Legalize / United Kingdom / Statutory-Instrument

The Export of Goods (Control) Order 1992

Type Statutory-Instrument

Publication 1992-12-08

State In force

Department Queen's Printer of Acts of Parliament

Source legislation.gov.uk

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Reform history JSON API

Assemblies, units or inserts specially designed for machine tools, or for equipment specified in entries 2B006 or 2B007, as follows:

(a) Spindle assemblies, consisting of spindles and bearings as a minimal assembly, with radial (run out) or axial (camming) axis motion in one revolution of the spindle less (better) than 0·0006mm TIR;

(b) Linear position feedback units (e.g.,inductive type devices, graduated scales, infrared systems or laser systems) having an overall accuracy less (better) than(800 + (600 × L × 10−³)) nm (L equals the effective length in mm);

(c) Rotary position feedback units, e.g.,inductive type devices, graduated scales, infrared systems or laser systems, having an accuracy less (better) than 0·00025°;

(d) Slide way assemblies consisting of a minimal assembly of ways, bed and slide having all of the following characteristics:

A yaw, pitch or roll of less (better) than 2 seconds of arc TIR over full travel;

A horizontal straightness of less (better) than 2 micrometre per 300mm length; and

A vertical straightness of less (better) than 2 micrometre per 300mm length;

(e) Single point diamond cutting tool inserts, having all of the following characteristics:

Flawless and chip—free cutting edge when magnified 400 times in any direction;

Cutting radius from 0·1 to 5mm inclusive; and

Cutting radius out—of—roundness less (better) than 0·002mm TIR.

2B009

Specially designed printed circuit boards with mounted components and software therefor, or compound rotary tables or tilting spindles, capable of upgrading, according to the manufacturer’s specifications, numerical control units, machine tools or feed—back devices to or above the levels specified in entries 2B001 to 2B008.

2B104

Equipment and process controls designed or modified for densification and pyrolysis of structural composite rocket nozzles and reentry vehicle nose tips.

2B115

Flow—forming machines, and specially designed components therefor[^f00029], which:

(a) According to the manufacturer’s technical specification, can be equipped with numerical control units or a computer control, even when not equipped with such units; and

(b) With more than two axes which can be coordinated simultaneously for contouring control.

Technical Note: Machines combining the function of spin—forming and flow—forming are for the purpose of this entry regarded as flow—forming machines.

2B116

Vibration test equipment using digital control techniques, and feedback or closed loop test equipment therefor, capable of vibrating a system at 10g RMS or more between 20Hz and 2000Hz and imparting forces of 50kN or greater.

2B204

Isostatic presses, other than those specified in entries 2B004 or 2B104, capable of achieving a maximum working pressure of 69MPa or greater and having a chamber cavity with an inside diameter in excess of 152mm and specially designed dies, moulds and controls therefor.

2B207

Robots and end—effectors, other than those specified in entry 2B007, specially designed to comply with national safety standards applicable to handling high explosives (for example, meeting electrical code ratings for high explosives) and specially designed controllers therefor.

2B215

Spin—forming and flow—forming machines, other than those specified in entry 2B115, and precision rotor—forming mandrels designed to form cylindrical rotors of inside diameter between 75mm and 400mm therefor, which:

(a) According to the manufacturer’s technical specification, can be equipped with numerical control units or a computer control; and

(b) With two or more axes that can be coordinated simultaneously for contouring control.

Technical Note: The only spin—forming machines specified in this entry are those combining the function of spin—forming and flow—forming.

2B225

Remote manipulators that provide mechanical translation of human operator actions by electrical, hydraulic or mechanical means to an operating arm and terminal fixture that can be used to provide remote actions in radiochemical separation operations and hot cells, as follows:

(a) Having a capability of penetrating 0·6m or more of cell wall; or

(b) Having a capability to bridge over the top of a cell wall with a thickness of 0·6m or more.

2B226

Vacuum or controlled environment (inert gas) induction furnaces capable of operating above 1,123K (850°C) and having induction coils 600mm or less in diameter and specially designed power supplies therefor with an output rating of 5kW or more[^f00030].

2B227

Vacuum and controlled atmosphere metallurgical melting and casting furnaces as follows; and specially configured computer control and monitoring systems therefor:

(a) Arc remelt and casting furnaces with consumable electrode capacities between 1000cm³ and 20,000cm³, capable of operating with melting temperatures above 1973K (1700°C);

(b) Electron beam melting and plasma atomization and melting furnaces, with a power of 50kW or greater, capable of operating with melting temperatures above 1473K (1200°C).

2B228

Rotor fabrication and assembly equipment and bellows—forming mandrels and dies, as follows:

(a) Rotor assembly equipment for assembly of gas centrifuge rotor tube sections, baffles and end caps, including associated precision mandrels, clamps and shrink fit machines.

(b) Rotor straightening equipment for alignment of gas centrifuge rotor tube sections to a common axis.

Technical Note: Normally such equipment will consist of precision measuring probes linked to a computer that subsequently controls the action of, for example, pneumatic rams used for aligning the rotor tube sections.

(c) Bellows—forming mandrels and dies for producing single—convolution bellows (bellows made of high—strength aluminium alloys, maraging steel or high strength filamentary materials). The bellows have all of the following dimensions:

75mm to 400mm inside diameter;

12·7mm or more in length; and

Single convolution depth more than 2mm.

2B229

Centrifugal multiplane balancing machines, fixed or portable, horizontal or vertical, as follows:

(a) Centrifugal balancing machines designed for balancing flexible rotors having a length of 600mm or more and having all of the following characteristics:

A swing or journal diameter of 75mm or more;

Mass capability of from 0·9 to 23kg; and

Capable of balancing speed of revolution more than 5000rpm;

(b) Centrifugal balancing machines designed for balancing hollow cylindrical rotor components and having all of the following characteristics:

A journal diameter of 75mm or more;

Mass capability of from 0·9 to 23kg;

Capable of balancing to a residual imbalance of 0·01kg mm/kg per plane or better; and

Belt drive type.

2B230

Instruments capable of measuring pressures up to 13kPa to an accuracy of better than 1% (full—scale), with corrosion—resistant pressure—sensing elements constructed of nickel, nickel alloys, phosphor bronze, stainless steel, aluminium or aluminium alloys.

2B231

Vacuum pumps with an input throat size of 380mm or greater with a pumping speedof 15,000 litres/s or greater and capable of producing an ultimate vacuum better than13 mPa.

2B232

Multistage light gas gun or other high—velocity gun systems (coil, electromagnetic, electrothermal or other advanced systems) capable of accelerating projectiles to 2km/s or greater.

2B350

Chemical manufacturing facilities and equipment, as follows:

(a) Reactor vessels, with or without agitators, with a total volume greater than 0·1m³ and less than 15m³;

(b) Storage tanks and containers, with a total volume greater than 0·1m³;

(d) Distillation columns of diameter greater than 0·1m;

(e) Condensers;

(f) Degassing equipment;

Note: Heads a. to f. of this entry are only specified when all surfaces that come in direct contact with the chemical(s) being processed or contained are made from any of the following:

Nickel or alloys with more than 40% nickel by weight;

Alloys with more than 25% nickel and 20% chromium by weight;

Glass; or

Graphite (for heat exchangers only).

