means controlled by using instructions stored in an electronic storage which a processor can erxecute in order to direct the performance of predetermned functions. | ||
| IL1356 | Equipment specially designed or incorporating modifications for the continuous coating of polyester-base magnetic tape specified in entry IL1572 in Group 3G, and specially designed components therefor | C |
| except general purpose continuous coating equipment. | ||
| L1357 | Equipment for the production of fibres specified in the entry IL1763 in Group 3I or their composites, the following and specially designed components and accessories and specially designed ODMA software therefor— | |
| a Filament winding machines of which the motions for positioning wrapping and winding fibres are coordinated and programmed in three or more axes, specially designed to fabricate composite structures or laminates from fibrous and filamentary materials; and coordinating and programming controls therefor | C | |
| b Tape-laying machines of which the motions for positioning and laying tape and sheets are coordinated and programmed in two or more axes, specially designed for the manufacture of composite airframes and missile structures | C | |
| c Multidirectional, multidimensional weaving machines and interlacing machines, including adapters and modification kits, for weaving, interlacing or braiding fibres to manufacture composite structures, except textile machinery which has not been modified for the above end-uses | C | |
| d Specially designed or adapted equipment for the production of fibrous and filamentary materials specified in head (a) or (b) in the entry IL1763 in Group 3I, the following— | ||
| 1 equipment for converting polymeric fibres, (such as polyacrylonitrile, rayon, or polycarbosilane) including special provision to strain the fibre during heating | C | |
| 2 equipment for the vapour deposition of elements or compounds on heated filamentary substrates | C | |
| and | ||
| 3 equipment for the wet-spinning of refractory ceramics (such as aluminium oxide) | C | |
| e Specially designed or adapted equipment for special fibre surface treatment or for producing prepregs and preforms specified in head (c) in the entry IL1763 in Group 3I | C | |
| NOTE Specially designed or adapted components and accessories for the machines specified in this entry include, but are not limited to, moulds, mandrels, dies, fixtures and tooling for pressing, curing, carbonising, graphitising, casting, sintering or bonding of preforms, composite structures, laminates and manufactures therefore specified in head (d) to the entry IL1763 in Group 3I. | ||
| IL1358 | Equipment specially designed for the manufacture or testing of devices and assemblies thereof specified in the entry IL1588 in Group 3G or magnetic recording media specified in the entry IL1572 in Group 3G the following: and specially designed components and specially designed ODMA software therefor— Equipment for the manufacture of single and multi-aperture forms specified in heads (b), (c) and (d) mentioned in entry IL1588 in Group 3G, the following— | |
| 1 automatic presses to produce specified types | C | |
| 2 press dies to produce specified types | C | |
| 3 automatic equipment for monitoring, grading, sorting, exercising or testing of specified types | C | |
| b Equipment for the manufacture of thin film memory storage or switching devices having square hysteresis loops and automatic equipment for monitoring, grading, sorting, exercising or testing of devices specified in head (e) of entry IL1588 in Group 3G | C | |
| c Automatic equipment for monitoring, exercising or testing assemblies of devices specified in heads (b), (c), (d) or (e) of the entry IL1588 in Group 3G | C | |
| d Equipment which incorporates specially designed modifications for the application of magnetic coating to flexible disk recording media with a packing density exceeding 2,460 bit per cm | C | |
| except general purpose coating equipment. | ||
| e Equipment specially designed for the application of magnetic coating to non-flexible (rigid) disk type recording madia not excepted in paragraph (vi) of head (d) of entry IL1572 in Group 3G | C | |
| f Stored programme controlled equipment for monitoring, grading, exercising or testing recording media, other than tape, specified in head (d) of entry IL1572 in Group 3G | C | |
| Note: For the purpose of this entry “single aperture forms” means single aperture forms having either of the following characteristics: switching rate of 0.3 microsecond or faster at the minimum field strength required for switching at 40°C or a maximum dimension less than 0.45 mm except single aperture forms which have: a switching time equal to or more than 0.24 microsecond; and a maximum dimension of 0.30 mm or more. | ||
| In this entry— “automatic” means machinery not requiring the assistance of a human operator to complete its function(s) during each complete cycle of operations; “function” does not include the initial loading or final unloading of material from the machine. | ||
| IL1359 | Specially designed tooling and fixtures for the manufacture of fibre-optic connectors and couplers specified in head (e) of the entry IL1526 in Group 3F | C |
| IL1360 | Stored programme controlled equipment capable of automatic X-ray orientation and angle correction of double-rotated stress-compensated (SC) quartz crystals specified in entry IL1587 in Group 3G, with a tolerance of 10 seconds of arc maintained simultaneously in both angles of rotation | C |
| In this entry “stored programme controlled” means controlled by using instructions stored in an electronic storage which a processor can execute in order to direct the performance of predetermined functions. | ||
| IL1361 | Test facilities and equipment for the design or development of aircraft or gas turbine aero-engines, the following and specially designed components, accessories and specially designed ODMA software therefor— | |
| a Supersonic (Mach 1.4 to Mach 5), hypersonic (Mach 5 to Mach 15) and hypervelocity (above Mach 15) wind tunnels | C | |
| except— i supersonic (Mach 1.4 to Mach 5) wind tunnels not specially designed for or fitted with means of, preheating the air; or ii wind tunnels speciall;y designed for educational purposes and having a test section size (measured internally of less than 25 cm; (Note: by test section size is understood the diameter of the circle, or the side of the square, or the longest side of the rectangle constituting possible shapes of the test section.) | ||
| b Devices for simulating flow-environments of Mach 5 and above, regardless of the actual Mach number at which the devices operate, including hot shot tunnels, plasma arc tunnels, shock tubes, shock tunnels, gas tunnels and light gas guns | C | |
| c Wind tunnels and devices, other than two dimensional (2-D) sections that have unique capabilities for simulating Reynolds number flow in excess of 25 × 10⁶, at transonic velocities | C | |
| d Automated control systems, instrumentation (including sensors) and automated date-acquisition equipment, specially designed for use with wind tunnels and devices specified in head (a), (b) or (c) above | C | |
| e Models, specially designed for use with wind tunnels or with the devices specified in head (b) or (c) above, of aircraft, helicopters, airfoils, spacecraft, space-launch vehicles, rockets or surface-effect vehicles specified in the entries in Groups 1 and 3E relating thereto or of surface-effect vehicles specified in head (b) of the entry IL1416 relating to vessels | C | |
