LegalizeThe Export of Goods (Control) Order 1987
| IL1501 | Navigation, direction finding, radar and airborne communication equipment, the following– | |
|---|---|---|
| 1 Airborne communication equipment having any of the following characteristics– | ||
| a designed to operate at frequencies greater than 156 MHz | A | |
| b incorporating facilities for– | ||
| i the rapid selection of more than 200 channels per equipment, or | A | |
| ii equipment using frequency synthesis techniques | A | |
| except conventional equipment operating in the frequency range of 108 to 136 MHz with 720 channels or fewer at not less than 25 kHz spacing; | ||
| rated for continuous operating over a range of ambient temperatures extending from below –55°C to above +55°C | A | |
| or | ||
| d designed for modulating methods employing any form of digital modulation using time and frequency redundancy such as “Quantized Frequency Modulation” (QFM) | A | |
| 2 Airborne navigation and direction finding equipment, the following– | ||
| a equipment designed to make use of the Doppler frequency phenomena | A | |
| b equipment utilising the rectilinear propagation of electromagnetic waves having a frequency less than 4 × 10u21u24 Hz (0.75 microns) except standard commercial airborne equipment needed to equip civil aircraft or as normal standard equipment incorporated in civil aircraft being exported for civil commercial use, provided such equipment is in conformity with ICAO standards and assures no function exceeding those resulting from such standards, is not designed to use satellite-broadcast navigation signals and is not designed to make use of hyperbolic grids at frequencies greater than 3MHz, such as Marker beacons, ILS, VOR (“OMNI”), Omega, Loran A and B; | A | |
| c radio altimeters, the following– | ||
| i pulse modulated | A | |
| ii frequency modulated having a displayed electrical output accuracy better than .266 0.914 m over the whole range between 0 and 30.4 m or .266 3% above 30.4 m | A | |
| iii frequency modulated using other than conventional techniques | A | |
| d direction finding equipment, operating at frequencies greater than 5 MHz, except direction finding equipment specially designed for search and rescue purposes and operating under crystal control at a frequency of 121.5 MHz or on alternating frequencies of 121.5 MHz and 243 MHz and personal locator beacons operating on such frequencies including those also having an additional channel selectable for voice mode only | A | |
| e equipment rated for continuous operation over a range of ambient temperatures extending from below –55°C to above +55°C | A | |
| 3 Airborne radar equipment | A | |
| 4 Ground and marine radar equipment, the following– | ||
| a equipment operating at a frequency of less than 1.5 GHz and having a peak output power from the transmitter greater than 2.5 MW | A | |
| b equipment operating at a frequency within the range 1.5 to 3.5 GHz and having a peak output power from the transmitter greater than 1.5 MW | A | |
| c equipment operating at a frequency within the range from 3.5 to 6.0 GHz and having a peak output power from the transmitter greater than 1 MW | A | |
| d equipment operating at a frequency within the range from 6.0 GHz to 10.5 GHz and having a peak output power from the transmitter greater than 500 kW | A | |
| e equipment operating at a frequency of less than 3.5 GHz and having an 80% or better probability of detection for a 10 sq m target at a free space range of 250 nautical miles | A | |
| f equipment operating at a frequency within the range from 3.5 to 10.5 GHz and having an 80% or better probability of detection for a 10 sq m target at a free space range of 100 nautical miles | A | |
| g equipment utilising other than pulse modulation with either a constant or a staggered pulse repetition frequency, in which the carrier frequency of the transmitted signal is not changed deliberately between groups of pulses, from pulse to pulse or within a single pulse, except civil airport radar equipment using a carrier frequency that may change from pulse to pulse between two fixed frequencies separated in time and in frequency by constant magnitudes | A | |
| h equipment using a Doppler technique other than moving target indicator systems using a conventional double or triple pulse delay line cancellation technique; | A | |
| except equipment designed for aerial navigation surveillance or radar control at civil airports | ||
| i equipment including any digital signal processing techniques used for automatic target tracking | A | |
| j equipment including other than signal processing techniques with a facility for electronic tracking | A | |
| k equipment including other than conventional signal processing techniques | A | |
| l equipment not specified above operating at a frequency of more than 10.5 GHz or at a frequency not in normal civil use | A | |
| In this head cumulative probability of detection must be determined according to the following parameters– | ||
| a radial closing velocity of the target 610 m per second; | ||
| b probability of false alarm 10u2–u28; | ||
| c operating factor 3 dB; | ||
| d fluctuation of the target in accordance with Rayleigh distribution. | ||
| 5 Ground and marine equipment for use with airborne navigation equipment utilising the constant velocity; the rectilinear propagation characteristics of electromagnetic waves having frequency less than 4 x 10u21u24 Hz (0.75 micron) | A | |
| except ground and marine equipment provided the ground equipment is for civil use in association with civil airborne equipment, and | ||
| i is in conformity with ICAO standards and assures no function exceeding those resulting from such standards; | ||
| ii is not designed to make use of hyperbolic grids at frequencies greater than 3 MHz; | ||
| 6 Ground and marine direction finding equipment operating at frequencies greater than 30 MHz | A | |
| 7 Ground or marine navigation and geodetic positioning systems designed for use with satellite-provided timing, positioning or navigation information, except equipment restricted to use with TRANSIT satellite systems or other systems not specified in this entry, provided that they do not incorporate equipment specified in head (8) below | A | |
| 8 Timing receivers whose only function is automatically to provide time derived from satellite signals to within 1 millisecond of Universal Coordinate Time (UCT) or better | A | |
| 9 Specially designed components and software for the apparatus in heads (1) to (8) above (inclusive) and specialised testing or calibrating equipment and training or simulating equipment for the apparatus in heads (2) to (8) above (inclusive) | A | |
| except | ||
| a Secondary radar equipment specified in heads (3) or (4) above specially designed for civil air traffic identification and control purposes; | ||
| b Equipment assemblies for civil marine automatic radar plotting aids or electronic relative motion analyzers designed to achieve the requirements published by the International Maritime Organization in accordance with the Safety of Life at Sea (SOLAS) conventions, provided the designed tracking speeds do not exceed relative values of greater than 150 knots (77.1 metres/second); | ||
| c Ground radar of the hand-held or automobile-mounted type used for vehicle speed monitoring by police authorities and operating in the frequency band from 10.5 to 10.55 GHz. | ||
| IL1502 | Communication, detection or tracking equipment of a kind using ultra-violet radiation, infra-red radiation or ultrasonic waves, and specially designed software and components therefor, | A |
| except | ||
| 1 Industrial equipment of a kind using cells not specified in the entry in this Group relating to photosensitive components; | ||
| 2 Equipment used for industrial and civilian intrusion alarms, traffic and industrial movement control and counting systems, medical applications, industrial inspection, sorting or analysis of the properties of materials, or for simple educational or entertainment purposes; | ||
| 3 Flame detectors for industrial furnaces; | ||
| 4 Equipment of a kind using a single detector cell with no scanning of the detector and used for laboratory or industrial non-contact temperature measurement; | ||
| 5 Instruments capable of measuring radiated power or energy and having a response time constant greater than 10 milliseconds; | ||
| 6 Equipment designed for measuring radiated power or energy for laboratory, agricultural or industrial purposes using a single detector cell with no scanning of the detector, and single detector cell assemblies or probes specially designed therefor, having a response time constant greater than 1 microsecond; | ||
| 7 Infra-red geodetic equipment using a lighting source other than a laser and manually operated, or using a lighting source (other than a laser or a light-emitting diode) remote from the measuring equipment; | ||
| 8 Equipment of a kind using ultrasonic waves, the following– | ||
| a which operates in contact with a controlled material to be inspected or which is used for industrial cleaning, sorting or materials handling, emulsification or homogenisation; | ||
| b used for underwater communications, designed for operation with amplitude modulation and having a communications range of 500 m or less, a carrier frequency of 40 to 60 kHz, and a carrier power supplied to the transducer of 1 W or less. | ||
| IL1510 | Marine or terrestrial acoustic or ultrasonic systems or equipment, using acoustic travel time differences, specially designed for positioning surface vessels or underwater vehicles, or for detecting or locating underwater or subterranean objects or features, and specially designed components of such systems or equipment, including but not limited to hydrophones, transducers, beacons, towed hydrophone arrays, beamformers and geophones, other than moving coil or moving magnet electromagnetic geophones, and specially designed software therefor | A |
| 1 Marine systems or equipment, the following– | ||
| a active transmitting, or transmitting and receiving systems or equipment, the following: | ||
| i depth-sounders of a kind used solely for measuring the depth of water or the distance of submerged or buried objects vertically below the equipment; | ||
| ii horizontally-operated object detection or location systems having all the following characteristics: | ||
| a a transmitting frequency of 15 kHz or greater; | ||
| b a sound pressure level less than 250 dB (reference 1 micropascal at 1 metre) for apparatus with an operating frequency of between 15 and 30 kHz and with no decibel limitation for apparatus operating at frequencies of 30 kHz or greater; | ||
| c a transmission capability limited to .266 10% of the design centre frequency; | ||
| d a design incapable of withstanding pressure during normal operation at depths greater than 1,000 metres; and | ||
| e a display range of 5,000 metres or less; | ||
| iii electronic noise sources designed for vertically directional use only; | ||
| iv mechanical noise sources; | ||
| v chemical noise sources; | ||
| b passive receiving equipment, whether or not related in normal application to separate equipment, the following– | ||
| i acoustic hydrophones and transducers, having all the following characteristics: | ||
| a incorporating sensitive elements made of piezoelectric ceramics or crystal and made with a sensitivity no greater than – 192 dB (reference 1 volt per micropascal); | ||
| b a design incapable of operating at depths greater than 100 metres; and | ||
| c independently mounted or configured and incapable of assembly by the user into a towed hydrophone array. | ||
| c systems or equipment positioning surface vessels or underwater vehicles, having all the following characteristics: | ||
| i their control capability is limited to release and basic transponder capabilities; | ||