(g) Remotely operated filling equipment in which all surfaces that come in direct contact with the fluid are made from any of the following materials:

Nickel or alloys with more than 40% nickel by weight; or

Alloys with more than 25% nickel and 20% chromium by weight;

(h) Bellows valves, diaphragm valves or double seal valves incorporating a leak detection port, and multi—walled piping incorporating a leak detection port, in which all surfaces that come in direct contact with the fluids are made from the following materials:

Nickel or alloys with more than 40% nickel by weight;

Alloys with more than 25% nickel and 20% chromium by weight; or

Fluoropolymers including PTFE, PVDF, PFA;

(i) Double—seal, canned drive, magnetic drive, bellows or diaphragm pumps in which all surfaces that come in direct contact with the fluid are made from the following materials:

Nickel or alloys with more than 40% nickel by weight;

Alloys with more than 25% nickel and 20% chromium by weight;

Fluoropolymers including PTFE, PVDF, PFA; or

Tantalum;

(j) Incinerators designed to destroy chemicals specified in entry 1C350, with special handling facilities, with an average combustion chamber temperature greater than 1273K (1000°C), in which all surfaces in the waste supply system that come into direct contact with the waste products are made from or lined with the following materials:

Nickel or alloys with more than 40% nickel by weight;

Alloys with more than 25% nickel and 20% chromium by weight; or

Ceramics.

2B351

Toxic gas monitoring systems, with the following characteristics:

(a) Capable of detecting chemical warfare agents and chemicals specified in entry 1C350 as well as phosphorus, sulphur, fluorine, chlorine or their compounds, at a concentration of less than 0·3mg/m³ of air and capable of continuous operation; or

(b) Capable of detecting compounds having an anticholinesterase function.

2B352

Equipment capable of use in biological manufacturing, as follows;

(a) Containment facilities at Containment Level (ACDP) 3 or 4, and related equipment, as follows:

Facilities that meet the criteria for Containment Level 3 or 4 as specified in guidance from the Advisory Committee on Dangerous Pathogens approved by the Health and Safety Commission (published by HMSO, Second Edition 1990); Note: The criteria for Containment Level 3 or 4 in head a.of this entry are equivalent to the criteria for P3 or P4, BL3 or BL4, L3 or L4 containment as specified in the WHO Laboratory Biosafety manual (Geneva, 1983).

Independently ventilated protective full or half suits;

Biological safety cabinets or isolators, which allow manual operations to be performed within, whilst providing an environment equivalent to Class III biological protection; Note: In this entry, isolators include flexible isolators, dry boxes, anaerobic chambers and glove boxes.

(b) Fermenters, bioreactors, chemostats and continuous—flow systems, capable of operation without the propagation of aerosols, having all the following characteristics:

Capacity of 300 litres or more;

Double or multiple sealing joints within the steam containment area; and

Capable of in—situ sterilisation in a closed state;

(c) Centrifugal separators or decanters, capable of continuous separation without the propagation of aerosols, having all the following characteristics:

Flow rate exceeding 100 litres per hour;

Components of polished stainless steel or titanium;

Double or multiple sealing joints within the steam containment area; and

Capable of in—situ sterilisation in a closed state;

(d) Cross—flow filtration equipment, designed for continuous separation without the propagation of aerosols, having both of the following characteristics:

Equal to or greater than 5 square metres; and

Capable of in—situ sterilisation;

(e) Steam sterilisable freeze drying equipment with a condenser capacity exceeding 50 kg of ice in 24 hours and less than 1,000 kg of ice in 24 hours;

(f) Chambers designed for aerosol challenge testing with pathogenic microorganisms or toxins and having a capacity of 1 m³ or greater.

Materials

2C

None.

Software

2D

2D001

Software specially designed or modified for the development, production or use of goods specified in entries 2A001 to 2A007 or 2B001 to 2B009.

2D002

Specific software, as follows:

(a) Software to provide adaptive control and having both of the following characteristics:

For flexible manufacturing units (FMUs) which consist at least of equipment described in b.1. and b.2. of the definition of flexible manufacturing unit; and

Capable of generating or modifying, in real time processing, programmes or data by using the signals obtained simultaneously by means of at least two detection techniques, such as: Machine vision (optical ranging); Infrared imaging; Acoustical imaging (acoustical ranging); Tactile measurement; Inertial positioning; Force measurement; Torque measurement; Note: Head a. of this entry does not specify software which only provides rescheduling of functionally identical equipment within flexible manufacturing units using pre—stored part programmes and a pre—stored strategy for the distribution of the part programmes.

(b) Software for electronic devices other than those described in heads a. or .b of entry 2B001, which provides the numerical control capability of the goods specified in entry 2B001.

Note: Entry 2B001 and this entry specify any combination of electronic devices or systems that collectively contain software enabling such devices or systems to function as a numerical control unit capable of coordinating simultaneously more than 4 axes for contouring control.

2D101

Software specially designed for the use of goods specified in entries 2B104, 2B115 or 2B116[^f00031].

2D201

Software specially designed for the use of goods specified in entries 2B204, 2B207, 2B215, 2B227 or 2B229.

Technology

2E

2E001

Technology required for the development of goods specified in sub—categories 2A, 2B or 2D.

2E002

Technology required for the production of goods specified in sub—categories 2A or 2B.

2E003

The export of goods specified in this entry is only prohibited to any destination in any country listed in Schedule 2.

Table—Deposition Techniques—Notes

(1) The term `coating process' includes coating repair and refurbishing as well as original coating.

(2) The term `alloyed aluminide coating' includes single or multiple—step coatings in which an element or elements are deposited prior to or during application of the aluminide coating, even if these elements are deposited by another coating process. It does not, however, include the multiple use of single—step pack cementation processes to achieve alloyed aluminides.

3

The term `noble metal modified aluminide' coating includes multiple—step coatings in which the noble metal or noble metals are laid down by some other coating process prior to application of the aluminide coating.

4

Mixtures consist of infiltrated material, graded compositions, co—deposits and multilayer deposits and are obtained by one or more of the coating processes specified in the Table.

5

MCrAlX refers to a coating alloy where M equals cobalt, iron, nickel or combinations thereof and X equals hafnium, yttrium, silicon, tantalum in any amount or other intentional additions over 0·01 weight percent in various proportions and combinations; except:

(a) CoCrAlY coatings which contain less than 22 weight percent of chromium, less than 7 weight percent of aluminium and less than 2 weight percent of yttrium;

(b) CoCrAlY coatings which contain 22 to 24 weight percent of chromium, 10 to 12 weight percent of aluminium and 0·5 to 0·7 weight percent of yttrium; or

(c) NiCrAlY coatings which contain 21 to 23 weight percent of chromium, 10 to 12 weight percent of aluminium and 0·9 to 1·1 weight percent of yttrium.

6

The term `aluminium alloys' refers to alloys having an ultimate tensile strength of 190MPa or more measured at 293K (20°C).

7

The term `corrosion resistant steel' refers to AISI (American Iron and Steel Institute) 300 series or equivalent national standard steels.

8

Refractory metals consist of the following metals and their alloys: niobium (columbium), molybdenum, tungsten and tantalum.

9

Sensor window materials, as follows: alumina, silicon, germanium, zinc sulphide, zinc selenide, gallium arsenide and the following metal halides: potassium iodide, potassium fluoride, or sensor window materials of more than 40mm diameter for thallium bromide and thallium chlorobromide.