| f Specially designed electromagnetic interference and electromagnetic pulse (EMI/EMP) simulators | C | |
| g Specially designed test facilities and equipment for the development of gas turbine aero-engines and components, the following— | ||
| 1 special test facilities capable of applying dynamic flight loads, measuring performance or simulating the design operating environments for rotating assemblies of aero-engines | C | |
| 2 test facilities, test rigs and simulators for measuring combustion system and hot gas flow path performance, heat transfer and durability for static assemblies and aero-engine components | C | |
| 3 specially designed test rigs, equipment or modified gas turbine engines which are utilized for development of gas turbine aero-engine internal flow systems (gas path seals, air-oil seals and disc cavity flow fields) | C | |
| IL1362 | Vibration test equpment the following— | |
| a Vibration test equipment using digital control techniques and specially designed ancillary equipment and specially designed ODMA software therefor | C | |
| except individual exciters (thrusters) with a maximum thrust of less than 100 kN (22,500 lb); analogue equipment; mechanical and pneumatic exciters (thrusters); vibrometers; | ||
| b High intensity acoustic test equipment capable of producing an overall sound pressure level of 140 dB or greater (referenced to 2 × 10−5 N/m²) or with a rated output of 4kW or greater and specially designed ancillary equipment and specially designed ODMA software therefor | C | |
| except analogue equipment. | ||
| c Ground vibration (including modal survey) test equipment that uses digital control techniques and specially designed ancillary equipment, and specially designed ODMA software therefor | C | |
| except analogue equipment. Note: vibration and acoustic test systems typically consist of one or more exciters (thrusters), or acoustic noise generators, together with ancillary equipment for instrumentation, control, data acquisition and analysis. | ||
| IL1363 | Specially designed water tunnel equipment, components, accessories and databases for the design and development of vessels, the following: and specially designed ODMA software therefor— | |
| a Automated control systems, instrumentation (including sensors) and data acquisition equipment specially designed for water tunnels | C | |
| b Automated equipment to control air pressure acting on the surface of the water in the test section during the operation of the water tunnel | C | |
| c Components and accessories for water tunnels, the following— | ||
| 1 balance and support systems | C | |
| 2 automated flow or noise measuring devices, and | C | |
| 3 models of hydrofoil vessels, surface-effect vehicles, SWATH vessels and specially designed equipment and components specified in heads (a), (b), (c), (e), (f), (g) and (h) in entry IL1416 in Group 3E for use in water tunnels | C | |
| d Databases generated by use of equipment specified in this entry | C | |
| In this entry “database” shall have the same meaning as in entry IL1566 in Group 3G. | ||
| IL1364 | Machinery and equipment for the manufacture of hydrofoil vessel and surface-effect vehicle and SWATH vessel structures and components, the following: and specially designed components and accesspories therefor— | |
| a Specially designed equipment for manufacturing anisotropic, orthotropic or sandwich structures from components specified in subhead (h)(3) of the entry IL1416 in Group 3E | C | |
| Note: in this head— “Anisotropic construction” means the use of fibre reinforcing members aligned so that the load-carrying ability of the structure can be primarily orientated in the direction of expected stress. “Orthotropic construction” means a method of stiffening plates in which the structural members are at right angles to each other. “Sandwich construction” means the use of structural members or plates which are fabricated and permanently affixed in layers to enhance their strength and reduce their weight. | ||
| b Specially designed equipment for the production and testing of flexible materials for skirts, seals, air curtains, bags and fingers for surface-effect vehicles | C | |
| c Specially designed equipment for the production of water-screw propellers and hub assemblies and water-screw propeller systems specified in heads (c) and (f) of entry IL1416 in Group 3E | C | |
| d Specially designed equipment for the production, dynamic balancing and automated testing and inspection of lift fans for surface-effect vehicles | C | |
| e Specially designed equipment for the production of water-jet propulsion pumps rated at 3,000 hp or greater, or multiple-pump system equivalents thereof | C | |
| f Specially designed equipment for the production, dynamic balancing and automatic testing of AC-AC synchronous and AC-DC systems, sectored disc and concentric-drum rotors for DC momopolar machines | C | |
| IL1365 | Equipment specially designed for in-service monitoring of acoustic emissions in airborne vehicles, or underwater vehicles specified in the entry IL1418 in Group 3E, capable of discriminating acoustic emissions related to crack growth from innocuous noise sources and capable of spatial location of the crack, and specially designed components, accessories and specially designed ODMA software therefor | C |
| except, general purpose acoustic emission equipment. Note: The methods used for discriminating acoustic emissions from innocuous noise sources include pattern recognition techniques. | ||
| IL1370 | Machine-tools for generating optical quality surfaces, specially designed components and accessories the following and specially designed ODMA software therefor— | |
| a Turning machines using a single point cutting tool and having all of the following characteristics— | C | |
| 1 slide positioning accuracy less (finer) than 0.0005 mm per 300 mm of travel, TIR (peak-to-peak); 2 slide positioning repeatability less (finer) than 0.0002 mm per 300 mm of travel, TIR (peak-to-peak); 3 spindle run-out (radial and axial) less than 0.0004 mm TIR (peak-to-peak); 4 angular deviation of the slide movement (yaw, pitch and roll) less (finer) than 2 seconds of arc (peak-to-peak) over full travel; 5 slide perpendicularity less than 0.001 mm per 300 mm of travel, TIR (peak-to-peak); | ||
| b Fly cutting machines having both of the following characteristics— | C | |
| 1 spindle run-out (radial and axial) less than 0.0004 mm TIR (peak-to-peak); 2 angular deviation of slide movement (yaw, pitch and roll) less (finer) than 2 seconds of arc (peak-to-peak) over full travel; | ||
| c Specially designed components, the following— | ||
| 1 spindle assemblies, consisting of spindles and bearings as a minimal assembly, except those assemblies with axial and radial axis motion measured along the spindle axis in one revolution of the spindle equal to or greater (coarser) than 0.0008 mm TIR (peak-to-peak) | C | |
| 2 linear induction motors used as drives for slides, having all of the following characteristics— | C | |
| i stroke greater than 200 mm; ii nominal force rating greater than 45N; iii minimum controlled incremental movement less than 0.001 mm; | ||
| d Single point diamond cutting tool inserts having all of the following characteristics | C | |