| ii they are not capable of processing responses from more than four beacons in the calculation of a single point, and have neither devices nor software performing correction of velocity-of-propagation errors for point calculation, nor any coherent signal processing means; | ||
| iii they are capable only of operating within a range of less than 1,000 metres or, if capable of operating beyond a range of more than 1,000 metres, are not capable of achieving positional accuracy of within 20 metres when measured at a range of 1,000 metres; | ||
| iv transducers, acoustic modules or hydrophones therefor are not designed to withstand pressure during normal operation at depths greater than 1,000 metres; and | ||
| v beacons therefor are not designed to withstand pressure during normal operation at depths greater than 1,000 metres, do not have oscillators with a stability greater than 10u2–u25 over periods of 24 hours, and do not use complex codes or beamformers which have shaded or formed beams. | ||
| 2 Terrestrial systems or equipment having both of the following characteristics– | ||
| a not reasonably capable of conversion by the user to underwater or marine applications specified in this entry; and | ||
| b not employing geophones or other transducers specified in this entry. | ||
| In this entry “passive hydrophone sensitivities” are based on sensitivity being defined as 20 times the logarithm to the base 10 of the ratio of rms output voltage to a 1 volt reference, when the hydrophone sensor is placed in a plane wave acoustic field having an rms pressure of 1 micropascal. For example, a hydrophone of – 160 dB (reference 1 volt per micropascal) would yield an output voltage of 10u2–u28 volts in such a field, while one of – 180 dB sensitivity would yield only 10u2–u29 volts output. | ||
| IL1514 | Pulse modulators of a kind used for providing electric impulses of peak power exceeding 20 MW or of a duration of less than 0.1 microsecond, or with a duty cycle in excess of 0.005; and pulse transformer and pulse-forming equipment and delay lines, being components specially designed for such pulse modulators | A |
| IL1516 | Radio receivers, the following– | |
| 1 Panoramic radio receivers, being receivers which search or scan automatically a part of the electromagnetic spectrum and indicate or identify the received signals, except ancillary equipment for receivers with which the frequency searched does not exceed a bandwidth of 20MHz or does not incorporate a raster or storage display capability | A | |
| 2 Digitally controlled radio receivers, whether or not computer controlled, which search or scan automatically a part of the electromagnetic spectrum and in which the switching operation takes less than 10 milliseconds and which indicate or identify the received signals | A | |
| except non-ruggedised digitally controlled pre-set type radio receivers designed for use in civil communications which have 200 selective channels or fewer. | ||
| 3 Receivers for spread spectrum and frequency agile systems operating within a total transmitted bandwidth which is: | ||
| a 100 or more times greater than the bandwidth of any one information channel; and | ||
| b in excess of 50 kHz | A | |
| 4 Receivers incorporating digital signal processing, except receivers specially designed for internationally allocated civil frequency bands only and which do not permit user-accessible reprogrammability of the digital signal-processing circuits | A | |
| 5 Specially designed components, accessories and software for the receivers specified in heads (1) to (4) above (inclusive) | A | |
| IL1517 | Radio transmitters (except radio relay communication equipment specified in the entry in this Group relating thereto), the following– | |
| 1 Transmitters or transmitter amplifiers designed to operate at output frequencies greater than 960 MHz | A | |
| 2 Transmitters or transmitter amplifiers designed to provide any of the following features: | ||
| a any system of pulse modulation other than amplitude-, frequency-, or phase-modulated television or telegraphic transmitters or pulse-width modulated sound broadcasting transmitters | A | |
| b rated for operation over a range of ambient temperatures extending from below –40°C to above +60°C | A | |
| 3 Transmitters for spread spectrum and frequency agile systems having a total transmitted bandwidth which is: | ||
| a 100 or more times greater than the bandwidth of any one information channel, and | ||
| b in excess of 50 kHz | A | |
| 4 Specially designed components for the transmitters specified in heads (1) to (3) above (inclusive) Except transmitters or transmitter-amplifiers, or systems containing such equipment, or accessories and sub-assemblies therefor, with the following characteristics– | ||
| a Specially designed for medical applications and operating at ISM frequencies; | ||
| b Having an output of not more than 10 W, which are specially designed for: | ||
| 1 Industrial or civil intrusion detection and alarm; | ||
| 2 Industrial and traffic detection, counting, speed measurement, identification and movement control; | ||
| 3 Carrying the information from the equipment above, or the information from environmental, air or water, pollution detection or measurement systems. | ||
| c Transmitters using wideband amplifiers designed for non-frequency – agile civil applications, such as television and mobile service. | ||
| IL1518 | Telemetering and telecontrol equipment suitable for use with aircraft (piloted or pilotless), missiles (guided or unguided) or space vehicles (guided or unguided) and specially designed test equipment therefor | A |
| except equipment specially designed to be used for remote control of toys such as model planes and boats and having electric field strength of no more than 200 microvolts per metre at a distance of 500 metres | ||
| IL1519 | Communication transmission equipment (single and multi-channel), including terminal, intermediate amplifier or repeater equipment and multiplex buses, and multiplex equipment used for communications within or between communication or other equipment and systems, by line, cable, optical fibre or radio means, and associated modems and multiplex equipment, the following– | |
| 1 Equipment employing analogue transmission techniques with analogue input and output, including but not limited to frequency division multiplex (FDM), designed to deliver, carry or receive baseband frequencies higher than those in sub-heads (a) and (b) below into, or in, a communications system– | ||
| a in the case of equipment suitable for underwater cable, frequencies higher than 300 kHz | A | |
| b in all other cases, frequencies higher than 19 MHz | A | |
| 2 Equipment employing digital transmission techniques designed for operation at a total bit rate at the highest level multiplex point exceeding 8.5 Megabits per second and having analogue input and output including, but not limited to, pulse code modulation (PCM) designed for use on communications circuits | A | |
| 3 Data communications equipment employing digital transmission with digital input and output, including telegraphic and data transmission, the following– | ||
| a equipment designed for operation at a data signalling rate in bits per second, excluding servicing and administrative channels, numerically exceeding either– | ||
| i 9,600 or 320% of the channel (or sub-channel) bandwidth in hertz, when using FDM voice channel; or | A | |
| ii 19,200 when using baseband | A | |
| b equipment employing an automatic error-detection and correction system in which retransmission is not required for correction and the data signalling rate exceeds 300 bits per second | A | |
| c statistical multiplexers designed for operation at a data signalling rate in bits per second, excluding servicing and administrative channels, numerically exceeding either 4,800 or 160% of the channel (or sub-channel) bandwidth in hertz | A | |
| 4 Components and accessories and software specially designed for equipment specified in heads (1) to (3) above (inclusive) and test equipment specially designed for the equipment specified in head (2) above | A | |
| except | ||
| a Telemetering, telecommand and telesignalling equipment designed for industrial purposes, together with data transmission equipment not intended for the transmission of written or printed text, and specially designed components, accessories and test equipment therefor. By telemetering, telecommand and telesignalling equipment is meant sensing heads for the conversion of information into electrical information, the systems used for its long-distance transmission, the processes used to translate electrical information into coded data (telemetering), into control signals (telecommand), and into display signals (telesignalling); | ||
| b Facsimile equipment other than that specified in the entry relating to cryptographic equipment; | ||
| c Equipment employing exclusively the direct current transmission technique; | ||
| d Electronic measuring equipment suitable for use with PCM transmission equipment defined in CCITT Recommendation series G.700 to 746 (ITU Geneva) for PCM up to 8.5 Megabits per second. | ||
| In this entry– | ||
| “data signalling rate” takes into account that, for non-binary modulation systems, “bauds” and “bits per second” are not equal. Bits for coding, checking and synchronisation should be included in the calculation of “bits per second”; and | ||
| “bandwidth”, for data communications equipment designed to operate in one voice channel, is 3,100 Hz and for voice frequency telegraph systems designed to International Telegraph and Telephone Consultative Committee (CCITT) and International Radio Consultative Committee (CCIR) standards “bandwidth” is the number of channels times the channel spacing. | ||
| IL1520 | Radio relay communication equipment and specially designed test equipment and software, the following– | |
| 1 Radio relay communication equipment designed for use at frequencies exceeding 960 MHz | A | |
| except | ||
| a Microwave radio links for fixed civil installations operating at fixed frequencies not exceeding 19.7 GHz, employing analogue transmission with a capacity of up to 2,700 voice channels of 4 kHz each or of a television channel of 6 MHz maximum nominal bandwidth and associated sound channels; | ||
| b Microwave radio links for fixed civil installations operating at fixed frequencies not exceeding 19.7 GHz, employing digital transmission techniques designed for operation at a total bit rate not exceeding 8.5 Mbit per second; | ||
| c Ground communication radio equipment for use with temporarily fixed services operated by civilian authorities and designed to be used at fixed frequencies not exceeding 15 GHz with a power output of not more than 5 W; | ||
| d TV-receive-only (TVRO) stations for satellite reception specially designed for use at fixed frequencies meeting ITU standards in civil television or sound radio systems in the following frequency ranges– | ||
| i S-band: 2.5 – 2.69 GHz | ||
| ii C-band: 3.4 – 4.2 GHz | ||
| iii kU-and kA-band: 4.5 – 4.8 GHz, 10.7 – 12.75 GHz | ||
| 2 Stand-alone radio transmission media simulators and channel estimators, and specially designed software therefor, specially designed for testing equipment specified in head (1) above, except those in which the adjustments are made only manually | A | |
| 3 Specially designed components and accessories for the equipment specified in heads (1) and (2) above | A | |
| IL1521 | Solid-state amplifiers and specially designed components and accessories having any of the following characteristics– | |
| 1 Exceeding a maximum output power of 2 kW at operating frequencies between 10 and 35 MHz inclusive | A | |
| 2 Exceeding a maximum output power of 50 W at operating frequencies between 35 and 400 MHz; or | A | |