10

Technology for single—step pack cementation of solid airfoils is not specified in Category 2.

(11) Polymers, as follows: polyimide, polyester, polysulphide, polycarbonates and polyurethanes.

(12) Modified zirconia refers to additions of other metal oxides, e.g., calcia, magnesia, yttria, hafnia, rare earth oxides, etc, to zirconia in order to stabilise certain crystallographic phases and phase compositions. Thermal barrier coatings made of zirconia, modified with calcia or magnesia by mixing or fusion, are not controlled.

(13) Titanium alloys refers to aerospace alloys having an ultimate tensile strength of 900 MPa or more measured at 293K (20°C).

(14) Low—expansion glasses refers to glasses which have a coefficient of thermal expansion of 1×10⁷− K¹− or less measured at 293K (20°C).

(15) Dielectric layers are coatings constructed of multi—layers of insulator materials in which the interference properties of a design composed of materials of various refractive indices are used to reflect, transmit or absorb various wavelength bands. Dielectric layers refers to more than four dielectric layers or dielectric/metal composite layers.

(16) Cemented tungsten carbide does not include cutting and forming tool materials consisting of tungsten carbide/(cobalt, nickel), titanium carbide/(cobalt, nickel), chromium carbide/nickel—chromium and chromium carbide/nickel.

Table—Deposition Techniques—Technical Note

Processes specified in Column 1 of the Table are defined as follows:

(a) Chemical Vapour Deposition (CVD) is an overlay coating or surface modification coating process wherein a metal, alloy, composite, dielectric or ceramic is deposited upon a heated substrate. Gaseous reactants are decomposed or combined in the vicinity of a substrate resulting in the deposition of the desired elemental, alloy or compound material on the substrate.

Energy for this decomposition or chemical reaction process may be provided by the heat of the substrate, a glow discharge plasma, or laser irradiation.

Notes:

CVD includes the following processes: directed gas flow out—of—pack deposition, pulsating CVD, controlled nucleation thermal decomposition (CNTD), plasma enhanced or plasma assisted CVD processes.

Pack denotes a substrate immersed in a powder mixture.

The gaseous reactants used in the out—of—pack process are produced using the same basic reactions and parameters as the pack cementation process, except: that the substrate to be coated is not in contact with the powder mixture.

(b) Thermal Evaporation—Physical Vapour Deposition (TE—PVD) is an overlay coating process conducted in a vacuum with a pressure less than 0·1Pa wherein a source of thermal energy is used to vaporize the coating material. This process results in the condensation, or deposition, of the evaporated species onto appropriately positioned substrates.

The addition of gases to the vacuum chamber during the coating process to synthesize compound coatings is an ordinary modification of the process.

The use of ion or electron beams, or plasma, to activate or assist the coating’s deposition is also a common modification in this technique. The use of monitors to provide in—process measurement of optical characteristics and thickness of coatings can be a feature of these processes.

Specific TE—PVD processes are as follows:

Electron beam PVD uses an electron beam to heat and evaporate the material which forms the coating;

Resistive heating PVD employs electrically resistive heating sources capable of producing a controlled and uniform flux of evaporated coating species;

Laser evaporation uses either pulsed or continuous wave laser beams to heat the material which forms the coating;

Cathodic arc deposition employs a consumable cathode of the material which forms the coating and has an arc discharge established on the surface by a momentary contact of a ground trigger. Controlled motion of arcing erodes the cathode surface creating a highly ionized plasma. The anode can be either a cone attached to the periphery of the cathode, through an insulator, or the chamber. Substrate biasing is used for non line—of—sight deposition. Note: This definition does not include random cathodic arc deposition with non—biased substrates.

(c) Ion plating is a special modification of a general TE—PVD process in which a plasma or an ion source is used to ionize the species to be deposited, and a negative bias is applied to the substrate in order to facilitate the extraction of the species to be deposited from the plasma. The introduction of reactive species, evaporation of solids within the process chamber, and the use of monitors to provide in—process measurement of optical characteristics and thicknesses of coatings are ordinary modifications of the process.

(d) Pack cementation is a surface modification coating or overlay coating process wherein a substrate is immersed in a powder mixture (a pack), that consists of:

The metallic powders that are to be deposited (usually aluminium, chromium, silicon or combinations thereof);

An activator (normally a halide salt); and

An inert powder, most frequently alumina. The substrate and powder mixture is contained within a retort which is heated to between 1,030K (757°C) and 1,375K (1,102°C) for sufficient time to deposit the coating.

(e) Plasma spraying is an overlay coating process wherein a gun (spray torch) which produces and controls a plasma accepts powder or wire coating materials, melts them and propels them towards a substrate, whereon an integrally bonded coating is formed. Plasma spraying constitutes either low pressure plasma spraying or high velocity plasma spraying carried out underwater.

Notes:

Low pressure means less than ambient atmospheric pressure.

High velocity refers to nozzle—exit gas velocity exceeding 750m/s calculated at 293K (20°C) at 0·1MPa.

(e) Slurry deposition is a surface modification coating or overlay coating process wherein a metallic or ceramic powder with an organic binder is suspended in a liquid and is applied to a substrate by either spraying, dipping or painting, subsequent air or oven drying, and heat treatment to obtain the desired coating.

(g) Sputter deposition is an overlay coating process based on a momentum transfer phenomenon, wherein positive ions are accelerated by an electric field towards the surface of a target (coating material). The kinetic energy of the impacting ions is sufficient to cause target surface atoms to be released and deposited on an appropriately positioned substrate.

Notes:

The Table refers only to triode, magnetron or reactive sputter deposition which is used to increase adhesion of the coating and rate of deposition and to radio frequency (RF) augmented sputter deposition used to permit vapourisation of non—metallic coating materials.

Low—energy ion beams (less than 5 keV) can be used to activate the deposition.

(h) Ion implantation is a surface modification coating process in which the element to be alloyed is ionized, accelerated through a potential gradient and implanted into the surface region of the substrate. This includes processes in which ion implantation is performed simultaneously with electron beam physical vapour deposition or sputter deposition.

2E101

Technology required for the use of equipment or software specified in entries 2B004, 2B104, 2B115, 2B116 or 2D101.

2E201

Technology required for the use of equipment or software specified in entries 2A225, 2A226, 2B001, 2B006, head b. of entry 2B007, head c. of entry 2B007, or entries 2B008, 2B009, 2B204, 2B207, 2B215, 2B225 to 2B232 or 2D201.

Equipment, Assemblies and Components

3A

Notes:

1

For equipment, devices and components described in sub—category 3A, other than those described in sub—heads a.3. to a.10. of this entry, which are specially designed for, or which have the same functional characteristics as other equipment, refer to the entry that specifies such equipment.

2

For integrated circuits described in sub—heads a.3. to a.9. of this entry, which are unalterably programmed or designed for a specific function, refer to the entry that specifies equipment with that function.

3A001

Electronic devices and components:

(a) General purpose integrated circuits, as follows:

Notes:

Wafers (finished or unfinished), in which the function has been determined, are evaluated against the parameters of this head.

Integrated circuits include the following types: Monolithic integrated circuits; Hybrid integrated circuits; Multichip integrated circuits; Film type integrated circuits, including silicon—on—sapphireintegrated circuits; Optical integrated circuits.