| 1 flawless and chip-free cutting edge when magnified 400 times in any direction; 2 cutting radius between 0.1 and 5 mm; 3 cutting radius out-of-roundness less than 0.002 mm TIR (peak-to-peak). | ||
| ILO1371 | Anti-friction bearings, the following— Ball and roller bearings having an inner bore diameter of 10 mm or less and tolerances of ABEC 5, RBEC 5 or better and either of the following characteristics— | |
| 1 made of special materials that is to say, with rings, balls or rollers made from any steel alloy or other material (including but not limited to high-speed tool steels, Monel metal, beryllium, metalloids, ceramics and sintered metal composites), except the following; low-carbon steel, SAE-52100 high carbon chromium steel, SAE-4615 nickel molybdenum steel, AISI-440C (SAE-51440C) stainless steel (or national equivalents), or | C | |
| 2 manufactured for use at normal operating temperatures over 150°C either by use of special materials or by special heat treatment | C | |
| b Ball and roller bearings (exclusive of separable ball bearings and thrust ball bearings) having an inner bore diameter exceeding 10 mm and having tolerances of ABEC 7, RBEC 7 or better and either of the following characteristics— | ||
| 1 made of special materials, that is to say, with rings, balls or rollers made from any steel alloy or other material (including but not limited to high-speed tool steels, Monel metal, beryllium, metalloids, ceramics and sintered metal composites), except the following; low-carbon steel, SAE-52100 high carbon chromium steel, SAE-4615 nickel molybdenum steel, AISI-440C (SAE-51440C) stainless steel (or national equivalents), or | C | |
| 2 manufactured for use at normal operating temperatures over 150°C either by use of special materials or by special heat treatment | C | |
| c Ball and roller bearings having tolerances better than ABEC 7 | C | |
| d Gas-lubricated foil bearings | C | |
| e Bearing parts usable only for bearings specified in this entry, the following: outer rings, inner rings, retainers, balls, rollers and sub-assemblies | C | |
| There shall be excluded from this entry hollow bearings. | ||
| IL1372 | Technology for industrial gas turbine engines, the following— | |
| a Technology common to industrial gas turbine engines and gas turbine aero-engines specified in head (d) of the entry IL1460 in Group 3E | D | |
| b Technology common to industrial gas turbine engines and marine gas turbine engines specified in the entry IL1431 in Group 3E | D | |
| IL1385 | Specially designed production equipment for compasses, gyroscopes (gyros), accelerometers and inertial equipment specified in the entry IL1485 in Group 3E | C |
| Note: This entry includes— For ring laser gyro equipment, the following equipment used to characterize mirrors, having the threshold accuracy shown or better: Rectilinear scatterometer (10 ppm) Polar scatterometer (10 ppm) Reflectometer (50 ppm) Profilometer (5 angströms) For other inertial equipment: Inertial Measurement Unit (IMU) module tester IMU platform tester IMU stable element handling fixture IMU platform balance fixture Gyro tuning test station Gyro dynamic balance station Gyro run-in/motor test station Gyro evacuation and fill station Centrifuge fixture for gyro bearings Accelerometer axis align station Accelerometer test station | ||
| IL1388 | Specially designed equipment for the deposition, processing and in-process control of inorganic overlays, coatings and surface modifications, for non-electric substrates by processes specified in entry IL1389 in this Group, the following: and specially designed automated handling, positioning, manipulation and control components and specially designed ODMA software therefor— | |
| a stored programme controlled chemical vapour deposition (CVD) production equipment with both of the following characteristics | C | |
| 1 process modified for one of the following— a pulsating CVD; b controlled nucleation thermal decomposition (CNTD); or c plasma anhanced or plasma assisted CVD; and 2 any of the following characateristics— a incorporating high vacuum (less than or equal to 10−7 atm) rotating seals; b operating at reduced pressure (less than 1 atm); or c incorporating in situ coating thickness control; | ||
| b Stored programme controlled ion implantation production equipment having beam currents of 5 mA or higher | C | |
| c Stored programme controlled electron beam physical vapour deposition (EB-PVD) production equipment with either of the following characteristics | C | |
| i incorporating power systems greater than 80 kW; or ii 1 incorporating power systems greater than 50 kW; and 2 having both of the following characteristics: a incorporating a liquid pool level laser control system which regulates precisely the ingots feed rate; and b incorporating a computer controlled rate monitor operating on the principle of photo-luminescence of the ionised atoms in the vaporant stream to control the deposition rate of a coating containing two or more elements | ||
| d Stored programme controlled plasma spraying production equipment having any of the following characteristics— | C | |
| 1 operating at atmospheric pressure discharging molten or partially molten material particles into air or inert gas (shrouded torch) at nozzle exit gas velocities greater than 750 m/sec calculated at 293 K at 1 atmosphere; 2 operating at reduced pressure controlled atmosphere (less than or equal to 100 millibar (0.1 atm) measured above and within 30 cm of the gun nozzle exit) in a vacuum chamber capable of evacuation down to 10−4 millibar prior to the spraying process; or 3 incorporating in situ coating thickness control. | ||
| e Stored programme controlled sputter deposition production equipment capable of current densities of 5 mA/cm² or higher at a deposition rate of 10 micrometres/hr or higher | C | |
| f Stored programme controlled cathodic arc deposition production equipment with either of the following characteristics— | C | |
| 1 incorporating target areas larger than 45.6 cm²; or 2 incorporating a magnetic field steering control of the arc spot on the cathode | ||
| g Deposition process or surface modification equipment for stored programme controlled production processing which enables the combining of any individual deposition processes specified in heads (a) to (f) above (inclusive) so as to enhance the capability of such individual processes | C | |
| For the purpose of this entry “stored programme controlled” means controlled by using instructions stored in an electronic storage which a processor can execute in order to direct the performance of perdetermined functions. | ||
| IL1389 | Technology and sp[ecially designed ODMA software therefor, the following— Technology for application to non electronic devices designed to achieve— | |
| by any process specified in column 1 of the Table below on any substrate specified in that part of column 2 of the Table which relates to that process any inorganic overlay coating or inorganic surface modification coating specified in that part of column 3 of the Table which relates to that substrate | D | |
| except that this head does not include technology for single stage pack cementation of solid airfoils. | ||
| b Specially designed ODMA software for the technology included in head (a) | D | |