| 3 A product of the maximum output power times the maximum operating frequency of more than 2 × 10u21u20 W.Hz at operating frequencies exceeding 400 MHz | A | |
| exceptSolid state amplifiers which: | ||
| a are specially designed for community television distribution systems; or | ||
| b have a bandwidth not exceeding 10 MHz. | ||
| In this entry– | ||
| “bandwidth” means the band of frequencies over which the power amplification does not drop to less than one-half of its maximum value. | ||
| IL1522 | Lasers and laser systems and specially designed parts and components therefor (including amplification stages) and any equipment containing lasers or designed to contain lasers, the following– | |
| 1 Lasers and specially designed components and parts therefor, | A | |
| except, save when specially designed for equipment specified in head (2) below, | ||
| a argon, krypton or non-tunable dye lasers, having one of the following sets of characteristics– | ||
| i an output wavelength between 0.2 and 0.8 micrometre, a pulsed output energy not exceeding 0.5 joule per pulse and an average or continuous-wave maximum rated single-or multi-mode output power not exceeding 20 W;or | ||
| ii An output wavelength between 0.8 and 1.0 micrometre, a pulsed output energy not exceeding 0.25 joule per pulse and an average or continuous-wave maximum rated single-or multi-mode output power not exceeding 10 W; | ||
| b helium-cadmium, nitrogen, and multi-gas lasers not specified elsewhere in this entry, having both the following characteristics– | ||
| i an output wavelength shorter than 0.8 micrometre; and | ||
| ii a pulsed output energy not exceeding 0.5 joule per pulse and an average or continuous wave maximum rated single-or multi-mode output power not exceeding 120 W; | ||
| c helium-neon lasers with an output wavelength shorter than 0.8 micrometre; | ||
| d ruby-lasers with both the following characteristics– | ||
| i an output wavelength shorter than 0.8 micrometre; and | ||
| ii a pulsed output energy not exceeding 20 joules per pulse; | ||
| e COd22, CO or CO/COd22 lasers with either of the following characteristics– | ||
| i an output wavelength in the range of 9 to 11 micrometres and a pulsed output energy not exceeding 2 joules per pulse and a maximum rated average single-or multi-mode output power not exceeding 1.2 kW or a continuous-wave maximum rated single– or multi-mode output power not exceeding 5.0 kW; or | ||
| ii an output wavelength in the range of 5 to 7 micrometres and having a continuous wave maximum rated single-or multi-mode output power not exceeding 50 W; | ||
| f Nd: YAG lasers having an output wavelength of 1.064 micrometres and either of the following characteristics– | ||
| i a pulsed output energy not exceeding 0.5 joules per pulse and a maximum rated average single-or multi-mode output power not exceeding 10 W or a continuous wave maximum rated single-or multi-mode output power not exceeding 50 W; or | ||
| ii a pulsed output energy not exceeding 10 joules per pulse with a pulse width not less than 50 microseconds and a maximum rated average single-or multi-mode output power not exceeding 50 W; | ||
| g Nd: Glass lasers having both the following characteristics– | ||
| i an output wavelength in the range of 1.05 to 1.06 micrometres; and | ||
| ii a pulsed output energy not exceeding 2 joules per pulse; | ||
| h tunable CW dye lasers having both the following characteristics– | ||
| i an output wavelength shorter than 0.8 micrometre; and | ||
| ii an output not exceeding an average or continuous wave maximum rated single-or multi-mode output power of 1 W; | ||
| i tunable pulsed lasers (for argon and krypton lasers see (a) above), including dye having all of the following characteristics– | ||
| i an output wavelength between 0.15 and 0.8 micrometre; | ||
| ii a pulse duration not exceeding 100 nanoseconds; | ||
| iii a pulsed output energy not exceeding 0.5 joule per pulse;and | ||
| iv an average power not exceeding 10 W; | ||
| j single-element semi-conductor lasers having a wavelength shorter than 1 micrometre and designed for and used in the video and audio reproducers, point of sale price scanners, electronic printers and electronic copiers referred to at sub-heads (2)(m), (n), (s) and (t) below. | ||
| 2 Laser systems and equipment containing lasers, and specially designed components therefor | A | |
| except the following systems and equipment containing lasers of the types excluded from head (1) above– | ||
| a equipment specially designed for industrial and civilian instrusion detection and alarm systems; | ||
| b equipment specially designed for medical applications; | ||
| c equipment for educational and laboratory purposes; | ||
| d equipment specially designed for traffic and industrial movement control and counting systems; | ||
| e equipment specially designed for the detection of environmental pollution; | ||
| f optical spectrometers and densitometers; | ||
| g equipment containing continuous wave helium-neon gas lasers, other than laser measuring systems described in head (3) below; | ||
| h equipment for cutting or bonding textiles; | ||
| i equipment for cutting paper; | ||
| j equipment containing lasers for drilling diamond dies for the wire drawing industry; | ||
| k electronic scanning equipment with auxiliary electronic screening unit specially designed for printing processes, including such equipment when used for the production of colour separations; | ||
| l laser-radar (lidar) equipment specially designed for surveying or meteorological observation; | ||
| m consumer-type reproducers for video or audio discs, employing non-erasable media; | ||
| n point of sale price scanners; | ||
| o equipment designed for surveying purposes if it is not capable of measuring range; | ||
| p equipment specially designed for the marking of components; | ||
| q specially designed gravure (printing plate) manufacturing equipment; | ||
| r equipment specially designed for visual entertainment purposes (laser light shows) provided it has no holographic capability; | ||
| s electronic printers including those capable of being used with digital computers, not exceeding 2000 lines (30 pages) per minute or 300 characters per second; | ||
| t electronic copiers, including those capable of being used with digital computers, not exceeding 30 pages per minute and which do not include any of the following– | ||
| i optical character recognition (OCR) equipment which is not specified in Group 3G, head (7); | ||
| ii digitising equipment which is not specified in Group 3G, head (7);or | ||
| iii image enhancement capability; | ||
| 3 Measuring systems which have both of the following characteristics– | A | |
| a contain a laser;and | ||
| b maintain for at least 48 hours over a temperature range .26610K around a standard temperature and at a standard pressure– | ||
| i a resolution over their full scale of .2660.1 micrometre or betterand | ||
| ii an accuracy of .266 1 part per million or better | ||
| 4 Particle measuring systems employing helium-neon lasers, designed for measuring particle size and concentration in gases, which have both of the following characteristics | A | |
| a capable of measuring particle sizes of 0.3 micrometre or less;and | ||
| b capable of characterising Class 10 clean air or better. | ||
| In this entry “tunable” means the ability of a laser to produce an output at any wavelength within its tunable range. A line-selectable laser which can operate only on discrete wavelengths is not considered tunable. | ||
| IL1526 | Cable, wire and optical fibres, and components and accessories, the following– | |
| 1 Cable (including coaxial cable, but excluding oil well logging cable) and wire, coated with or insulated with any of the materials specified in sub-head (1)(b) of the entry in Group 3I relating to fluorocarbon compounds | A | |
| 2 Other cable and optical fibres, the following– | ||
| a underwater communication cable, the following– | ||
| i reversed-twist, double-armoured cable specially designed for towing or suspending, and communicating with, submerged devices | A | |
| ii unarmoured or single-armoured ocean cable having an atenuation of 1.62 dB/km (3.0 dB per nautical mile) or less, measured at a frequency of 600 kHz | A | |
| b coaxial cable with an inner diameter of the outer conductor of the core greater than 14 mm, having– | ||
| i an air dielectric in which the spacing is accomplished by discs, beads, spiral, screw or any other means; | ||
| ii a foam dielectric and a solid copper or aluminium outer conductor | A | |
| c optical-fibre communication cable or optical fibres therefor, having any of the following characteristics– | ||
| i an attenuation at any operating wavelength of 3 dB/km or less | A | |
| ii optical fibres capable of withstanding a “proof test” tensile stress of 1.1 x 10u29 N/mu22 | A | |
| iii specially designed for underwater use | A | |
| iv specially designed to be insensitive to nuclear radiation | A | |
| d optical fibres for sensing purposes, having any of the following characteristics | A | |
| i specially fabricated either compositionally or structurally, or modified by coating, to be acoustically, thermally, inertially, electro-magnetically or nuclear radiation sensitive | A | |
| ii modified structurally or by coating to have either very low (“beat length” greater than 50 cm) or very high (“beat length” less than 5 cm) birefringence | A | |
| e secure communications cable, coaxial or multi-conductor, protected by mechanical or electrical means from physical damage or intrusion in such manner that communications security is maintained between terminals without the need for additional encoding and scrambling equipment, except cable which is only armoured by a tough outer sheath or screened electro-magnetically | A | |
| f components and accessories specially designed for the optical fibres or cable specified in this head, including fibre-optic bulkhead or hull penetration connectors impervious to leakage at any depth for use in ships or vessels, and multiport fibre-optic couplers | A | |
| except connectors for use with optical fibres or cable with a repeatable coupling loss of 0.5 dB or more. | ||
| In this entry– | ||
| “beat length” means the distance over which two orthogonally polarised signals, initially in phase, must pass in order to achieve 2 radians phase difference; and | ||
| “proof test” consists of on-line or off-line production screen testing that dynamically applies a prescribed tensile stress over a 0.5 to 3 m length of fibre at a running rate of 2 to 5 m per second while passing between capstans approximately 15 cm in diameter. The ambient temperature is a nominal 20°C and relative humidity a nominal 40%. | ||
| IL1527 | Cryptographic equipment and ancillary equipment (such as teleprinters, perforators, vocoders, visual display units) designed to ensure secrecy of information transmitted via communications media (such as telegraphy, telephony, facsimile, video and data communications) or of stored information, specially designed components therefor and software controlling or computers performing the functions of such cryptographic equipment | A |
| except simple cryptographic devices or equipment only ensuring the privacy of communication as follows– | ||
| a Equipment for voice transmission making use of fixed frequency inversions or fixed band scrambling techniques in which the transposition changes occur not more frequently than once every 10 seconds; | ||
| b Standard civil facsimile and video equipment designed to ensure the privacy of communications by an analogue transmission using non-standard practices for intended receivers only (video system equipment effecting the transposition of analogue data); | ||
| c Video systems for pay television and similar restricted audience television including industrial and commercial television equipment using other than standard commercial sweep systems; | ||