Integrated circuits, designed or rated as radiation hardened to withstand a total dose of 5×10⁵ rad (Si), or higher;

Note: For integrated circuits designed or rated against neutron or transient ionising radiation, see Group 1 of Part III of this Schedule.

Integrated circuits described in sub—heads a.3. to a.10. of this entry, rated for operation at an ambient temperature below 219 K (−54°C) or above 398 K (125°C);

Note: Sub—head a.2. of this entry does not apply to integrated circuits for civil automobiles or railway engines.

Microprocessor microcircuits, microcomputer microcircuits and microcontroller microcircuits, having any of the following: Notes: Sub—head a.3. of this entry does not specify silicon—based microcomputer microcircuits or microcontroller microcircuits having an operand (data) word length of 8 bits or less and not covered by Note 2 to 3A. Sub—head a.3. of this entry includes digital signal processors, digital array processors and digital coprocessors.

(a) An external data bus width exceeding 32 bit or an arithmetic logic unit with an access width exceeding 32 bit;

(b) A clock frequency exceeding 40 MHz;

(c) An external data bus width of 32 bit or more and capable of executing 12·5 million instructions per second (MIPS) or more; or

Technical Note: If MIPS are not specified, the inverse of the average instruction cycle time (in microseconds) should be used.

(d) More than one data or instruction bus or serial communication port for external interconnection in a parallel processor with a transfer rate exceeding 2·4 Mbyte/s;

4

Storage integrated circuits, as follows:

(a) Electrical erasable programmable read—only memories (EEPROMs) with a storage capacity:

(1) Exceeding 1 Mbit per package; or

(2) Exceeding 256 kbit per package and a maximum access time of less than 80 ns;

(b) Static random—access memories (SRAMs) with a storage capacity:

(1) Exceeding 1 Mbit per package; or

(2) Exceeding 256 kbit per package and a maximum access time of less than 25 ns;

5

Converter integrated circuits, as follows:

(a) Analogue—to—digital converters having any of the following:

(1) A resolution of 8 bit or more, but less than 12 bit, with a total conversion time to maximum resolution of less than 10 ns;

(2) A resolution of 12 bit with a total conversion time to maximum resolution of less than 200 ns; or

(3) A resolution of more than 12 bit with a total conversion time to maximum resolution of less than 2 microseconds;

(b) Digital—to—analogue converters with a resolution of 12 bit or more, and a settling time of less than 10 ns;

6

Electro—optical or optical integrated circuits for signal processing having all of the following:

(a) One or more internal laser diodes;

(b) One or more internal light detecting elements; and

7

Field programmable gate arrays having either of the following:

(a) An equivalent gate count of more than 30,000 (2 input gates); or

(b) A typical basic gate propagation delay time of less than 0·4 ns;

8

Field programmable logic arrays having either of the following:

(a) An equivalent gate count of more than 5,000 (2 input gates); or

(b) A toggle frequency exceeding 100 MHz;

9

Neural network integrated circuits;

10

Custom integrated circuits, for which either the function is unknown, or the control status of the equipment in which the integrated circuit will be used is unknown, having any of the following:

(a) More than 144 terminals;

(b) A typical basic gate propagation delay time of less than 0·4 ns; or

11

Digital integrated circuits, other than those described in sub—heads a.3. to a.10. of this entry, based upon any compound semiconductor and having either of the following:

(a) An equivalent gate count of more than 300 (2 input gates); or

(b) A toggle frequency exceeding 1·2 GHz;

(b) Microwave or millimetre wave devices:

(1) Electronic vacuum tubes and cathodes, as follows:

Notes:

(1) For frequency agile tubes, see entry ML11 in Group 1 ofPart III of this Schedule.

(2) Sub—head b.1. of this entry does not specify tubes designed or rated to operate in the Standard Civil Telecommunications Bands at frequencies not exceeding 31 GHz.

(a) Travelling wave tubes, pulsed or continuous wave, as follows:

(1) Operating at frequencies higher than 31 GHz;

(2) Having a cathode heater element with a turn on time to rated RF power of less than 3 seconds;

(3) Coupled cavity tubes, or derivatives thereof;

(4) Helix tubes, or derivatives thereof, with any of the following:

(1) An instantaneous bandwidth of half an octave or more; and

(2) The product of the rated average output power (expressed in kW) and the maximum operating frequency (expressed in GHz) of more than 0·2;

(1) An instantaneous bandwidth of less than half an octave; and

(2) The product of the rated average output power (expressed in kW) and the maximum operating frequency (expressed in GHz) of more than 0·4; or

(b) Crossed—field amplifier tubes with a gain of more than 17 dB;

(1) Having a turn on time to rated emission of less than 3 seconds; or

(2) Producing a continuous emission current density at rated operating conditions exceeding 5 A/cm²;

2

Microwave integrated circuits or modules containing monolithic integrated circuits operating at frequencies exceeding 3 GHz;

3

Microwave transistors rated for operation at frequencies exceeding 31 GHz;

4

Microwave solid state amplifiers, as follows:

(a) Operating at frequencies exceeding 10·5 GHz and having an instantaneous bandwidth of more than half an octave;

(b) Operating at frequencies exceeding 31 GHz;

Note: Sub—head b.4. of this entry does not specify amplifiers:

(1) Specially designed for medical applications;

(2) Specially designed for use in simple educational devices; or

(3) Having an output power of no more than 10 W and specially designed for:

(a) Industrial or civilian intrusion, detection and alarm systems;

(b) Traffic or industrial movement control and counting systems; or

(5) Electronically or magnetically tunable band—pass or band—stop filters having more than 5 tunable resonators capable of tuning across a 1.5:1 frequency band (fmax;/f') in less than 10 microseconds with:

(a) A band—pass bandwidth of more than 0·5% of centre frequency; or

(b) A band—stop bandwidth of less than 0·5% of centre frequency;

(6) Microwave assemblies capable of operating at frequencies exceeding 31 GHz;

(7) Flexible waveguides designed for use at frequencies exceeding 40 GHz;

(1) Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices (i.e., signal processing devices employing elastic waves in materials), having either of the following:

Note: Sub—head c.1. of this entry does not specify devices specially designed for home electronics or entertainment.

(a) A carrier frequency exceeding 1 GHz; or

(b) A carrier frequency of 1 GHz or less, and:

(1) A frequency side—lobe rejection exceeding 55 dB;

(2) A product of the maximum delay time and the bandwidth (time in microseconds and bandwidth in MHz) of more than 100; or

(3) A dispersive delay of more than 10 microseconds;

2

Bulk (volume) acoustic wave devices (i.e., signal processing devices employing elastic waves) which permit direct processing of signals at frequencies exceeding 1 GHz;

3

Acoustic—optic signal processing devices employing interaction between acoustic waves (bulk wave or surface wave) and light waves which permit the direct processing of signals or images, including spectral analysis, correlation or convolution;

2

High energy storage capacitors, as follows[^f00032]:

(a) Capacitors with a repetition rate of less than 10Hz (single shot capacitors) having all of the following:

(1) A voltage rating equal to or more than 5kV;

(2) An energy density equal to or more than 250J/kg; and

(3) A total energy equal to or more than 25kJ;

(b) Capacitors with a repetition rate of 10Hz or more (repetition rated capacitors) having all of the following:

(1) A voltage rating equal to or more than 5kV;

(2) An energy density equal to or more than 50J/kg;

(3) A total energy equal to or more than 100J; and

(4) A charge/discharge cycle life equal to or more than 10,000;

3

Superconductive electromagnets or solenoids specially designed to be fully charged or discharged in less than one minute, having all of the following[^f00033]:

(a) Maximum energy delivered during the discharge divided by the duration of the discharge of more than 500kJ per minute;

(b) Inner diameter of the current carrying windings of more than 250mm; and

Note: Sub—head e.3. of this entry does not specify superconductive electromagnets or solenoids specially designed for Magnetic Resonance Imaging (MRI) medical equipment.