| Note: The processes included in column 1 are defined in Notes A(a)-(i) below. Other terms used in the Table are defined in Notes B(1)-(8) below. |
A
chemical vapour deposition (CVD)
B
electron-beram physical vapour deposition (EB-PVD)
C
electro-phoretic deposition
D
pack cementation
E
plasma spraying (high velocity or low pressure only)
F
slurry deposition
G
sputtering (high rate, reactive or radio frequency only)
H
ion implantation
Notes
GROUP 3E — Transportation equipment
I
Materials and manufacturing procedures
II
Construction methods
| In this entry— “civil aircraft” and “civil helicopters” means only those types of civil aircraft and civil helicopters which are listed by designation in published airworthiness certification lists by the civil aviation authorities to fly commercial civil internal and external routes or for legitimate civil, private or business use. “helicopter power transfer systems” means all those components which transfer power from the engine to the main and tail rotor blade(s). Note: Aero-engines, APUs or helicopter power transfer systems which have any special feature designed for a military application are specified in the entry ML10 in Group 1. | ||
|---|---|---|
| PL7010 | Aircraft and helicopters having a maximum all up weight of 680 Kg or more | L, Z |
| PL7011 | Specially designed components for aircraft and helicopters specified in head (a) of the entry IL1460 other than components falling within a description in Group 1 or under any other heading in Group 3 of Part II, of this Schedule | W |
| IL1465 | Spacecraft and launch vehicles, the following— | |
| a Spacecraft, manned or unmanned (not including their payloads) | C | |
| except scientific mission space probes which do not contain equipment specified in head (c) below or elsewhere in this Schedule. | ||
| b Launch vehicles | C | |
| c Propulsion systems, guidance equipment, attitude control equipment and on-board communications equipment for remote control of the equipment specified in head (a) or (b) above | C | |
| d Specially designed components for the equipment specified in heads (a), (b) and (c) above | C | |
| In this entry “spacecraft” means active and passive satellites and space probes. | ||
| IL1485 | Compasses, gyroscopes, (gyros), accelerometers and inertial equipment, the following: and specially designed software and specially designed components therefor— | |
| a Gyro compasses with provision for determining and transmitting ship’s level reference data (roll, pitch) in addition to own ship’s course data | C | |
| b Integrated flight instrument systems which include tyrostabilisers or automatic pilots for aircraft and specially designed integration software therefor | C | |
| except— flight instrument systems integrated solely for VOR/ILS navigation and approaches, or integrated flight instrument systems which— have been in normal civil use for more than two yhears; and are standard equipment and software of aircraft not specified in the entry IL1460 in this Group. Note: An “integrated flight instrument system” is a primary instrument display system of attitude and azimuth with facilities for giving manoeuvre guidance information to the pilot and often integrated with an autopilot to the extent of embodying a common unit for setting up the required demands. | ||
| c Gyro-astro compasses and other devices which derive position or orientation by means of automatically tracking celestial bodies | C | |
| d Gyro-stabilisers used for other purposes than aircraft control | C | |
| except— those for stabilising an entire surface vessel; or those which have been in normal civil use for more than two years. | ||
| e Automatic pilots used for purposes other than aircraft control and specially designed integration software therefor, except marine types for surface vessels | C | |
| f Accelerometers with a threshold of 0.005 g or less or a linearity error within 0.25 per cent of full scale output or both, which are designed for use in inertial navigation systems or in guidance systems of all types | C | |
| g Gyros with a rated free directional drift rate (rated free precession) of less than 0.5 degree (1 Sigma or r.m.s.) per hour in a 1 g environment | C | |
| h Continuous output accelerometers which utilize servo or force balance techniques and gyros, both specified to function at acceleration levels greater than 100 g | C | |
| i Inertial or other equipment using accelerometers specified in head (f) or (h) above or gyros specified in head (g) or (h) above, and systems incorporating such equipmenmt, and specially designed integration software therefor | C | |
| j Specially designed test, calibration and alignment equipment for goods specified in heads (a) to (i) above | C |
GROUP 3F
| (1) S-band: | 2.5–2.69 GHz |
|---|---|
| (2) C-band: | 3.4–4.2 GHz 4.5–4.8 GHz |
| (3) Ku- and Ka-band: | 10.7–12.75 GHz |
Electronic equipment and instruments for testing, measuring (e.g. time interval measurement), calibrating or counting, or for microprocessor/microcomputer development, the following: and specially designed software therefor—
- (a) Equipment, the following—
- (1) equipment designed as reference frequency standards for laboratory use and having either of the following characteristics—
NOTE:
NOTES:
GROUP 3G — Electronic Equipment including Computers, Software and Telecommunications, and Photographic Equipment
NOTE:
GROUP 3H — Metals, Minerals and their Manufactures
| In this Group, the following definitions apply— “Crude forms” means anodes, balls, bars (including notched bars and wire bars), billets, blocks, blooms, brickets, cakes, cathodes, crystals, cubes, dice, grains, granules, ingots, lumps, pellets, pigs, powder, rondelles, shot, slabs, slugs, sponge, sticks. “Semi-fabricated forms” means (whether or not coated, plated, drilled or punched)— in the form of wrought or worked materials fabricated by rolling, drawing, extruding or grinding, (i.e. angles, channels, circles, discs, dust, flakes, foils and leaf, forging, plate, powder, pressings and stampings, ribbons, rings, rods (including bare welding rods, wire rods, and rolled wire). Sections, shapes, sheets, strip, pipe and tubes (including tube rounds, squares, and hollows), drawn or extruded wire); cast material produced by casting in sand, die, metal, plaster or other types of moulds, including high pressure castings, sintered forms and forms made by powder metallurgy. | ||
|---|---|---|
| IL1601 | Inert gas and vacuum atomizing technology to achieve sphericity and uniform size of particles in metal powders regardless of the type of metal and regardless of whether or not this powder is specified in this Schedule | D |
| IL1602 | Pyrolitic deposition technology and specially designed components related thereto the following— | |
| a Technology for producing pyrolitically derived materials formed on a mould, mandrel or other substrate from precursor gases which decompose in the 1,573 K (1,300°C) to 3,173 K (2,900°C) temperature range at pressures of 133.3 Pa to 19.995 kPa (including the composition of precursor gases, flow rates, and process control schedules and parameters) | D | |
| b Specially nozzles for the above processes | C | |
| IL1631 | Magnetic metals of all types and of whatever form having any of the following characteristics— | |
| a Initial permeability: 0.15 henry/m (120,000 gauss/oersteds) or more calculated at induction 0 and magnetic field strength 0 or the equivalent. | C | |