| This entry includes but is not limited to the following– | ||
| a video systems which use a digital transmission or digital techniques to modify an analogue transmission for video or facsimile secrecy; | ||
| b receivers and transmitters for spread spectrum and frequency agile systems which are more precisely defined in the entries in this Group relating to radio receivers and radio transmitters. | ||
| IL1529 | Electronic equipment for testing, measuring (eg time interval measurement), calibrating or counting, or for microprocessor/microcomputer development, the following– | |
| 1 Equipment designed as reference frequency standards for laboratory use and having either of the following characteristics– | ||
| a a long-term drift (ageing) over 24 hours or more of 1 part in 10u21u20 or better; or | A | |
| b a short-term drift (stability) over a period from 1 to 100 seconds of 1 part in 10u21u22 or better | A | |
| 2 Equipment designed for fixed ground or mobile use and containing a frequency standard or standards having either of the following characteristics– | ||
| a a long-term drift (ageing) over 24 hours or more of 1 part in 10u29 or better; or | A | |
| b a short-term drift (stability) over a period from 1 to 100 seconds of 1 part in 10u21u22 or better | A | |
| 3 Instruments designed for use at frequencies exceeding 18 GHz | A | |
| 4 Comb frequency generators designed and rated for use at frequencies exceeding 12.5 GHz | A | |
| 5 Instruments designed for use at frequencies exceeding 1 GHz, the following– | ||
| a swept-frequency network analysers, for the automatic measurement of complex equivalent circuit parameters over a range of frequencies | A | |
| b specially calibrated microwave instrumentation receivers capable of measuring amplitude and phase simultaneously | A | |
| c automatic frequency (heterodyne) converters and transfer oscillators | A | |
| d programmable instruments | A | |
| 6 Instruments having both of the following characteristics | A | |
| a user-accessible programmability; | ||
| b a user-alterable programme and data storage of more than 65,536 bit. | ||
| 7 Test instruments including digital circuit testers; logic state and/or timing analysers; bus analysers; serial data analysers; digital word generators with user-accessible programmability and having any of the following characteristics– | ||
| a specially designed to examine or compare one or more binary coded streams of electrical signals; | A | |
| b a maximum sampling rate of more than 100 MHz; | A | |
| c a maximum of more than 32 channels excluding a maximum of 6 qualifier channels; | A | |
| d a figure of merit of more than 400 where the figure of merit is defined as the product of the maximum sampling rate (in MHz) and the number of input channels (excluding qualifier channels); | A | |
| e a capability of state coupled timing analysis (ie synchronised mode state/timing analysis); | A | |
| f a total acquisition memory for word storage exceeding 32,768 bit with an acquisition memory for bit storage per channel exceeding 1,024 bit;or | A | |
| g a total acquisition memory for word storage exceeding 16,384 bit with an acquisition memory for bit storage per channel exceeding 2,048 bit | A | |
| except | ||
| i logic probes, logic pulsers, digital current tracers (current “sniffers”), signature analysers and other digital circuit testers for observing single events or providing stimuli at single test points; | ||
| ii logic clips and logic comparators; | ||
| iii digital word generators capable of operating at a maximum clock rate of 2 MHz or less with word lengths of 8 bit or less; | ||
| 8 Microprocessor or microcomputer development instruments or systems including accessories specially designed for microprocessor or microcomputer instruments or systems such as: cross-hosted assemblers, cross-hosted compilers; adapter interfaces for prototypes or emulation probes; debuggers; programmable read-only memory (PROM) programmers; programmable read-only memory (PROM) copiers; so-called “personality” modules capable of developing software or capable of programming microcircuits specified in the entry relating to electronic components in this Group | A | |
| except | ||
| microprocessor or microcomputer development instruments or systems which can be used to develop software for, or to programme, a family of microprocessor or microcomputer microcircuits not designed or produced in any country specified in Article 2(iv) where a family consists of microprocessor or microcomputer microcircuits which have the same architecture; the same basic instrument set;and the same basic technology, provided– | ||
| a the instruments or systems can be used only for microprocessor or microcomputer microcircuits having an operand (data) word length of less than or equal to 8 bit and not having an arithmetic logic unit (ALU) wider than 8 bit;and | ||
| b the family contains at least one microprocessor or microcomputer microcircuit which is not specified in the entry relating to electronic components in this Group. | ||
| 9 Digital counters, the following– | ||
| a counters capable of counting successive input signals with less than 5 nanoseconds time difference without prescaling (digital division) of the input signal; (for counter/timers having a time interval measurement mode, see also head (10) below) | A | |
| b counters employing prescaling of the input signal in which the prescaler is capable of resolving successive input signals in less than 1 nanosecond time difference | A | |
| c counters capable of measuring burst frequencies exceeding 100 MHz for a burst duration of less than 5 milliseconds | A | |
| 10 Time interval measuring equipment employing digital techniques, capable of measuring time intervals of less than 5 nanoseconds on a single shot basis | A | |
| 11 Testing equipment rated to maintain specified operating data over a range of ambient temperatures from below –25°C to above +55°C | A | |
| 12 Digital voltage measuring apparatus (with or without electrical outputs) irrespective of the physical units in which calibrated, with a reading speed (from zero to the measured value) faster than 25 accesses per second, except visual quantization apparatus capable of providing an average value, displayed or not, of the results of the measurement and multichannel analysers of all types used in nuclear experimentation and industrial telemeasuring devices in which a pre-set storage value is used as a basis for measuring, having any of the following characteristics– | ||
| a a digital resolution over the whole scale greater than 1 part in 200,000 (0.0005%) | A | |
| b an accuracy, measured without reference to an external standard, better than 1 part in 50,000 (0.002%) of reading over an ambient temperature range of .2665°C or more, or a stability better than 10u2–u26 of reading over a period of 24 hours or more | A | |
| or | ||
| c a capability of more than 500 independent measurements per second | A | |
| 13 Transient recorders, utilising analogue-to-digital conversion techniques, capable of storing transients by sequentially sampling single input signals at successive intervals of less than 50 nanoseconds | A | |
| 14 Specially designed software for the equipment in heads (1) to (13) inclusive | A | |
| In this entry– | ||
| “user accessible programmability” means that the user has the facility to insert, modify or replace programmes by means other than a physical change in the wiring or interconnections or the setting of function controls including entry of parameters; | ||
| “programme” means a sequence of instructions to carry out a process in or convertible into, a form executable by an electronic computer; | ||
| “reading speed” does not include changes in range or polarity. | ||
| IL1531 | Frequency synthesizers (any kind of frequency source or signal generator, regardless of the techniques used, providing a multiplicity of simultaneous or alternative output frequencies, from one or more outputs, controlled by, derived from or disciplined by a lesser number of standard, or master, frequencies) and equipment containing frequency synthesizers, the following– | |
| 1 Frequency synthesizers, the following– | ||
| a those containing frequency standards specified in heads (1) or (2) of the entry relating to electronic measuring, calibrating, counting, testing and time interval measuring equipment in this Group | A | |
| b those containing temperature-compensated crystal oscillators specified in head (3) of the entry relating to quartz crystals in this Group | A | |
| 2 Instrument frequency synthesizers and synthesized signal generators, designed for ground use, producing output frequencies whose accuracy and short and long term stability are controlled by, derived from, or disciplined by the input frequency or internal master standard frequency, and having any of the following characteristics: | ||
| a a maximum synthesized output frequency in excess of 550 MHz | A | |
| b any of the following noise characteristics– | ||
| i A single sideband (SSB) phase noise better than –120 dBc/Hz when measured at a 20 kHz offset from the carrier frequency; | A | |
| ii A single sideband (SSB) phase noise better than –106 dBc/Hz when measured at a 100 Hz offset from the carrier frequency; | A | |
| iii An integrated phase noise better than –60 dBc/Hz referred to a 30 kHz band centred on the carrier and excluding the 1 Hz band centred on this carrier; or | A | |
| iv An integrated AM phase noise better than –70 dBc/Hz referred to a 30 kHz band centred on the carrier and excluding the 1 Hz band centred on this carrier; | A | |
| except synthsized signal generators that fall under heads (2)(a) or (2)(b)(i) where the maximum synthesized output frequency is no more than 1400 MHz or the SSB phase noise is not less than –136 dBc/Hz when measured at an offset of 20 KHz from a carrier frequency of 100 MHz. | ||
| c electrically programmable in frequency (in that the output frequency can be controlled or selected by the injection of digitally coded electrical signals from an external control source) with a frequency switching time of less than 10 milliseconds | A | |
| d electrically programmable in phase (in that the phase of the output frequency can be varied relative to the internal or external reference standard, or selected in accordance with an externally supplied code or signal with a speed of switching from one selected phase value to another of less than 10 milliseconds), | A | |
| except those equipments incorporating pre-emphasis networks for frequency modulation. | ||
| e having a level of spurious components in the output, measured relative to the selected output frequency, better than –60 dB harmonic or –92 dB non harmonic; | A | |
| f more than 3 different selected synthesized output frequencies available simultaneously from one or more outputs | A | |
| g facilities for pulse modulation of the output frequency | A | |
| 3 Airborne communications equipment using frequency synthesizers, the following: | ||
| a equipment designed to receive or transmit frequencies greater than 156 MHz | A | |
| b equipment incorporating facilities for the rapid selection more than 200 channels per equipment, except equipments operating in the frequency range of 108 to 136 MHz incorporating facilities for the rapid selection of 720 channels or fewer at not less than 25 kHz channel spacing which have been in normal civil use for at least one year | A | |
| c equipment with a frequency switching time of less than 10 milliseconds | A | |
| d frequency synthesizers designed for any of the equipment specified in sub-heads (a) to (c) above (inclusive), whether supplied separately or with such equipment and exceeding the parameters defined for equipment specified in head (2) of this entry | A | |