4

Circuits or systems for electromagnetic energy storage, containing components manufactured from superconductive materials specially designed for operation at temperatures below the critical temperature of at least one of their superconductive constituents, having all of the following:

(a) Resonant operating frequencies exceeding 1MHz;

(b) A stored energy density of 1MJ/m³ or more; and

5

Flash discharge type X—ray systems, including tubes, having all of the following[^f00034]:

(a) A peak power exceeding 500MW;

(b) An output voltage exceeding 500kV; and

(e) Rotary input type shaft absolute position encoders having either of the following:

(1) A resolution of better than 1 part in 265,000 (18 bit resolution) of full scale; or

(2) An accuracy better than ±2·5 seconds of arc.

3A002

General purpose electronic equipment:

(a) Recording equipment, as follows, and specially designed test tape therefor:

Analogue instrumentation magnetic tape recorders, including those permitting the recording of digital signals (e.g.,using a high density digital recording (HDDR) module), having any of the following: A bandwidth exceeding 4MHz per electronic channel or track; A bandwidth exceeding 2MHz per electronic channel or track and having more than 42 tracks; or A time displacement (base) error, measured in accordance with applicable Inter Range Instrumentation Group (IRIG) or Electronic Industries Association (EIA) documents, of less than ±0·1 microsecond;

Digital video magnetic tape recorders having a maximum digital interface transfer rate exceeding 180Mbit/s, except: those specially designed for television recording as standardized or recommended by the International Radio Consultative Committee (CCIR) or the International Technical Commission (IEC) for civil television applications;

Digital instrumentation magnetic tape data recorders having any of the following characteristics: A maximum digital interface transfer rate exceeding 60Mbit/s and employing helical scan techniques; A maximum digital interface transfer rate exceeding 120Mbit/s and employing fixed head techniques; or Space qualified; Note: Sub—head a.3. of this entry does not specify analogue magnetic tape recorders equipped with HDDR conversion electronics and configured to record only digital data.

Equipment, with a maximum digital interface transfer rate exceeding 60Mbit/s, designed to convert digital video magnetic tape recorders for use as digital instrumentation data recorders;

(b) Frequency synthesiser electronic assemblies having a frequency switching time from one selected frequency to another of less than 1ms;

Capable of analysing frequencies exceeding 31GHz;

Dynamic signal analysers with a real—time bandwidth exceeding 25·6kHz; except: Those using only constant percentage bandwidth filters (also known as octave or fractional octave filters);

(d) Frequency synthesised signal generators producing output frequencies, the accuracy and short term and long term stability of which are controlled, derived from or disciplined by the internal master frequency, and having any of the following:

A maximum synthesised frequency exceeding 31GHz;

A frequency switching time from one selected frequency to another of less than 1ms; or

A single sideband (SSB) phase noise better than −(126 + 20 log₁₀F − 20 log₁₀f) in dBc/Hz, where F is the off—set from the operating frequency in Hz and f is the operating frequency in MHz; Note: Head d. of this entry does not specify equipment in which the output frequency is either produced by the addition or subtraction of two or more crystal oscillator frequencies, or by an addition or subtraction followed by a multiplication of the result.

(e) Network analysers with a maximum operating frequency exceeding 31GHz;

Note: Head e. of this entry does not specify swept frequency network analysers with a maximum operating frequency not exceeding 40GHz and which do not contain a data bus for remote control interfacing.

(f) Microwave test receivers with both of the following:

A maximum operating frequency exceeding 31GHz; and

Capable of measuring amplitude and phase simultaneously;

(g) Atomic frequency standards having either of the following characteristics:

Long term stability (aging) less (better) than 1 x 10¹¹−/month; or Note: Sub—head g.1. of this entry does not specify non—space qualified rubidium standards.

Space qualified;

(h) Emulators for microcircuits specified in sub—heads a.3. or a.9. of entry 3A001;

Note: Head h. of this entry does not specify emulators designed for a family which contains at least one device not specified in sub—heads a.3. or a.9. of entry 3A001.

3A101

Electronic devices and components, other than those specified in entry 3A001, as follows:

(a) Analogue—to—digital converters, usable in missiles, designed to meet military specifications for ruggedized equipment.

(b) Radiographic equipment, as follows:

Equipment capable of delivering electromagnetic radiation produced by bremsstrahlung from accelerated electrons of 2MeV or greater; or

Equipment using radioactive sources of 1MeV or greater. Note: Head b. of this entry does not specify equipment specially designed for medical purposes.

3A201

Electronic components, other than those specified in entry 3A001, as follows:

(a) Capacitors with the following characteristics:

Voltage rating greater than 1·4kV, energy storage greater than 10J, capacitance greater than 0·5μF and series inductance less than 50nH; or

Voltage rating greater than 750V, capacitance greater than 0·25μF and series inductance less than 10nH;

(b) Superconducting solenoidal electromagnets with all of the following characteristics:

Capable of creating magnetic fields of more than 2 teslas (20 kilogauss);

With an L/D ratio (length divided by inner diameter) greater than 2;

With an inner diameter of more than 300mm; and

With a magnetic field uniform to better than 1% over the central 50% of the inner volume. Note: Head b. of this entry does not specify magnets specially designed for and exported as parts of medical nuclear magnetic resonance (NMR) imaging systems. It is understood that, for the purposes of this entry, the wording as part of' does not necessarily mean physical part in the same shipment. Separate shipments from different sources are allowed, provided the related export documents clearly specify thepart of' relationship.

Accelerators that are component parts of devices designed for purposes other than electron beam or X—ray radiation (electron microscopy, for example) and those designed for medical purposes:

Having an accelerator peak electron energy of 500 keV or greater but less than 25 MeV and with a figure of merit (K) of 0·25 or greater, where K is defined as: $K=1·7×103V2·65;Q;$ where V is the peak electron energy in million electron volts and Q is the total accelerated charge in coulombs if the accelerator beam pulse duration is less than or equal to 1 microsecond; if the accelerator beam pulse(cont.)duration is greater than 1 microsecond, Q is the maximum accelerated charge in 1 microsecond [Q equals the integral of i with respect to t, over the lesser of1 microsecond or the time duration of the beam pulse (Q=[integral] idt), where i is beam current in amperes and t is time in seconds]; or

Having an accelerator peak electron energy of 25 MeV or greater and a peak power greater than 50MW. [Peak power=(peak potential in volts)×(peak beam current in amperes)]

Technical Notes:

(a) Time duration of the beam pulse—In machines, based on microwave accelerating cavities, the time duration of the beam pulse is the lesser of1 microsecond or the duration of the bunched beam packet resulting from one microwave modulator pulse.