| Note: Measurement of initial permeability must be carried out on materials which: a have a thickness between 0.076 mm and 2.54 mm; and b are fully annealed. | ||
| b Remanence: 98.5% or over of maximum magnetic flux for materials having magnetic permeability | C | |
| c Capable of an energy product of 200,000 J/m³ (25 × 10⁶ gauss-oersteds) or more | C | |
| d Grain-oriented iron alloy sheets or strips of a thickness of 0.1mm or less | C | |
| e Magnetostrictive alloy having either of the following characteristics— | ||
| 1 saturation magnetostriction more than 5 × 10−4 or | C | |
| 2 magnetomechanical coupling factor (k) more than 0.8 | C | |
| f Amorphous alloy strips having both of the following characteristics | C | |
| 1 composition having a minimum 75 weight per cent of one or more of the elements iron, cobalt and nickel; and 2 saturation magnetic induction (Bs) of 1.6 tesla or more, and either— i strip thickness of 0.020 mm or less; or ii electrical resistivity of 2 × 10−4 ohm —cm or more. | ||
| IL1635 | Steel alloys in crude or semi-fabricated form, which contain all of the following major alloy elements in the amounts listed by weight— | C |
| a 4.5 to 5.95% nickel; b 0.3 to 1.0% chromium; c 0.2 to 0.75% molybdenum; d 0.04 to 0.15% vanadium; e Less than 0.19% carbon. | ||
| IL1648 | Cobalt-based alloys (i.e. containing a higher percentage by weight of cobalt than of any other element), the following— | |
| a Those which are dispersion strengthened and contain more than 1% of oxides of thorium, aluminium, yttrium zirconiun or cerium | C | |
| b Those containing 0.05% or more of scandium, yttrium, didymium, cerium, lanthanum, neodymium, or praseodymium | C | |
| IL1661 | Nickel-based alloys (i.e. containing a higher percentage by weight of nickel than of any other element), the following— | |
| a Those which are dispersion strengthened and contain more than 1% of oxides of thorium, aluminium, yttrium, zirconium, cerium, or lanthanum | C | |
| b Those containing 0.05% or more scandium, yttrium, didymium, cerium, lanthanum, neodymium, or praseodymium | C | |
| c Those containing 10% or more by weight of aluminium in the form of nickel aluminide, in crude or semi-fabricated forms, and scrap thereof | C | |
| IL1672 | Titanium-based alloys containing 12% or more by weight of aluminium in the forms of titanium aluminide, in crude or semi-fabricated forms, and scrap thereof | C |
| IL1675 | Superconductive materials of all types and processed conductors containing at least one superconducting constituent, which are designed for operation at temperatures below 103 K (−170°C) | C |
| except Processed conductors having superconducting filaments embedded in a copper or copper-based mixture matrix and either of the following sets of characteristics— either: the superconducting constituent, when evaluated in sample lengths of less than one metre, does not remain in the superconducting state when exposed to a magnetic induction in excess of 12T at a temperature of 4.2 K (−268°C); the superconducting constituent or filament has a cross-section area greater than 3.14 × 10−4 mm² (20-micrometre diameter for circular filaments); and the conductor is either non-coated or insulated with varnish, glass fibre, polyamide or polyimide; or containing niobium-titanium wire; having a filament cross-sectional area of more than 9.5 × 10−5 mm² (11-micrometre diameter for circular filaments) or greater; and a mass of each processed conductor including the matric not exceeding 10 kg. | ||
| (Note: Superconductive materials are metals, alloys and compounds which lose electrical resistance near absolute zero of temperature, i.e. they have infinite electrical conductivity and can carry very large electrical currents without Joule heating. The superconducting state for each material is individually characterised by a critical temperature, a critical magnetic field (which is a function of temperature) and a critical current density (which is a function of both magnetic field and temperature). Materials remain in the superconducting state provided temperature, magnetic field and current density are all less than the critical values.) | ||
| PL7001 | Aluminium alloys, the following: tubes, bars or forged forms having an outside diameter greater than 75mm and less than 400mm and a tensile strength of 460 × 10⁶ N/m² or greater | W |
| PL7002 | Maraging steel alloy capable of ultimate tensile strength of 2.050 × 109 N/m² or greater, whether or not finally heat treated, in crude, semi-fabricated or fabricated form | W |
| PL7012 | Tantalum (or Tantalum lined) crucibles for casting actinide metals | W |
GROUP 3I — Chemicals, Metalloids and Petroleum Products
| IL1702 | Hydraulic fluids which contain as the principal ingredient petroleum (mineral) oils, synthetic hydrocarbon oils, non-fluorinated silicones or fluorocarbons and which have all of the following characteristics— | C |
|---|---|---|
| a a flash point of greater than 477 K (204°C); b a pour point of 239 K (−34°C) or lower; c a viscosity index of 75 or greater; and d thermally stable at 616 K (343°C). | ||
| Notes “Flash point” is determined using the “Cleveland Open Cup Method” as shown in ASTM D—92 or national equivalents. The following is the test procedure for determining thermal stability: Twenty cc of the fluid under test shall be placed in a 46 cc type 317 stainless steel chamber containing one each of 0.25 cm (nominal) diameter balls of M—10 tool steel, 52100 steel and naval bronze (60% Cu, 39% Zn, 0.75% Sn). The chamber shall be purged with nitrogen, sealed at atmospheric pressure and the temperature raised to 644 ±6 K (371 ±6°C), and maintained at this temperature for six hours. The specimen will be considered thermally stable if at the completion of the above procedure all of the following conditions are met: the loss in weight of each ball is less than 0.1 mg/sq cm of ball surface; the change in original viscosity as determined at 38°C is less than 25% when measured in the centistokes system of units; the total acid or base number is less than 0.40. The viscosity index is a term used to express the ratio of the viscosity values measured at 311 K (37.8°C) and 372 K (98.9°C) in accordance with ASTM Standard 168. | ||
| IL1715 | Boron, the following— | |
| a Boron element (metal) in all forms | C | |
| b Boron compounds, mixtures, and composites containing 5% or more of boron (except pharmaceutical preparations packaged for retail sale), the following— | ||
| 1 non-ceramic boron-nitrogen compounds (e.g. borazanes, borazines and boropyrazoyls) | C | |
| 2 boron hydrides (e.g. boranes), except sodium boron hydride, potassium boron hydride, monoborane, diborane and triborane | C | |
| 3 organoboron compounds, including metallo-organoboron compounds | C | |
| PL7006 | Boron compounds and mixtures in which the boron—10 isotope comprises more than 20% of the total boron content | W |
| IL1733 | Base materials, non-composite ceramic materials, ceramic-ceramic composite materials and precursor materials for the manufacture of high temperature fine technical ceramic products, the following— | |
| a Base materials having all the following characteristics— | C | |