| 4 Digitally-controlled radio receivers, whether or not computer-controlled, which search or scan automatically a part of the electro-magnetic spectrum, using frequency synthesizers, the following– | ||
| a digitally-controlled receivers in which the switching operation takes less than 10 milliseconds, except non-ruggedised digitally-controlled pre-set type radio receivers designed for use in civil communications, which have 200 selective channels or fewer | A | |
| b frequency synthesizers designed for the equipment specified in sub-head (a) above, whether supplied separately or with such equipment, and exceeding the parameters defined for equipment specified in head (2) of this entry, except those specially designed for the non-ruggedised receivers specified in sub-head (a) above | A | |
| 5 Radio transmitters incorporating transmitter drive units, exciters and master oscillators using frequency synthesis, the following– | ||
| a transmitters having!an output frequency of up to 32 MHz with a frequency resolution of better than 10 Hz and with a frequency switching time of less than 10 milliseconds | A | |
| b transmitters having an output frequency from 32 MHz to 235 MHz with a frequency resolution of better than 250 Hz and with a frequency switching time of less than 10 milliseconds | A | |
| c transmitters having an output frequency greater than 235 MHz | A | |
| except | ||
| i television broadcasting transmitters having an output frequency from 470 MHz to 960 MHz with a frequency resolution of not better than 1 kHz and where the manually-operated frequency synthesizer incorporated in or driving the transmitter has an output frequency not greater than 120 MHz; and | ||
| ii FM and AM ground communications equipment for use in the land mobile service and operating in the 420 to 470 MHz band with a power output of 50 W for mobile units and 300 W for fixed units with a frequency resolution of not better than 6.25 kHz and with a frequency switching time greater than 50 milliseconds; | ||
| iii Portable (personal) or mobile radiotelephone for civil use, e.g., for use with commercial civil cellular radiocommunications systems having all of the following characteristics: | A | |
| a Operating in the 420 to 960 MHz range; | ||
| b A power output of 10 W or less;and | ||
| c A “frequency switching time” of 10 ms or more. | ||
| d transmitters having more than three different selected synthesized output frequencies available simultaneously from one or more outputs | A | |
| e transmitters with facilities for pulse modulation of the output frequency of the transmitters or of the incorporated frequency synthesizer | A | |
| f frequency synthesizers designed for any of the equipments specified in sub-heads (a) to (e) above (inclusive), whether supplied separately or with such equipment, and exceeding the parameters specified in head (2) of this entry | A | |
| 6 Specially designed components and accessories for equipment specified in heads (2) to (5) above (inclusive) | A In this entry frequency switching time means the maximum time (i.e. delay), when switched from one selected output frequency to another selected output frequency, to reach– | |
| a A frequency within 100 Hz of the final frequency; or | ||
| b An output level within 1.0 dB of the final output level. | ||
| IL1532 | Precision linear and angular measuring systems, the following– | |
| 1 Contact-type systems and linear voltage differential transformers (LVDT) therefor, the following– | ||
| a contact-type measuring systems having all the following characteristics– | A | |
| i a range equal to or less than 5 mm; | ||
| ii a linearity equal to or better than .2660.1%; and | ||
| iii a drift equal to or less than 0.1% per day, at a standard ambient test room temperature .2661 K. | ||
| b linear voltage differential transformers with no compensation networks and having either of the following characteristics– | A | |
| i a range equal to or less than 5 mm; or | ||
| ii a linearity equal to or better than .2660.2%. | ||
| 2 Linear measuring machines, except optical comparators, with two or more axes having both the following characteristics– | A | |
| a a range in any axis greater than 200 mm; and | ||
| b an accuracy (including any compensation) less (finer) than .266 0.0008 mm per any 300 mm segment of travel. | ||
| 3 Angular measuring systems having an “accuracy” equal to or better than .2661 second of arc, except optical instruments using collimated light to detect angular displacements of a mirror | A | |
| 4 Non-contact type measuring systems having either of the following characteristics– | A | |
| a an effective probe measurement diameter less than 0.5 mm and a drift less than 0.5% per day, at a standard ambient test room temperature .2661 K; or | ||
| b a linearity better than 0.3% and a drift of less than 0.5% per day, at a standard ambient test room temperature .2661 K | ||
| 5 Contact-type measuring systems specially designed for combined, simultaneous linear-angular inspection of hemishells, having both of the following characteristics– | A | |
| a linear accuracy equal to or better than .266 0.005 mm in any 5 mm; and | ||
| b angular accuracy equal to or better than .2661 minute in any 90° of arc | ||
| 6 Specially designed components and specially designed software for equipment specified in heads (1) to (5) above (inclusive) | A | |
| In this entry– “accuracy” is usually measured in terms of inaccuracy. It is defined as the maximum deviation, positive or negative, of an indicated value from an accepted standard or true value. “linearity” is usually measured in terms of non-linearity. It is defined as the maximum deviation of the actual characteristic (average of upscale and downscale readings), positive or negative, from a straight line so positioned as to equalise and minimise the maximum deviations. | ||
| IL1533 | Signal analysers (including spectrum analysers), having any of the following characteristics– | |
| 1 Non-programmable and capable of operating at frequencies over 12.5 GHz | A | |
| 2 Programmable and capable of operating at frequencies over 1.0 GHz | A | |
| 3 Having a display bandwidth in excess of 125 MHz and capable of operating at frequencies over 2 GHz | A | |
| 4 Incorporating user accessible programmability and a user alterable programme and a data storage of more than 8,192 bit | A | |
| 5 Having either of the following characteristics for analysing frequencies greater than 1 GHz; | ||
| a including a scanning preselector, or | A | |
| b incorporating a tracking signal generator | A | |
| 6 Having an overall display dynamic range of better than 80 dB | A | |
| 7 Employing time compression of the input signal | A | |
| 8 Employing Fast Fourier Transform techniques | A | |
| and specially designed components, accessories and software for the equipment specified in heads (1) to (8) above (inclusive) | A | |
| In this entry Instruments are excepted if their “user accessible programmability” is provided by the “manufacturer” and is limited to– | ||
| a the replacement of fixed storage devices (eg ROM's)or | ||
| b the selection of preprogrammed functions from a menu. | ||
| IL1533 | For the purpose of this entry the “manufacturer” is the individual or organisation designing the instrument for the intended application (in contrast to an individual or organisation merely programming an instrument at, or in accordance with, a user’s request). | |
| IL1534 | Flatbed densitometers, and specially designed components therefor, the following– | |
| 1 Flatbed microdensitometers, except cathode-ray types, having any of the following characteristics | A | |
| a a recording or scanning rate exceeding 5,000 data points per second; | ||
| b a “figure of merit” less than 0.1; or | ||
| c an optical density range greater than 0 to 4. | ||
| 2 Specially designed components for the instruments specified in head (1) above | A | |
| In this entry “figure of merit” is the product of the density resolution expressed in density units and the spatial resolution expressed in micrometers. Density resolution is measured over the optical density range of the instrument. | ||
| IL1537 | Microwave, including millimetric wave, equipment, including parametric amplifiers, capable of operating at frequencies over 1 GHz (other than microwave equipment included in the entries relating to communications, navigation, direction finding and radar equipment; radio transmitters and components; radio relay communications equipment; and electronic measuring, calibrating, counting, testing and time interval measuring equipment), the following– | |
| 1 Rigid and flexible waveguides designed for use at frequencies in excess of 18 GHz | A | |
| 2 Waveguides having a bandwidth ratio greater than 1.7:1 | A | |
| 3 Waveguide components, the following– | ||
| a directional couplers having a bandwidth ratio greater than 1.7:1 and a directivity over the band of 20 dB or more | A | |
| b rotary joints capable of transmitting more than one isolated channel or having a bandwidth greater than 5% of the centre mean frequency, except rotary joints used in air traffic control equipment carrying combinations of frequencies suitable for secondary surveillance radar antennae co-mounted on a primary radar antenna and which do not have a bandwidth exceeding 5% of the centre mean frequency | A | |
| c magnetic, including gyro-magnetic, waveguide components | A | |
| d diode waveguide components, using diodes specified in the entry relating thereto | A | |
| 4 TEM mode devices using magnetic, including gyro-magnetic, properties, or using diodes specified in the entry relating thereto | A | |
| 5 TR and anti-TR tubes and specially designed components therefor, | A | |
| except those designed for use in waveguides and having any of the following characteristics, which are in normal use for ground or marine radar– | ||
| a operating at a peak power not exceeding 3 MW and at a frequency of 1.5 GHz or less; | ||
| b operating at a peak power not exceeding 1.2 MW and at a frequency over the range 1.5 GHz to 6 GHz; and | ||
| c operating at a peak power not exceeding 300 kW and at a frequency over the range 6 GHz to 10.5 GHz. | ||
| 6 Assemblies and sub-assemblies in which the isolating base material functions as a dielectric (as used in stripline, microstrip or slotline), except those specifically designed for use in civil television systems to meet ITU standards and using, as an isolation material, paper base phenolics, glass cloth melamine, glass cloth epoxy resin, polyethylene terephthalate or any other isolating material capable of withstanding an operating temperature not exceeding 150°C | A | |
| 7 Phased array antennae and sub-assemblies, designed to permit electronic control of beam shaping and pointing, and specially designed components therefor (including but not limited to duplexers, phase shifters and associated high-speed diode switches) | A | |
| except duplexers and phase shifters specifically designed for use in civil television systems or in other civil radar or communication systems not specified in Group 3F. | ||
| 8 Other antennae specially designed for operation at frequencies above 30 GHz having a diameter of less than 1 metre, and specially designed components therefor | A | |
| 9 Microwave assemblies or sub-assemblies having circuits fabricated by the same processes as used in integrated circuit technology, that include active circuit elements (see also the entries relating to acoustic wave devices in Group 3G; and electronic components, assemblies, sub-assemblies, and printed circuit boards and microcircuits in this Group) | A | |
| 10 Microwave assemblies or sub-assemblies which contain band pass or band stop filters and which are capable of operating at 3 GHz or greater | A | |
| except microwave assemblies, sub-assemblies or amplifiers (or combinations thereof) having all of the following characteristics– | ||