(b) Peak beam current—In machines based on microwave accelerating cavities, the peak beam current is the average current in the time duration of a bunched beam packet.

3A202

Oscilloscopes and transient recorders as follows; and specially designed components therefor:

(a) Non—modular analogue oscilloscopes having a bandwidth of 1GHz or greater;

(b) Modular analogue oscilloscope systems having either of the following characteristics:

A mainframe with a bandwidth of 1GHz or greater; or

Plug—in modules with an individual bandwidth of 4GHz or greater;

(c) Analogue sampling oscilloscopes for the analysis of recurring phenomena with an effective bandwidth greater than 4GHz;

(d) Digital oscilloscopes and transient recorders, using analogue—to—digital conversion techniques, capable of storing transients by sequentially sampling single—shot inputs at successive intervals of less than 1ns (greater than 1 giga—sample per second), digitizing to 8 bits or greater resolution and storing 256 or more samples.

Note: Specially designed components specified in this entry are the following, for analogue oscilloscopes:

Plug—in units;

External amplifiers;

Pre—amplifiers;

Sampling devices;

Cathode ray tubes.

3A225

Frequency changers (also known as converters or inverters) or generators, other than those specified in entry B10.b.2.k. of Group 2 of Part III of this Schedule, having all of the following characteristics:

(a) A multiphase output capable of providing a power of 40W or more;

(b) Capable of operating in the frequency range between 600 and 2,000Hz;

(d) Frequency control better than 0·1%.

3A226

Direct current high—power supplies capable of continuously producing, over a time period of 8 hours, 100V or greater with current output of 500A or greater and with current or voltage regulation better than 0·1%.

3A227

High—voltage direct current power supplies capable of continuously producing, over a time period of 8 hours, 20,000V or greater with current output of 1A or greater and with current or voltage regulation better than 0·1%.

3A228

Switching devices, as follows:

(a) Cold—cathode tubes (including gas krytron tubes and vacuum sprytron tubes), whether gas filled or not, operating similarly to a spark gap, containing three or more electrodes, and having all of the following characteristics:

Anode peak voltage rating of 2,500V or more;

Anode peak current rating of 100A or more; and

Anode delay time of 10 microsecond or less;

(b) Triggered spark—gaps having an anode delay time of 15 microsecond or less and rated for a peak current of 500A or more;

Anode peak voltage rating greater than 2,000V;

Anode peak current rating of 500A or more; and

Turn—on time of 1 microsecond or less.

3A229

Firing sets and equivalent high—current pulse generators (for controlled detonators), as follows[^f00035]:

(a) Explosive detonator firing sets designed to drive multiple controlled detonators specified in entry 3A232;

(b) Modular electrical pulse generators (pulsers) designed for portable, mobile or ruggedized use (including xenon flash—lamp drivers) having all the following characteristics:

Capable of delivering their energy in less than 15 microsecond;

Having an output greater than 100A;

Having a rise time of less than 10 microsecond into loads of less than 40ohms (rise time is the time interval from 10% to 90% current amplitude when driving a resistive load);

Enclosed in a dust—tight enclosure;

No dimension greater than 254mm;

Weight less than 25kg; and

Specified for use over an extended temperature range (223K [−50°C] to 373K [100°C]) or specified as suitable for aerospace use.

3A230

High—speed pulse generators with output voltages greater than 6 volts into a less than 55ohm resistive load, and with pulse transition times less than 500 picoseconds.

3A231

Neutron generator systems, including tubes, designed for operation without an external vacuum system and utilizing electrostatic acceleration to induce a tritium—deuterium nuclear reaction.

3A232

Detonators and multipoint initiation systems, as follows[^f00036]:

(a) Electrically driven explosive detonators, the following:

Exploding bridge (EB);

Exploding bridge wire (EBW);

Slapper;

Exploding foil initiators (EFI);

(b) Arrangements using single or multiple detonators designed to nearly simultaneously initiate an explosive surface (over greater than 5,000mm²) from a single firing signal (with an initiation timing spread over the surface of less than2·5 microseconds).

Note: This entry does not specify detonators using only primary explosives, such as lead azide.

Technical Note: The detonators of concern all utilise a small electrical conductor (bridge, bridge wire or foil) that explosively vapourises when a fast, high—current electrical pulse is passed through it. In nonslapper types, the exploding conductor starts a chemical detonation in a contacting high—explosive material such as PETN (Pentaerythritoltetranitrate). In slapper detonators, the explosive vapourisation of the electrical conductor drives a flyer or slapper across a gap and the impact of the slapper on an explosive starts a chemical detonation. The slapper in some designs is driven by a magnetic force. The term exploding foil' detonator may refer to either an EB or a slapper—type detonator. Also, the wordinitiator' is sometimes used in place of the word `detonator'.

3A233

Mass spectrometers, other than those specified in entry B20(g) of Group 2 of Part III of this Schedule, capable of measuring ions of 230 atomic mass units or greater and having a resolution of better than 2 parts in 230, as follows; and ion sources therefor:

(a) Inductively coupled plasma mass spectrometers (ICP/MS);

(b) Glow discharge mass spectrometers (GDMS);

(d) Electron bombardment mass spectrometers which have a source chamber constructed from, lined with or plated with materials resistant to UF₆;

(e) Molecular beam mass spectrometers as follows:

Which have a source chamber constructed from, lined with or plated with stainless steel or molybdenum and have a cold trap capable of cooling to 193K (−80°C) or less; or

Which have a source chamber constructed from, lined with or plated with materials resistant to UF₆; or

(f) Mass spectrometers equipped with a microfluorination ion source designed for use with actinides or actinide fluorides.

3A990

Apparatus or devices, other than those specified in entry PL5006 of Group 1 of Part III of this Schedule or entries 3A229 to 3A232 of this Group, designed for the handling, control, discharging, decoying, jamming, detonation, disruption or detection of explosive devices or improvised explosive devices;

Test, Inspection and Production Equipment

3B

Equipment for the manufacture or testing of semiconductor devices or materials, as follows, and specially designed components and accessories therefor:

3B001

Stored programme controlled equipment for epitaxial growth, as follows:

(a) Capable of producing a layer thickness uniform to less than ±2·5% across a distance of 75mm or more;

(b) Metal organic chemical vapour deposition (MOCVD) reactors specially designed for compound semiconductor crystal growth by the chemical reaction between materials specified in entries 3C003 or 3C004;

3B002

Stored programme controlled equipment designed for ion implantation, having any of the following:

(a) An accelerating voltage exceeding 200keV;

(b) Specially designed and optimized to operate at an accelerating voltage of less than 10keV;

(d) Capable of high energy oxygen implant into a heated semiconductor material substrate.

3B003

Stored programme controlled anisotropic plasma dry etching equipment, as follows:

(a) With cassette—to—cassette operation and load—locks, and having either of the following:

Magnetic confinement; or

Electron cyclotron resonance (ECR);

(b) Specially designed for equipment specified in entry 3B006 and having either of the following:

Magnetic confinement; or

Electron cyclotron resonance (ECR).

3B004

Stored programme controlled plasma enhanced CVD equipment, as follows:

(a) With cassette—to—cassette operation and load—locks, and having either of the following:

Magnetic confinement; or

Electron cyclotron resonance (ECR);

(b) Specially designed for equipment specified in entry 3B006 and having either of the following:

Magnetic confinement; or

Electron cyclotron resonance (ECR).