| 1 any of the following compositions— i single or complex oxides of zirconium, and complex oxides of silicon and aluminium; ii single or complex borides of zirconium; iii single or complex carbides of silicon or boron; or iv single or complex nitrides of silicon, boron, aluminium, or zirconium; 2 total metallic impurities, excluding intentional additions, of less than— i 1,000 ppm for single oxides or carbides; ii 5,000 ppm for complex compounds, single borides or single nitrides; and 3 average particle size less than or equal to 5 micrometers and no more than 10% of the particles larger than 10 micrometers except for zirconia where these limits are 1 micrometre and 5 micrometres respectively. | ||
| b Non-composite ceramic materials, in crude or semi-fabricated form, composed of any material specified in head (a) above, except abrasives | C | |
| c Ceramic-ceramic composite materials containing finely dispersed particles or phases or any non-metallic fibrous or whisker-like materials, whether externally introduced or grown in situ during processing, where the following materials form the host matrix— | ||
| 1 all oxides, including glasses | C | |
| 2 carbides or nitrides of silicon or boron | C | |
| 3 borides or nitrides of zirconium or boroides, carbides or nitrides of hafnium | C | |
| 4 any combination of the materials specified in subheads (c)(1) to (3) above | C | |
| except manufactured products or components not specified elsewhere in this Schedule Precursor materials, (i.e., special-purpose polymeric or metallo-organic materials for producing any base or phases of the materials specified in heads (b) or (c) above), the following— | ||
| 1 polycarbosilanes and polydiorganosilanes (for producing silicon carbide) | C | |
| 2 polysilazanes (for producing silicon nitride) | C | |
| 3 polycarbosilazines for producing ceramics with silicon, carbon and nitrogen components | C | |
| In this entry— a “matrix” means a substantially continuous phase that fills the space between particles, whiskers or fibres; a “composite” means a matrix and an additional phase or additional phases consisting of particles, whiskers, fibres or any combination thereof, present for a specific purpose or purposes. | ||
| IL1734 | Low density rigid, carbon-bonded, fibrous or non-fibrous carbon thermal insulating materials having all of the following characteristics— | C |
| a a capability of operating at temperatures greater than 2273 K (2000°C); b a density greater than 100 kg/m3 and less than 300 kg/m3; c a compressive strength greater than 0.1Mpa and less than 1.0 Mpa; d a flexural strength greater than 1.0 Mpa; and e a carbon content of greater than 99.9% of total solids. | ||
| IL1746 | Polymeric substances, the following: and manufactures thereof— | |
| a Polyimides (including maleimides) | C | |
| except in the following forms— fully cured polyimide or polyimide-based film, sheet, tape or ribbon having a maximum thickness of 0.254mm whether or not coated or laminated with heat or pressure-sensitive resinous substances of an adhesive nature, which contain no fibrous reinforcing materials and which have not been coated or laminated with carbon, graphite, metals or magnetic substances. | ||
| b Polybenzimidazoles | C | |
| c Aromatic polyamides, including heterocyclic aromatic polyamides characterised as aromatic due to the presence of a benzene ring | C | |
| except— filament yarns, staple fibres, chopped fibres, spun yarns or threads, having both of the following characteristics— a fibre modulus of 22.075 N per tex or less; and a tenacity of 0.970 N per tex or less; pulp made from materials described under exception (i) above. | ||
| d Polyabenzothiazoles | C | |
| e Polyoxadiazoles | C | |
| f Polyphosphazenes (Polyphosphonitriles) | C | |
| g Polystyrylpyridine (PSP) | C | |
| h Thermopolastic liquid crystal copolyesters, the following— | ||
| 1 ethylene copolyesters of terephthalic acid and parahydroxy-benzoic acid | C | |
| except manufactures thereof, having both of the following characteristics— a tensile modulus of less than 15 Gpa; and specially designed for non-aerospace, non-electronic civil applications; | ||
| 2 phenylene or biphenylene copolyesters of terephthalic acid and parahydroxybenzoic acid | C | |
| i Polybenzoxozoles | C | |
| j Aromatic polyether ether ketones (PEEK) | C | |
| k Butadiene polymers, the following— | ||
| 1 carboxyl terminated polybutadienes (CTPB); hydroxyl terminated polybutadienes (HTPB); thiol terminated polybutadienes (TTPB); vinyl terminated polybutadiene (VTPB) cyclised 1-2 polybutadiene | C | |
| 2 mouldable copolymers of butadiene and acrylic acids | C | |
| 3 mouldable terpolymers of butadiene, acrylonitrile, acrylic acid or any of the homologues of acrylic acid | C | |
| l Carboxyl terminated polyisoprene | C | |
| There shall be excluded from this entry manufactured articles where the value of the polymeric component together with materials specified elsewhere in this Schedule is less than 50% of the total. In this entry— “tenacity” means tensile stress expressed as force per unit linear density of the unstrained specimen, namely, Newton per tex; “fibre modulus” (secant modulus) means the ratio of change in stress to change in strain between two points on a stress-strain curve, particularly the points of zero stress and breaking stress, and is express in Newton per tex and tex is the number of grams in 1,000 metres of material. | ||
| IL1749 | Polycarbonate sheet of 1.5 mm to 25.4 mm thickness, having no major defects and having all of the following optical characteristics— | C |
| a less than 2% haze as determined by method ASTM D1003; b an angular deviation, as determined by method ASTM D637, as follows— 1 not more than 12 minutes at any location more than 25.4 mm from the edge of the sheet for sheet thickness of 1.5 mm to 9.5 mm; or 2 not more than 20 minutes at any location more than 25.4 mm from the edge of the sheet for sheet thickness over 9.5 mm to 25.4 mm; c total number of minor optical defects (excluding those within 25.4 mm of the sheet edge) as follows— 1 not exceeding 1 per 0.368 m² for sheet which is 12.7 mm or less in thickness; or 2 not exceeding 2 per 0.092 m² for sheet over 12.7 mm in thickness. | ||
| In this entry— “major defects” means variations in the material which cause angular deviations either side of the undeviated position in excess of those listed in (b) above. “Minor defects” include any embedded particles, bubbles, scratches or internal inhomogeneity with a major dimension of at least 0.250 mm, and those localized imperfections which cause a variation in angular deviation of more than 5 minutes within a distance of not more than 508 mm on the screen when tested by method ASTM D637. | ||
| IL1754 | Fluorinated compounds, materials and manufactures thereof, the following— Compounds, the following— | |
| 1 dibromotetrafluoroethane, except when having a purity of 99.8% or less and containing at least 25 particles, of 200 micrometres or larger in size per 100 ml | C | |
| 2 perfluoroalkylamines | C | |
| b Polymeric materials and intermediates, unprocessed, the following— | ||
| 1 polychlorotrifluoroethylene, oily and waxy modifications only | C | |
| except polychlorotrifluoroethylene-based lubricating oils in quantities of 19 litres or less; | ||
| 2 fluoroelastomeric compounds composed of at least 95% of a combination of two or more of the following monomers: tetrafluoroethylene, chlorotrifluoroethylene vinylidene fluoride, hexafluoropropylene, bromotrifluoroethylene, iodotrifluoroethylene, perfluoromethylvingylether and perfluoropro-poxypropylvinylether | C | |