| a Fixed tube at the time of manufacture to operate only within the ITU satellite broadcasting band from 11.7 to 12.5 GHz; | ||
| b Not capable of being retuned to a new frequency band by the user;and | ||
| c Specially designed for use with, or in, civil television receivers. | ||
| 11 Amplifiers (see also the entry relating to solid-state broadband amplifiers in this Group) | A | |
| except microwave assemblies, sub-assemblies or amplifiers (or combinations thereof) having all of the following characteristics– | ||
| a Fixed tuned at the time of manufacture to operate only within the ITU satellite broadcasting band from 11.7 to 12.5 GHz; | ||
| b Not capable of being retuned to a new frequency band by the user;and | ||
| c Specially designed for use with, or in, civil television receivers. | ||
| 12 PIN Modulators (see also the entry relating to semi-conductor diodes in this Group) | A | |
| In this entry “ITU Standards” means the standards for civil television systems designed to International Telecommunication Union recommendations. | ||
| IL1541 | Cathode-ray tubes having any of the following characteristics– | |
| 1 a resolving power of 32 lines or more per mm using the shrinking raster method of measurement | A | |
| 2 with travelling wave, or distributed deflection structure, using delay lines or incorporating other techniques to minimise mismatch of fast phenomena signals to the deflection structure; or | A | |
| 3 incorporating microchannel plate electron multipliers | A | |
| except | ||
| cathode-ray tubes, having all of the following characteristics– | ||
| a microchannel-plate electron multipliers with a hole pitch of 25 micro-metres or more; | ||
| a tubes not ruggedised for military use; | ||
| c tubes having a horizontal sweep slower than 200 ns/cm; and | ||
| d the electron gun mounted parallel to the screen surface. | ||
| IL1542 | Cold cathode tubes, including Krytrons, whether gas-filled or not, operating in a manner similar to a spark gap, containing three or more electrodes and having all of the following characteristics– | A |
| 1 rated for an anode peak voltage of 2,500 V or more; | ||
| 2 rated for peak currents of 100 A or more; | ||
| 3 an anode delay time of 10 microseconds or less; and | ||
| 4 an envelope diameter of less than 25.4 mm. | ||
| IL1543 | Triggered spark gaps having an anode delay time of 15 microseconds or less and rated for a peak current of 3,000 A or more, and components specially designed therefor and equipment incorporating such devices | A |
| IL1544 | Semiconductor diodes and dice and wafers therefor (except those specified elsewhere in this Schedule, or those made from germanium, selenium or copper oxide), having any of the following characteristics– | |
| 1 Semiconductor diodes designed or rated for use at input or output frequencies above 12.5 GHz | A | |
| 2 Mixer and detector diodes designed or rated for use at input or output frequencies greater than 3 GHz | A | |
| except | ||
| a point contact diodes designed or rated for use at input or output frequencies of 12.5 GHz or less; | ||
| b Schottky diodes designed or rated for mixer use at input or output frequencies of less than 12.5 GHz and having a noise figure of more than 6.5 dB; | ||
| c Schottky diodes designed or rated for detector use at input or output frequencies of less than 12.5 GHz and having a minimum rated tangential sensitivity of worse than –45 dBm under unbiased conditions or worse than –50 dBm under biased conditions; | ||
| 3 Oscillator and amplifier devices such as Gunn, Impatt, Trapatt, TED and LSA, including those used for the direct conversion of DC to RF power, designed or rated for use at– | ||
| a output frequencies above 1 GHz, but not exceeding 4 GHz, with a peak power greater than 2 W or a maximum CW power greater than 200 mW, or | A | |
| b output frequencies above 4 GHz, but not exceeding 12.5 GHz, with a peak power greater than 1 W or a maximum CW power greater than 100 mW | A | |
| 4 Voltage variable capacitance diodes designed or rated for use at input or output frequencies greater than 1.7 GHz | A | |
| 5 Fast recovery diodes having either of the following characteristics– | ||
| a a rated maximum reverse recovery time of less than 1 nanosecond or rated for a stored charge of less than 25 pico-coulombs, or | A | |
| b both a rated forward rectified current over 5 amperes and a rated maximum reverse recovery time of less than 20 nanoseconds or a rated storage charge of less than 25 pico-coulombs | A | |
| 6 PIN diodes designed or rated for use at input or output frequencies above 1.7 GHz, with a peak power of more than 5 W or a maximum CW power of more than 500 mW | A | |
| 7 Non-coherent light-emitting diodes with a peak radiant intensity at a wavelength of greater than 1,000 nanometres | A | |
| 8 Dice and wafers for the semiconductor diodes specified in heads (1) to (7) above (inclusive) | A | |
| IL1545 | Transistors and dice and wafers therefor (except photo-transistors which are specified in the entry in this Group relating to photosensitive components), the following– | |
| 1 Transistors using a bulk semiconductor material other than germanium, silicon or gallium arsenide | A | |
| 2 Transistors using silicon as the bulk semiconductor material, the following– | ||
| a types having an operating frequency greater than 1.5 GHz | A | |
| b types having an operating frequency of 1.5 MHz or less, and a maximum collector dissipation exceeding 300 W | A | |
| c types having an operating frequency greater than 1.5 MHz and a maximum collector dissipation exceeding 250 W | A | |
| d types having an operating frequency greater than 200 MHz and a product of the operating frequency (in GHz) and the maximum collector dissipation (in W) exceeding 10 | A | |
| e majority carrier-type transistors, including but not limited to junction field-effect transistors (FETs) and metal-oxide semiconductor transistors (MOS),except field-effect transistors having– | ||
| i A maximum power dissipation of no more than 6 W and an operating frequency not exceeding 1.0 GHz; or | A | |
| ii A maximum power dissipation of no more than 1 W and an operating frequency not exceeding 2.0 GHz | A | |
| f Transistors based upon gallium arsenide and having any of the following characteristics– | ||
| 1 An operating frequency exceeding 1 GHz | A | |
| 2 A maximum power dissipation of more than 1 W; or | A | |
| 3 A noise figure of less than 3 dB | A | |
| In this entry “maximum collector dissipation” means the continuous dissipation measured under the optimum cooling conditions specified by the manufacturer; | ||
| “maximum operating frequency” in Hertz means f max = gm2 Ci where gm is the maximum transconductance in Siemens (mho) and Ci is the input capacitance in farads; and | ||
| “operating frequency” means the frequency used in measuring output power or power gain (Gpd2E, Gpd2B or Gpd2C). When these parameters are not specified, “operating frequency” means the frequency used in measuring gain bandwidth product “(fd2T)” or noise figure. | ||
| IL1547 | Thyristors and dice and wafers therefor, the following– | |
| 1 Thyristors designed for use in pulse modulators having a rated turn-on time of less than 1 microsecond where the rated peak current exceeds 150 A | A | |
| 2 Thyristors having a rated turn-off time of less than 1 microsecond | A | |
| 3 Thyristors having a rated turn-off time of 1 microsecond or more but less than 2.3 microseconds, except those having a rated peak current of 50 A or less and encapsulated in non-hermetically sealed packages | A | |
| 4 Thyristors having a rated turn-off time of from 2.3 microseconds to 10 microseconds (inclusive) and a figure of merit greater than 100 | A | |
| In this entry “figure of merit” is defined as the product of the repetitive peak off-state voltage (V DRM) in kV and the repetitive peak on-state current (I TRM) in A as shown on the thyristor data sheets. | ||
| In this entry the “turn-off time” for gate-turn-off thyristors is defined as the sum of the gate controlled delay time Td2Dd2Q and the gate controlled fall time Tfq to reach 10% of the initial on-state current. | ||
| IL1548 | Photosensitive components, including linear and focal plane arrays, the following– | |
| 1 Photosensitive components (including photodiodes, phototransistors, photothyristors, photoconductive cells and similar photosensitive components) having either of the following characteristics– | ||
| a a peak sensitivity at a wavelength longer than 1,200 nanometres or shorter than 190 nanometres; or | A | |
| b a peak sensitivity at a wavelength shorter than 300 nanometres and an efficiency of less than 0.1% relative to peak response at wavelengths longer than 400 nanometres | A | |
| except vacuum photodiodes specially designed for use in spectrophotometry having a peak response at a wavelength shorter than 300 nanometres. | ||
| 2 Semi-conductor photodiodes and phototransistors with a response time constant of 95 nanoseconds or less measured at the operating temperature for which the time constant reaches a minimum | A | |
| 3 Components specially designed or rated as electromagnetic (including laser) and ionised-particle radiation resistant | A | |
| 4 Linear and focal plane arrays (hybrid or monolithic) having any of the characteristics specified in heads (1) or (2) above, and specially designed components therefor | A | |
| 5 Dice and wafers for the components specified in heads (1) to (4) above (inclusive) | A | |
| except | ||
| a Germanium photo devices with a peak sensitivity at a wavelength shorter than 1,750 nanometres; | ||
| b Infrared single-element encapsulated photoconductive cells or pyroelectric detectors intended for civil applications and using any of the following– | ||
| i Evaporated lead sulphide; | ||
| ii Triglycine sulphate with a surface area of 20 mm or less; | ||
| iii Lead-lanthanum-zirconium titanate ceramic. | ||
| c Single-element encapsulated mercury-cadmium-telluride (HgCdTe) uncooled (295 K ambient temperature operation) photo-electromagnetic (pem) or photoconductive (pc) mode photo detectors with a peak sensitivity at a wavelength shorter than 11,000 nanometres. | ||
| In this entry “time constant” means the time taken from the application of a light stimulus for the current increment to reach a value of 1–1/e times the final value (63% of the final value). | ||
| IL1549 | Photomultiplier tubes, the following– | |
| 1 Those for which the maximum sensitivity occurs at wavelengths shorter than 300 nanometres | A | |
| 2 Those having an anode pulse rise time of less than 1 nanosecond | A | |
| 3 Those containing microchannel plate electron multipliers | A | |
| except photomultiplier tubes specially designed for use in spectrophotometry having a peak sensitivity at a wavelength shorter than 300 nanometres. | ||
| IL1553 | X-Ray systems, flash discharge type, including tubes, having all of the following characteristics– | A |
| 1 Peak power greater than 500 MW; | ||
| 2 Output voltage greater than 500 kV; and | ||
| 3 Pulse width less than 0.2 microsecond. | ||
| IL1555 | Electron tubes except commercial standard television/video camera tubes not having fibre optic faceplates, and commercial standard X-ray amplifier tubes, the following– | |
| 1 those for image conversion or intensification incorporating any of the following– | ||
| a fibre-optic face-plates specified in head (1) of the entry in this Group relating to optical elements; | A | |
| b microchannel plate electron multipliers; or | A | |
| c gallium arsenide or other epitaxially grown semi-conductor photocathodes specified in head (3) of the entry in this Group relating to optical elements. | A | |
| 2 those for television/video cameras having any of the following characteristics– | ||