3B005

Stored programme controlled multifunctional focussed ion beam systems specially designed for manufacturing, repairing, physical layout analysis and testing of masks or semiconductor devices, having either of the following:

(a) Target—to—beam position feedback control precision of 0·25 micrometre or finer; or

(b) Digital—to—analogue conversion resolution exceeding 12 bit.

3B006

Stored programme controlled automatic loading multi—chamber central wafer handling systems, having interfaces for wafer input and output, to which more than two pieces of semiconductor processing equipment are to be connected, to form an integrated system in a vacuum environment for sequential multiple wafer processing.

3B007

Stored programme controlled lithography equipment, as follows:

(a) Align and expose step and repeat equipment for wafer processing using photo—optical or X—ray methods, having any of the following:

A light source wavelength shorter than 400nm;

A numerical aperture more than 0·40; or

An overlay accuracy of ±0·20 micrometre (3 sigma) or better; Note: Head a. of this entry does not specify align and expose step and repeat equipment having all of the following: A light source wavelength of 436nm or more; A numerical aperture 0·38 or less; and An image size diameter 22mm or less.

(b) Equipment specially designed for mask making or semiconductor device processing using deflected focussed electron beam, ion beam or laser beam, with any of the following:

A spot size smaller than 0·2 micrometre;

Capable of producing a pattern with a feature size of less than 1 micrometre; or

An overlay accuracy of better than ±0·20 micrometre (3 sigma).

3B008

Masks or reticles, as follows:

(a) For integrated circuits specified in entry 3A001;

(b) Multi—layer masks with a phase shift layer.

3B009

Stored programme controlled test equipment, specially designed for testing semiconductor devices and unencapsulated dice, as follows:

(a) For testing S—parameters of transistor devices at frequencies exceeding 31GHz;

(b) For testing integrated circuits, and electronic assemblies thereof, and capable of performing functional (truth table) testing at a pattern rate of more than 40MHz;

Note:Head b. of this entry does not specify test equipment specially designed for testing:

Electronic assemblies or a class of electronic assemblies for home or entertainment applications;

Electronic components, electronic assemblies or integrated circuits not specified in this Group.

Note: Head c. of this entry does not specify test equipment specially designed for testing microwave integrated circuits for equipment designed or rated to operate in the Standard Civil Telecommunication Bands at frequencies not exceeding 31GHz.

(d) Electron beam systems designed for operation at or below 3keV, or laser beam systems, for the non—contactive probing of powered—up semiconductor devices, with both of the following:

Stroboscopic capability with either beam—blanking or detector strobing; and

An electron spectrometer for voltage measurement with a resolution of less than 0·5V. Note:Head d. of this entry does not specify scanning electron microscopes; except: when specially designed and instrumented for the non—contactive probing of powered—up semiconductor devices.

Materials

3C

3C001

Hetero—epitaxial materials consisting of a substrate with stacked epitaxially grown multiple layers of:

(a) Silicon;

(b) Germanium; or

Technical Note: III/V compounds are polycrystalline or binary or complex monocrystalline products consisting of elements of groups IIIA and VA of Mendeleyev’s perodic classification table (gallium arsenide, gallium—aluminium arsenide, indium phosphide, etc).

3C002

Resist materials, as follows, and substrates coated with controlled resists:

(a) Positive resists with a spectral response optimized for use below 370 nm;

(b) All resists, for use with electron beams or ion beams, with a sensitivity of0·01 microcoulomb/mm² or better;

(d) All resists optimized for surface imaging technologies, including silyated resists.

Technical Note: Silyation techniques are defined as processes incorporating oxidation of the resist surface to enhance performance for both wet and dry developing.

3C003

Metal—organic compounds of aluminium, gallium or indium, having a purity (metal basis) better than 99·999%.

3C004

Hydrides of phosphorous, arsenic or antimony, having a purity better than 99·999%, even if diluted in neutral gases.

Software

3D

3D001

Software specially designed for the development or production of goods specified inhead b. of entry 3A001 to head h. of entry 3A002 or Sub—category 3B.

3D002

Software specially designed for the use of stored programme controlled equipment specified in sub—category 3B.

3D003

Computer—aided—design (CAD) software for semiconductor devices or integrated circuits, having any of the following:

(a) Design rules or circuit verification rules;

(b) Simulation of the physically laid out circuits; or

Technical Note: A lithographic processing simulator is a software package used in the design phase to define the sequence of lithographic, etching and deposition steps for translating masking patterns into specific topographical patterns in conductors, dielectrics or semiconductor material.

Note: This entry does not specify software specially designed for schematic entry, logic simulation, placing and routing, layout verification or pattern generation tape.

N.B.: Libraries, design attributes or associated data for the design of semiconductor devices or integrated circuits are considered as technology.

3D101

Software specially designed for the use of goods specified in head b. of entry 3A101.

Technology

3E

3E001

Technology required for the development or production of goods specified in sub—categories 3A, 3B or 3C;

3E002

The export of goods specified in this entry is only prohibited to any destination in any country listed in Schedule 2.

3E101

Technology required for the use of goods specified in sub—heads a.1. or a.2. of entry 3A001, entries 3A101 or 3D101.

3E102

Technology required for the development of software specified in entry 3D101.

3E201

Technology required for the use of goods specified in sub—head e.2. of entry 3A001, sub—head e.3. of entry 3A001, sub—head e.5. of entry 3A001, or entries 3A201, 3A202, 3A225 to 3A233.

3E990

Technology required for the use of goods specified in entry 3A990.

Notes:

1

Computers, related equipment or software performing telecommunications or local area network functions must also be evaluated against the performance characteristics of Category 5 (Part 1—Telecommunications).

1

Control units which directly interconnect the buses or channels of central processing units, main storage or disk controllers are not regarded as telecommunications equipment described in Category 5 (Part 1—Telecommunications).

2

Software which provides routing or switching of datagram or fast select packets (i.e., packet by packet route selection) or of software specially designed for packet switching, is specified in Category 5 (Part 1—Telecommunications).

2

Computers, related equipment or software performing cryptographic, cryptanalytic, certifiable multi—level security or certifiable user isolation functions, or which limit electromagnetic compatibility (EMC), must also be evaluated against the performance characteristics in Category 5 (Part 2—Information Security).

Equipment, Assemblies and Components

4A

4A001

Electronic computers and related equipment, as follows, and electronic assemblies and specially designed components therefor[^f00037]:

(a) Specially designed to have either of the following characteristics:

Rated for operation at an ambient temperature below 228 K (−45°C) or above 343 K (70°C); or Note: Sub—head a.1. of this entry does not apply to computers specially designed for civil automobile or railway engine applications.

Radiation hardened to exceed any of the following specifications: Total Dose 5×10⁵ Rads (Si); Dose Rate Upset 5× 10⁸ Rads (Si)/sec; or Single Event Upset 1×¹⁰− Error/bit/day; Note: For equipment designed or rated for transient ionising radiation, see Group 1 of Part III of this Schedule.

(b) Having characteristics or performing functions exceeding the limits in Category 5 (Part 2—Information Security).

4A002

Hybrid computers, as follows, and electronic assemblies and specially designed components therefor[^f00038]:

(a) Containing digital computers specified in entry 4A003;

(b) Containing analogue—to—digital or digital—to—analogue converters having both of the following characteristics:

32 channels or more; and

A resolution of 14 bits (plus sign bit) or more with a conversion rate of 200,000 conversions/s or more.