| 3 polybromotrifluoroethylene | C | |
| 4 copolymers of vinylidene fluoride having 75% or more beta crystalline structure without stretching | C | |
| 5 fluorinated silicone rubber and intermediates for their production containing 10% or more of combined fluorine | C | |
| c Manufactures, the following— | ||
| 1 greases, lubricants and dielectric, damping and flotation fluids made of at least 85% of any of the materials specified in head (a) or (b) above | C | |
| 2 electric wire and cable coated with or insulated with any of the materials specified in sub head (b)(2) above, except oil well logging cable | C | |
| 3 seals, gaskets, rods, sheets, sealants or fuel bladders made of more than 50% of any of the materials specified in subhead (b)(2) above and specially designed for aerospace and aircraft use | C | |
| 4 piezoelectric polymers and copolymers made from vinylidene fluoride having both of the following characteristics— | C | |
| i in sheet or film form; and ii with a thickness of more than 200 micrometres. | ||
| IL1755 | Silicone fluids and greases, the following— | |
| a Fluorinated silicone fluids, except those with kinematic viscosity of 5,000 centistokes or higher measured at 25°C | C | |
| b Silicone and fluorinated silicone lubricating greases capable of operating at temperature of 478 K (205°C) or higher and having a drop point (method of test being ASTM D2265) of 493 K (220°C) or higher | C | |
| IL1757 | Compounds and materials, the following— | |
| a Monocrystalline silicon | C | |
| except— metallurgical-grade monocrystalline silicon having a purity not better than 99.97%; or monocrystalline silicon having a purity not better than 99.999% and containing at least 0.5 part in 10⁶ each of iron, carbon, boron and phosphorus, plus other impurities. | ||
| b Gallium of a purity equal to or greater than 99.9999% and gallium III/V compounds of any purity level | C | |
| except— gallium phosphide; or other gallium III/V compounds having a dislocation density (etch pit density-EPD) greater than 500,000 per cm². | ||
| c Indium of a purity greater than 99.9995% and III-V indium compounds containing more than 1% indium | C | |
| d Hetero-epitaxial materials consisting of a monocrystalline insulating substrate epitaxially layered with silicon, compounds of gallium or compounds of indium | C | |
| e Elemental Cd and Te of purity levels equal to or more than 99.9995% CdTe compounds of a purity level equal to or more than 99.99% and single crystals of CdTe of any purity level | C | |
| f Polycrystalline silicon, (except polycrystalline silicon having a purity not better than 99.99% and containing at least 0.5 part in 10⁶ each of iron, carbon, boron and phosphorus, plus other impurities) | C | |
| g SiCl₂H₂ with a purity level of 97.0 per cent or better and compounds having a purity level based upon the amount of the primary constituents of 99.5% or better and used in the synthesis of the materials specified in head (f) above, or used as the silicon source in the deposition of epitaxial layers of silicon, silicon oxide or silicon nitride | C | |
| h Single crystals sapphire substrates | C | |
| i B₂O₃ with a purity of 99.9% or greater, containing 1,000 parts per million of H₂O or less, in powder or cast form | C | |
| j Monocrystalline germanium with a resistivity greater than 100 ohm cm | C | |
| k Resist, materials, the following— | ||
| 1 negative resists whose spectral response has been adjusted for use below 350 nanometres | C | |
| 2 all positive resists | C | |
| 3 all resists for use with E-beams or ion beams with a sensitivity of 100 microcoulomb/cm² or better | C | |
| 4 all resists for use with X-rays with a sensitivity of 500 millijoules/cm² or better | C | |
| 5 all resists specified or optimized for dry development | C | |
| l Single-crystal forms of bismuth germanium oxide having piezoelectric properties and single-crystal forms of lithium niobate, of lithium tantalate and of aluminium phosphate | C | |
| m Metal-organic or hydride compounds of beryllium and magnesium (Group IIA), zinc, cadmium and mercury (Group IIB), aluminium, gallium and indium (Group IIIA), phosphorus, arsenic and antimony (Group VA) and selenium and tellurium (Group VIA) having a purity (metal basis) of 99.999% or better | C | |
| IL1759 | Syntactic foam for under water use formulated for applications at depths greater than 1000 metres or with a density of 0.561g/cm³ (specific gravity 0.561) or less | C |
| In this entry— “syntactic foam” consists of hollow plastic or glass spheres less than 100 micrometers in diameter uniformly embedded in a resin matrix | ||
| IL1760 | Tantalates and niobates having a purity of 99% or better except fluorotantalates | C |
| IL1763 | Fibrous and filamentary materials which may be used in organic matrix, metallic matrix or carbon matrix composite structures or laminates, and such composite structures and laminates and technology therefor, the following and specially ODMA software therefor— | |
| a Fibrous and filamentary materials with specific modulus greater than 3.18 × 10⁶m and specific tensile strength greater than 7.62 × 10⁴m except silicate glass fibres | C | |
| b Fibrous and filamentary materials having both of the following characteristics— | C | |
| 1 specific modulus greater than 2.54 × 10⁶m and; 2 melting or sublimation point higher than 1,992 K (1.649°C) in an inert environment; | ||
| except— carbon fibres having a specific modulus less than 5.08 × 10⁶m and a specific tensile strength less than 2.54 × 10⁴m; discontinuous, multiphase, polycrystalline alumina fibres in chopped fibre or random mat form, containing 3% by weight or more silica, having a specific modulus less than 10 × 10⁶m molybdenum and molybdenum alloy fibres; | ||
| There shall be excluded from heads (a) and (b) carbon fibres having both of the following characteristics: specific modulus less than 11.43 × 10⁶m and specific tensile strength less than 10.16 × 10⁴m. | ||
| c Resin or pitch-impregnated fibres (prepregs), metal or carbon-coated fibres (preforms) or carbon fibre preforms made with materials specified in head (a) or (b) above | C | |
| d Composite structures, laminates and manufactures thereof for products and components made either with an organic matrix, a carbon matrix or a metal matrix utilising materials specified in head (a), (b) or (c) above | C | |
| except manufactured products or composites not specified elsewhere in this Schedule. | ||
| e Technology for fibrous and filamentary materials and for composite structures and laminates, the following— | ||
| 1 technology which is unique to the spinning and subsequent treatment of precursor materials into fibres specially designed for processing into carbon filamentary materials specified in head (a) or (b) above | D | |
| 2 technology for the production of fibrous and filamentary materials specified in head (a) or (b) above | D | |
| 3 technology for the production of prepregs specified in head (c) above using pressure impregnation or chemical vapour deposition, and for preforms specified in head (c) above using vacuum or pressure impregnation of chemical vapour deposition | D | |
| 4 technology for the development and production of composite structures, laminates and manufactures specified in head (d) above | D | |
| 5 technology for rigidisation and densification processes specially designed for the manufacture of carbon-carbon composite materials, the following— | ||