| a incorporating fibre-optic face-plates specified in head (1) of the entry in this Group relating to optical elements; | A | |
| b incorporating microchannel plate electron multipliers; or | A | |
| c coupled with electronic tubes specified in sub-head (1) of this entry | A | |
| 3 Ruggedised electron tubes for television/video cameras having a maximum length-to-bulb diameter ratio of 5:1 or less | A | |
| 4 specially designed components for the electron tubes specified in heads (1) to (3) above (inclusive) | A | |
| IL1556 | Optical elements and elements for optical tubes, the following– | |
| 1 Non-flexible fused fibre optic plates or bundles, having a fibre pitch (centre to centre spacing) of less than 10 micrometres; a light-absorbing medium surrounding each fibre or interstitially placed between fibres; and a diameter greater than 13 mm | A | |
| 2 Microchannel plates for electron image amplification, having 15,000 or more hollow tubes per plate; and a hole pitch (centre to centre spacing) of less than 25 micrometres | A | |
| 3 Semi-transparent photocathodes incorporating epitaxially grown layers of compound semi-conductors, such as gallium arsenide | A | |
| 4 Diffractive type optical elements specially designed for display screens, having any of the following characteristics– | ||
| a a transmission of more than 90% outside the reflection band and a reflection of more than 75% inside the reflection band, which has less than 15 nanometres bandwidth and is matched to the frequency of the display light source; | A | |
| b a rear projection screen brightness gain of more than 10 times the gain of a Lambertian scatterer with an equivalent area, and less than 10% variation in brightness across the exit aperture; or | A | |
| c specially designed for use in helmet-mounted displays | A | |
| IL1558 | Valves and cathodes, the following– | |
| 1 Valves in which space charge control is utilised as the primary functional parameter, the following– | ||
| a valves rated for continuous wave operation above 4 GHz at the maximum rated anode dissipation | A | |
| b valves rated for continuous wave operation within the frequency range 0.3 GHz to 4 GHz and for which (under any condition of cooling) the product of the maximum rated anode dissipation (expressed in W) and the square of the maximum frequency (expressed in GHz) at the maximum rate anode dissipation is greater than 10u24 | A | |
| except | ||
| --- | --- | --- |
| valves specially designed for television transmitters operating in the frequency range 0.47 GHz to 0.96 GHz and rated for operation without a grid current, for which the product of the rated anode dissipation (expressed in W) and the square of the maximum frequency (expressed in GHz) is not greater than 2 × 10u24; | ||
| c valves rated only for pulse operation above 1 GHz, with maximum peak pulse output power greater than 45 kW | A | |
| d valves rated only for pulse operation between 0.3 and 1 GHz and for which (under any condition of cooling), the product of the peak pulse output power (expressed in W) and the square of the maximum frequency (expressed in GHz) is greater than 4.5 × 10u24 | A | |
| e valves, specially designed for use as pulse modulators for radar or similar applications, the following– | ||
| i having a peak anode voltage rating of 100 kV or more | A | |
| ii rated for a peak pulse power of 20 MW or more | A | |
| (see also the entry in this Group relating to pulse modulators); | ||
| 2 Valves which utilise interaction between a beam of electrons and microwave elements and in which the electrons travel in a direction perpendicular to the applied magenetic field, including but not limited to magnetrons, crossed-field amplifier valves and crossed-field oscillator valves | A | |
| except | ||
| a fixed frequency and tunable pulsed magnetrons and crossed-field amplifier valves, the following– | ||
| i magnetrons designed to operate at frequencies below 3 GHz with a maximum rated peak output power of 5 MW or less; | ||
| ii magnetrons designed to operate at frequencies of between 3 GHz and 12 GHz if the product of the maximum rated peak output power (expressed in kW) and the frequency (expressed in GHz) is less than 4,200 and the “frequency tuning time” is more than 100 milliseconds; and | ||
| iii crossed-field amplifier valves designed to operate at frequencies below 4 GHz with a maximum rated peak output power of 1.2 MW or less and a gain of less than 15dB; | ||
| In this entry “frequency tuning time” is the time required to change the operating frequency from a starting frequency, through the maximum frequency, through the minimum frequency, and return to the starting frequency, ie one complete tuning cycle. | ||
| b fixed frequency continuous wave magnetrons designed for medical, industrial heating or cooking purposes, operating at a frequency of 2.375 GHz .266 0.05 GHz, or 2.45 GHz .266 0.05 GHz with a maximum rated output power not exceeding 6 kW, or at a frequency lower than 1 GHz with a maximum rated power output not exceeding 25 kW; | ||
| 3 Valves which utilise the interaction between a beam of electrons and microwave elements or cavities and in which the electrons travel in a direction parallel to the applied magnetic field, including but not limited to klystrons and travelling wave tubes, | A | |
| except | ||
| a continuous wave valves designed for half an octave or lesser bandwidth (where the highest operating frequency is equal to or less than 1.5 times the lowest operating frequency) and having all the following characteristics– | ||
| i designed to operate below 20 GHz; | ||
| ii the product of the rated output power (expressed in W) and the frequency (expressed in GHz) is less than 300; | ||
| iii no multiple grid electron guns; and | ||
| iv collectors with no more than two depressed stages; | ||
| b pulsed valves designed for half an octave or lesser bandwidth having collectors with no more than two depressed stages and having either of the following characteristics– | ||
| i peak saturated output power not exceeding 1 kW and average power not exceeding 40 W at or below 10 GHz; or | ||
| ii peak saturated output power not exceeding 100 W and average power not exceeding 20 W at frequencies between 10 and 20 GHz; | ||
| c pulsed valves designed for fixed frequency operation at frequencies less than 3.5 GHz, having a peak output power of 1.6 MW or less and an operating bandwidth less than one per cent; and | ||
| d valves used as fixed-frequency or voltage-tunable oscillator valves designed to operate at frequencies below 20 GHz with a maximum output power of less than 3W; | ||
| 4 Valves which utilise interaction between an electron beam and microwave elements or cavities but do not require a magnetic field to control or focus the electron beam, except low power reflex oscillator klystrons designed to operate at frequencies below 20 GHz and at a maximum output power of less than 3 W | A | |
| 5 Valves which utilise interaction between a beam of electrons and microwave elements or cavities in which the electrons drift in a direction parallel to the applied magnetic field but also require for their operation a large component of velocity transverse to the direction of the applied magnetic field, including but not limited to gyrotrons, ubitrons and peniotrons | A | |
| 6 Valves designed to withstand on any axis an acceleration of short duration (shock) greater than 1,000 g | A | |
| 7 Valves designed for operation in ambient temperatures exceeding 200°C | A | |
| 8 Valves specified in sub-heads (3), (4) or (5) above which are designed to operate with no filament or cathode heating element | A | |
| 9 Valves which use a modulated beam of electrons striking one more semiconductor diodes to provide power gain (see also the entry in this Group relating to semiconductor diodes) | A | |
| 10 Cathodes for electronic vacuum tubes, the following– | ||
| a specially designed for tubes specified in sub-heads (1) to (9) above; or | A | |
| b impregnated cathodes capable of producing a current density exceeding 0.5 A/cmu22 at rated operating conditions | A | |
| 11 specially designed components for the valves specified in this entry | A | |
| except valves specified in heads (1) and (3) above, specially designed for civil telecasting according to CCIR or OIR standards. | ||
| IL1559 | Hydrogen/hydrogen isotope thyratrons of ceramic metal construction, and accessories therefor, having any of the following characteristics– | |
| 1 a peak pulse power output of 20 MW or more | A | |
| 2 a peak anode voltage of more than 25 kV or | A | |
| 3 a peak current rating of more than 1.5 kA | A | |
| Note: for thyratrons rated for both single shot (crowbar) and modulator service, the figure for modulator service should be used. | ||
| IL1560 | Capacitors designed for or capable of maintaining their rated electrical or mechanical characteristics during their specified operating lifetime, the following– | |
| 1 Monolithic ceramic capacitors (other than boundary layered capacitors) using non-ferro-electric strontium titanate (SrTiOd23) dielectric rated for operation over the whole range of ambient temperatures from below –55°C to above + 85°C | A | |
| 2 Other capacitors rated for operation at ambient temperatures below –55°C or above + 200°C | A | |
| See also the entry in Group 4 relating to technology for the design and production of tantalum capacitors. | ||
| IL1561 | Materials specially designed and manufactured for use as absorbers of electromagnetic waves having frequencies greater than 2 × 10u28 Hz, and less than 3 × 10u21u22 Hz | A |
| except the following– | ||
| 1 Hair type absorbers, whether constructed of natural or synthetic fibres, with non-magnetic loading to provide absorption; | ||
| 2 Absorbers whose incident surface is non-planar in shape, including pyramids, cones, wedges and convoluted surfaces, and which have no magnetic loss; and | ||
| 3 Absorbers whose incident surface is planar and which are either plastic foam materials (flexible or non-flexible) with carbon loading to provide absorption, or organic binders with magnetic material loading which provide resonant absorption performance, being absorbers or binders having both of the following characteristics– | ||
| a a tensile strength of less than 7 × 10u26 N/mu22 (1,016 psi) and a compressive strength of less than 14 × 10u26 N/mu22 (2,032 psi); and | ||
| b not capable of withstanding temperatures higher than 176°C. | ||
| In this entry, “resonant absorption performance” is defined as less than 5% echo compared with metal over a bandwidth of not more than .26615% of the centre frequency of the incident energy. | ||
| IL1564 | Electronic component assemblies, modules, printed circuit boards with mounted components, substrates and integrated circuits, including packages therefor, the following– | |
| 1 Substrates for printed circuit boards including ceramic substrates and coated metal substrates (single-sided, double-sided or multilayer), and thin copper foils therefor | A | |
| except: | ||
| a printed circuit boards manufactured from any of the following materials: | ||
| i paper base phenolics; | ||
| ii glass cloth melamine; | ||
| iii glass epoxy resin uncoated or coated with copper foil of a thickness of 18 micrometres (0.00071 inch) or greater; | ||
| iv polyethylene terephthalate; | ||
| v any other insulating material having all of the following characteristics– | ||
| a a maximum continuous rated operating temperature not exceeding 423 K (150°C); | ||
| b a dissipation factor equal to or greater than 0.009 at 1 MHz | ||
| c a relative dielectric constant equal to or less than 8 at 1 MHz; and | ||
| d a coefficient of expansion equal to or greater than .26610u2–u25 K over a temperature range of 273 K to 393 K (0 to 120°C); | ||
| b ceramic substrates having not more than two layers of interconnections, including the ground plane; | ||