4A003

Digital computers, electronic assemblies, and related equipment therefor, as follows, and specially designed components therefor:

Notes:

1

This entry includes vector processors, array processors, logic processors, and equipment for image enhancement or signal processing.

2

Digital computers or related equipment described in this entry are specified by the entry that refers to other equipment or systems provided:

(a) The digital computers or related equipment are essential for the operation of the other equipment or systems;

(b) The digital computers or related equipment are not a principal element of the other equipment or systems; and

NB:

(1) The status of signal processing or image enhancement equipment described in head g. of this entry and specially designed for other equipment with functions limited to those required for the other equipment is determined by the status of the other equipment even if it exceeds the principal element criterion.

(2) Digital computers or related equipment for telecommunications equipment, are specified in Category 5 (Part 1—Telecommunications).

3

Digital computers or related equipment are not specified in entry 4A003 provided:

(a) They are essential for medical applications;

(b) The equipment is substantially restricted to medical applications by nature of its design and performance;

(c) The equipment does not have user—accessible programmability other than that allowing for insertion of the original or modified programmes supplied by the original manufacturer;

(d) The composite theoretical performance of any digital computer which is not designed or modified but is essential for the medical application, does not exceed 20 million theoretical operations per second (Mtops); and

(e) The technology for the digital computers or related equipment is specified in sub—category 4E.

(a) Designed for combined recognition, understanding and interpretation of image or continuous (connected) speech;

(b) Designed or modified for fault tolerance;

Note: For the purposes of head b. of this entry, digital computers and related equipment are not considered to be designed or modified for fault tolerance if they use:

(1) Error detection or correction algorithms in main storage;

(2) The interconnection of two digital computers so that, if the active central processing unit fails, an idling but mirroring central processing unit can continue the system’s functioning;

(3) The interconnection of two central processing units by data channels or by use of shared storage to permit one central processing unit to perform other work until the second central processing unit fails, at which time the first central processing unit takes over in order to continue the system’s functioning; or

(4) The synchronisation of two central processing units by software so that one central processing unit recognises when the other central processing unit fails and recovers tasks from the failing unit.

(c) Digital computers having a composite theoretical performance (CTP) exceeding12·5 million theoretical operations per second (Mtops);

(d) Electronic assemblies specially designed or modified to enhance performance by aggregation of computing elements, as follows:

(1) Designed to be capable of aggregation in configurations of 16 or more computing elements; or

(2) Having a sum of maximum data rates on all data channels available for connection to associated processors exceeding 40MBytes/s;

Notes:

(1) Head d. of this entry applies only to electronic assemblies and programmable interconnections not exceeding the limit of head c. of this entry, when shipped as unintegrated electronic assemblies. It does not apply to electronic assemblies inherently limited by nature of their design for use as related equipment specified in heads e. to k. of this entry.

(2) Head d. of this entry does not specify electronic assemblies specially designed for a product or family of products whose maximum configuration does not exceed the limit of head c. of this entry.

(e) Disk drives and solid state storage equipment, as follows:

(1) Magnetic, erasable optical or magneto—optical disk drives with a maximum bit transfer rate exceeding 25Mbit/s;

(2) Solid state storage equipment, other than main storage (also known as solid state disks or RAM disks), with a maximum bit transfer rate exceeding 36Mbit/s;

(f) Input/output control units designed for use with equipment specified in head e. of this entry;

(g) Equipment for signal processing or image enhancement having a composite theoretical performance exceeding 8·5 million theoretical operations per second (Mtops);

(h) Graphics accelerators or graphics coprocessors exceeding a 3—D vector rate of 400,000 or, if supported by 2—D vectors only, a 2—D vector rate of 600,000;

Note: Head h. of this entry does not apply to work stations designed for and limited to:

(1) Graphic arts (e.g.,printing, publishing); and

(2) The display of two—dimensional vectors.

(i) Colour displays or monitors having more than 12 resolvable elements per mm in the direction of the maximum pixel density;

Notes:

(1) Head i. of this entry does not specify displays or monitors not specially designed for electronic computers.

(2) Displays specially designed for Air Traffic Control (ATC) systems are treated as specially designed components for ATC systems under Category 6.

(j) Equipment performing analogue—to—digital or digital—to—analogue conversions exceeding the limits in sub—head a.5. of entry 3A001;

(k) Equipment containing terminal interface equipment exceeding the limits in sub—head b.3. of entry 5A001.

Note: For the purposes of head k. of this entry, terminal interface equipment includes local area network interfaces, modems and other communications interfaces. Local area network interfaces are evaluated as network access controllers.

4A004

Computers, as follows, and specially designed related equipment, electronic assemblies and components therefor:

(a) Systolic array computers;

(b) Neural computers;

4A101

Analogue computers, digital computers or digital differential analysers, other than those specified in sub—head a.1. of entry 4A001, which are ruggedized and designed or modified for use in systems specified in entries 9A004 or 9A104.

4A102

Hybrid computers specially designed for modelling, simulation or design integration of systems specified in entries 9A004 or 9A104.

Test, Inspection and Production Equipment

4B

4B001

Equipment specially designed for the application of magnetic coating to non—flexible (rigid) magnetic or magneto—optical media specified in head e. of entry 4A003.

4B002

Stored programme controlled equipment specially designed for monitoring, grading, exercising or testing rigid magnetic media specified in head e. of entry 4A003.

4B003

Equipment specially designed for the production or alignment of heads or head/disk assemblies for rigid magnetic and magneto—optical storage specified in head e. of entry 4A003, and electro—mechanical or optical components therefor.

Materials

4C

4C001

Materials specially formulated for and required for the fabrication of head/disk assemblies for magnetic and magneto—optical hard disk drives specified in head e. of entry 4A003.

Software

4D

Note: Software for the development, production, or use of equipment described in other Categories is dealt with in the appropriate Category. Software for equipment described in this Category is dealt with herein.

4D001

Software specially designed or modified for the development, production or use of goods specified in entries 4A001 to 4A004, or sub—categories 4B, 4C or 4D.

4D002

Software specially designed or modified to support technology specified in sub—category 4E.

4D003

Specific software, as follows:

(a) Programme proof and validation software using mathematical and analytical techniques and designed or modified for programmes having more than 500,000 source code instructions;

(b) Software allowing the automatic generation of source codes from data acquired on line from external sensors described in these Lists;

(c) Operating system software, software development tools and compilers specially designed for multi—data—stream processing equipment, in source code;

(d) Expert systems or software for expert system inference engines providing both:

Time dependent rules; and

Primitives to handle the time characteristics of the rules and the facts;

(e) Software having characteristics or performing functions exceeding the limits in Category 5 (Part 2—Information Security);

(f) Operating systems specially designed for real time processing equipment which guarantees a global interrupt latency time of less than 30 microseconds.

Technology

4E

4E001

Technology required, for the development, production or use of goods specified in sub—categories 4A, 4B, 4C or 4D.

4E002

The export of goods specified in this entry is only prohibited to any destination in any country listed in Schedule 2.

(a) Technology for the development or production of goods released in head h. of entry 4A003;

(b) Technology for the development or production of goods designed for multi—data—stream processing;

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