| i for impregnation, infiltration or deposition into carbon fibre preforms | D | |
| ii for carbonisation | D | |
| iii for graphitisation | D | |
| iv for hot isostatic pressing | D | |
| In this entry— the term “fibrous and filamentary materials” includes: continuous monofilaments; continuous yarns and rovings; tapes, fabrics, random mats and braids; chopped fibres, staple fibres and coherent fibre blankets; whiskers, either monocrystalline or polycrystalline, of any length; “specific modulus” is Young’s modulus in pascals, equivalent to N/m² divided by specific weight in N/m3 measured at a temperature of (296 ± 2) K (23 ± 2) C) and a relative humidity of (50 ± 5)%; “specific tensile” strength is ultimate tensile strength in pascals, equivalent to N/m² divided by specific weight in N/m3 measured at a temperature of (296 ± 2) K ((23 ± 2) C) and a relative humidity of (50 ± 5)%; “carbon fibre preform” means an ordered arrangement of uncoated or coated fibres intended to constitute a framework of a part before the matrix is introduced to form a composite; “matrix” means a substantially continuous phase that fills the space between particles, whiskers or fibres; “composite” means a matrix and an additional phase or additional phases consisting of particles, whiskers, fibres or any combination thereof, present for a specific purpose or purposes. | ||
| IL1767 | Preforms of glass or of any other material specially designed for the fabrication of optical fibres specified in heads (b) or (c) in entry IL1526 in Group 3F relating to cable and wire | C |
| In this entry “optical fibre preforms” means bars, ingots, or rods of glass, plastic or other materials which have been specially processed for use in fabricating optical fibres. | ||
| IL1781 | Synthetic lubicating oils and greases which are or which contain, as their principal ingredient, the following— | |
| a Monomeric and polymeric forms of perfluorotriazines, perfluoroaromatic ethers and esters, and perfluoroaliphatic ethers and esters | C | |
| b Polyphenyl ethers or thio ethers containing more than three phenyl or alkyl phenyl groups | C | |
| PL7007 | Chemicals, the following— | |
| a Chloroethanl | W, L, I, Y | |
| b Dimethylamine | W, L, I, Y | |
| c Dimethylamine hydrochloride | W, L, I, Y | |
| d Dimethyl methylphosphate | W, L, I, Y | |
| e Dimethylphosphite | W, L, I, Y | |
| f Hydrogen fluoride | L, I, Y | |
| g Methyl phosphonyl dichloride | W, L, I, Y | |
| h Methyl phosphonyl difluoride | W, L, I, Y | |
| i Phosphorus oxychloride | W, L, I, Y | |
| j Phosphorus trichloride | W, L, I, Y | |
| k Potassium fluoride | W, L, I, Y | |
| l Thiodiglycol | W, L, I, Y | |
| m Thionyl chloride | W, L, I, Y | |
| n Trimethylphosphite | W, L, I, Y | |
| o Tris-ethanolamine | W, L, I, Y |
INDEX — MUNITION LIST—GROUP 1
| Additives, explosives | PL 5009 |
|---|---|
| Airborne equipment | ML 10 b |
| Ammunition | ML 3 |
| Amphibious vehicles | ML 6 |
| Anti-riot shields and devices | PL 5001 |
| Armoured plate | ML 13 a |
| Armoured railway trains | ML 6 |
| Armoured vehicles | ML 6 |
| Biocatalysts | ML 25 |
| Biological systems | ML 25 |
| Body armour | ML 13 d |
| Bombs | ML 4 a |
| Breathing equipment | PL 5012 |
| Bromobenzyl cyanide | ML 7 |
| Cameras, reconnaissance | ML 12 |
| Cannon | ML 2 a |
| Carbines | ML 1 a |
| Castings | ML 16 |
| Chemicals | ML 7 |
| 2-Chlorotriethylamine | ML 7 |
| Chlorovinyldichloroarsine and dichlorodivinylchloroarsine (Lewisite) | ML 7 |
| Compasses | ML 9 |
| Crash helmets | PL 5012 |
| Cryogenic equipment | ML 20 |
| Demolition charges | ML 4 a |
| Detection devices, underwater | PL 5010 |
| Depth charges | ML 4 a |
| Dibenzoxazepine | ML 7 |
| Dibromodiemthyl ether | ML 7 |
| Dichlorodiethyl sulphide | ML 7 |
| Dichlorodimethyl ether | ML 7 |
| 2:2'-Dichlorotriethylamine | ML 7 |
| Diphenylaminechloroarsine | ML 7 |
| Diphenylchloroarsine | ML 7 |
| Diphenylcyanoarsine | ML 7 |
| Directed energy weapons | ML 23 |
| Diving apparatus | ML 17 |
| Electronic equipment, military | ML 11 |
| Electrified riot control vehicles | PL 5001 |
| Environmental chambers | ML 19 |
| Ethyl NN-dimethylphosphoramidocyanidate | ML 7 |
| Ethyldibromoarsine | ML 7 |
| Ethyldichloroarsine | ML 7 |
| Explosives | PL 5009 |
| Fire bombs | ML 4 a |
| Fire control equipment | ML 5 |
| Flame throwers | ML 2 |
| Fuels | PL 5009 |
| Fuel thickeners | ML 4 c |
| Gas projectors | ML 2 b |
| Grenades | ML 4 a |
| Guns | ML 2 a |
| Gun-carriers | ML 6 |
| Half-tracks | ML 6 |
| Helmets | ML 13 c |
| Howitzers | ML 2 a |
| Image intensifiers | ML 15 |
| Imaging equipment | ML 12 |
| Incendiary bombs | ML 4 a |
| Infrared equipment | ML 12 and ML 15 |
| Large calibre armaments | ML 2 |
| Lasers | ML 23 |
| Leg irons | PL 5001 |
| Lewisite | ML 7 |
| Machine guns | ML 1 a |
| Machine pistols | ML 1 a |
| Methyldichloroarsine | ML 7 |
| Microwave weapon systems | ML 23 |
| Military aircraft | ML 10 a |
| Military helicopters | ML 10 a |
| Mines | ML 4 a |
| Missiles, guided or unguided | ML 4 a |
| Mobile repair shops | ML 6 |
| MonoChloromethylchloroformate | ML 7 |
| Mortars | ML 2 a |
| Mustard gas | ML 7 |
| Naval equipment | ML 9 |
| oChlorobenzylidenealononitrile (oChlorobenzalmalononitrile) | ML 7 |
| Parachutes | PL 5012 |
| Particle beam systems | ML 23 |
| Phenylcarbylamine chloride (phenylaminocarbonyl chloride) | ML 7 |
| Phenylacyl chloride (w-Chloroacetophenone) | ML 7 |
| Phenyldibromarsine | ML 7 |
| Phenyldichloroarsine | ML 7 |
| Photographic equipment | ML 12 |
| Pinacolyl methylphosphonofluoridate | ML 7 |
| Pistols | ML 1 a |
| Precursors, explosives | PL 5009 |
| Pressure suits | PL 5012 |
| Production equipment, military | ML 18 |
| Production technology, military | ML 18 |
| Projectile launchers | ML 2 a |
| Propellants | PL 5009 |
| IsoPropyl methylphosphonofluoridate | ML 7 |
| Pyrotechnics | PL 5009 |
| Pyrotechnic flare signals | ML 4 a |
| Pyrotechnic projectors | ML 2 b |
| Range finders | ML 5 |
| Recoilless rifles | ML 2 a |
| Recovery vehicles | ML 6 |
| Refuelling | ML 10 c |
| Revolvers | ML 1 a |
| Rifles | ML 1 a |
| Riot control equipment | PL 5001 |
| Riot control vehicles, electrified | PL 5001 |
| Rockets | ML 4 a |
| Rocket launchers | ML 2 a |
| Searchlights | ML 17 c |
| Self-propelled guns | ML 6 |
| Shackles | PL 5001 |
| Shutters, electronically triggered | ML 22 |
| Silencers, firearm | ML 17 b |
| Smoke canisters | ML 4 a |
| Smoke grenades | ML 4 a |
| Smoke projectors | ML 2 b |
| Small arms | ML 1 |
| Smooth bore weapons | ML 1 |
| Software | ML 24 |
| Stabilisers, explosives | PL 5009 |
| Submarines | ML 9 |
| Submarine nets | ML 9 |
| Superconductive equipment | ML 20 |
| Surface vessels | ML 9 |
| Tanks | ML 6 |
| Tank destroyers | ML 2 a |
| Tear gas | ML 7 |
| Telescopic sights | PL 5002 |
| Thermal imaging equipment | ML 15 |
| Torpedoes | ML 4 a |
| Torpedo nets | ML 9 |
| Toxicological agents | ML 7 |
| Trailings, ammunition | ML 6 |
| Training equipment | ML 14 |
| 2:2':2" Trichlorotriethylamine | ML 7 |
| Underwater swimming apparatus | ML 17 a |
| Underwater vessels | ML 9 |
| Vehicles | ML 6 |
| Vessels | ML 9 |
| Water cannon | PL 5001 |
SCHEDULE 2
List of countries referred to in Article 2:–
- Afghanistan
- Albania
- Bulgaria
- China
- Czechoslovakia
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