| c copper foil having a thickness of 18 micrometres (0.00071 inch) or greater. | ||
| 2 Ceramic packages for integrated circuits which are designed for hermetically sealed pin or pad grid array, leadless carrier or surface-mounted configurations | A | |
| except those having all of the following characteristics– | ||
| a single-in-line, dual-in-line or flat-pack configuration; | ||
| b pin, pad or lead spacings of 2.5 mm or more or 100 mils or more; and | ||
| c 40 leads or less. | ||
| 3 Assemblies, modules and printed circuit boards with mounted components, the following: | ||
| a those containing substrates for printed circuit boards specified in head (1) above | A | |
| b those containing microprocessor, micro-computer or memory microcircuits or other components specified elsewhere in this Group, | A | |
| except | ||
| i assemblies incorporating components specified in this Group but which components are capacitors; | ||
| ii power supply assemblies; | ||
| iii assemblies, modules and printed circuit boards with mounted components designed for equipment not otherwise specified in this Schedule and which, by nature of their design, performance, lack of user accessible programmability, lack of user-accessible microprogrammability, software, microprogramme control or specialised logic control, are substantially restricted to the particular application for which they have been designed. | ||
| For assemblies, modules or printed circuit boards with mounted components which are designed for, or which have the same functional characteristics as electronic computers or related equipment, see IL 1565. | ||
| Assemblies, modules or printed circuit boards with mounted components which are designed for, or have the same functional characteristics as, equipment specified in this schedule shall be rated against the parameters of appropriate equipment items. In such cases, however, the relevant temperature parameters have to be changed into below 218 K (–55°C) or above 358 K (85°C). | ||
| 4 Microcircuits (monolithic integrated circuits, microprocessor, microcomputer, multichip, hybrid, film or integrated optical types), | A | |
| except | ||
| a encapsulated passive networks; | ||
| b encapsulated integrated circuits (other than those designed or rated as radiation hardened and other than those rated for operation below –40°C or above +85°C) packaged in TO–5 outline cases (7.7 to 9.4 mm diameter) or in non-hermetically sealed cases, the following– | ||
| i bipolar monolithic integrated circuits having all the following characteristics– | ||
| a encapsulated in a package having 24 terminals or less; | ||
| b a basic gate propagation delay time not less than 3 nanoseconds; | ||
| c designed to perform a single digital logic function or a combination of digital logic functions; | ||
| d a basic gate power dissipation of no less than 2m W; | ||
| e a product of the basic gate propagation delay time and the basic gate power dissipation per gate of no less than 30 pJ for types having a basic gate propagation delay time of 3 nanoseconds or more and less than 5 nanoseconds. | ||
| ii bipolar monlithic integrated circuits, the following: | ||
| switches, electronic, externally controlled by inductive, optical or magnetic means, including threshold value switches, with switching times of 0.5 microsecond or more, designed for civil applications. | ||
| iii complementary metal-oxide semi-conductor (CMOS) monolithic integrated circuits designed for operation as digital logic circuit elements, the following– | ||
| gates, inverters, buffers, flip-flops, latches, multivibrators, bilateral switches, display drivers, fixed counters, fixed frequency dividers, storage registers, decoders, voltage translators, encoders, Schmidt-triggers, delay timers, carry generators or clock generators, or any combination of the above digital logic functions, having both of the following characteristics– | ||
| a encapsulated in a package having 24 terminals or less; | ||
| b a minimum value of the basic gate propagation delay time under any rated conditions of not less than 10 nanoseconds; | ||
| iv Positive-channel type or negative-channel type metal oxide semiconductor (PMOS or NMOS) having all of the following characteristics– | ||
| a specially designed for use as serial digital shift registers; | ||
| b a maximum clock rate of 10 MHz; and | ||
| c a maximum number of bit per package of 1024. | ||
| v silicon microcomputer microcircuits other than bit-slice microcomputer microcircuits, having all of the following characteristics– | ||
| a a word size to speed ratio of less than or equal to 1.1 bit per microsecond; | ||
| b a speed-power dissipation product of greater than or equal to 1.2 microjoules; | ||
| c an on-chip read-only storage (ROM), not including the microprogramme of less than or equal to 4,096 byte; | ||
| d an on-chip random-access memory (RAM) of less than or equal to 128 byte; | ||
| e containing no programmable read-only storage (PROM); | ||
| f an operand (data) word length of less than or equal to 8 bit; | ||
| g not capable of using off-chip storage for programme storage; | ||
| h not containing multiplication capabilities, general purpose operating systems or high order languages; | ||
| i not rated for operation below 253 K (– 20°C) or above 348 K (+75°C); and | ||
| j mask programmed by the manufacturer for a civil application; | ||
| vi silicon microprocessor microcircuits, other than bit-slice microprocessors, having all of the following characteristics– | ||
| a a word size to speed ratio of less than or equal to 1.25 bit per microsecond; | ||
| b a speed-power dissipation product of greater than or equal to 2 microjoules; | ||
| c containing no on-chip ROM or PROM; | ||
| d containing on-chip RAM of less than or equal to 1,024 bit; | ||
| e capable of addressing off-chip memory not greater than 65,536 byte; | ||
| f an operand (data) word length of less than or equal to 8 bit and not having an arithmetic logic unit (ALU) wider than 8 bit; | ||
| g not containing multiplication instructions; and | ||
| h not rated for operation below 253 K (–20°C) or above 348 K (75°C); | ||
| In sub-heads (b) (v) and (b) (vi) “speed” in each case means the time to fetch an operand C and another operand D, both from an external storage outside any work register, add these operands and put the result back in storage; and | ||
| “speed-power dissipation product” in each case means the product of the speed and the typical value of the power dissipation, at the clock frequency used in the speed calculation; | ||
| vii storage monolithic integrated circuits or multichip integrated circuits, the following– | ||
| a Read-only (ROMs), having all of the following characteristics–(i)Mask programmed by the manufacturer for a civil application prior to shipment;(ii)A maximum of 8,192 bit per package;(iii)A maximum access time of not less than 450 nanoseconds;(iv)Not rated for operation at an ambient temperature below 253 K (–20°C) or above 348 K (75°C); | ||
| b Positive-channel type or negative-channel type metal-oxide semiconductor read-only (PMOS – or NMOS-ROMs), having all of the following characteristics–(i)Mask programmed by the manufacturer for a civil application prior to shipment;(ii)A maximum of 32,768 bit per package;(iii)A maximum access time of not less than 450 nanoseconds;(iv)Not rated for operation at an ambient temperature below 253 K (–20°C) or above 348 K (75°C); | ||
| c Positive-channel type or negative-channel type metal-oxide semiconductor read-only (PMOS – or NMOS-ROMs), having all of the following characteristics–(i)Mask programmed or designed as character generators for a standard character font;(ii)A maximum access time of not less than 250 nanoseconds;(iii)Not rated for operation at an ambient temperature below 253 K (–20°C) or above 348 K (75°C); | ||
| d Programmable (non-erasable) read-only (PROMs) having all of the following characteristics–(i)Programmed by the manufacturer for a civil application prior to shipment;(ii)A maximum of 2,048 bit per package;(iii)A maximum access time of not less than 250 nanoseconds;(iv)Not rated for operation at an ambient temperature below 253 K (–20°C) or above 348 K (75°C); | ||
| e Programmable (non-erasable) read-only (PROMs) having all of the following characteristics–(i)Programmed by the manufacturer for a civil application prior to shipment;(ii)A maximum of 8,192 bit per package;(iii)A maximum access time of not less than 450 nanoseconds;(iv)Not rated for operation at an ambient temperature below 253 K (–20°C) or above 348 K (75°C); | ||
| f Bipolar random-access (RAMs), having any of the following pairs of characteristics–(i)A maximum of 64 bit per package and a maximum access time of not less than 30 nanoseconds;(ii)A maximum of 256 bit per package and a maximum access time of not less than 40 nanoseconds;(iii)A maximum of 1,024 bit per package and a maximum access time of not less than 45 nanoseconds; | ||
| g Metal-oxide semiconductor dynamic random access (MOS-DRAMs), having all of the following characteristics:(i)A maximum of 4,096 bit per package;(ii)A maximum access time of not less than 250 nanoseconds;(iii)Not rated for operation at an ambient temperature below 253 K (–20°C) or above 348 K (75°C); | ||
| h Metal-oxide semiconductor static randon access (MOS-SRAMs), having both of the following characteristics–(i)A maximum of 1,024 bit per package;(ii)A maximum access time of not less than 450 nanoseconds; | ||
| viii monolithic or hybrid integrated circuits, the following– | ||
| a non-reprogrammable circuits, not capable of addressing external memory, specially designed for, and which by virtue of circuit design are normally limited to use in simple calculators which perform a single function in response to a keystroke, and are capable of performing a floating point addition of 13 decimal digits (mantissa only) or less in not less than 20 milliseconds: | ||
| b non programmable circuits specially designed for, and which by virtue of circuit design are normally limited to use only in simple key programmable calculators having both the following characteristics–(i)capable of executing a sequence of not more than 256 programme steps introduced into a programme memory on the chip by a sequence of keystrokes; and(ii)capable of performing a floating point addition of 13 decimal digits (mantissa only) or less in not less than 20 milliseconds; | ||
| ix Peripheral positive–channel type or negative–channel type metal-oxide semiconductor (PMOS or NMOS) monolithic integrated circuits or multichip integrated circuits, designed only for: | ||
| a the support of microprocessor microcircuits which are specified in subhead 4(b)(v) above | ||
| and | ||
| b any of the following functions:(i)Parallel input/output controller (PIO)(ii)Serial input/output controller (SIO)(iii)Dual asynchronous receiver/transmitter (DART)(iv)Counter-timer circuit (CTC) | ||
| x amplifier integrated circuits the following– | ||
| a untuned AC amplifier circuits having a bandwidth of less than 3 MHz and a maximum rated power dissipation of 5 W or less at an ambient temperature of 298 K (25°C); | ||
| b audio amplifier microcircuits having a maximum rated continuous power output of 50 W or less at an ambient temperature of 298 K (25°C); | ||
| c operational amplifier microcircuits having all of the following characteristics– i a typical unity-gain open loop bandwidth of not more than 5 MHz; ii a typical open-loop voltage gain of not more than 10u26, i.e. 120 dB; iii either a maximum intrinsic rated input offset voltage of not less than 1 mV, or a maximum input offset voltage drift of not less than 5 microvolts per K (°C); iv a typical slew rate at unity gain not exceeding 6 V/microsecond provided that, for microcircuits having a typical slew rate, at unity gain, greater than 2.5 microvolts/second, the typical power dissipation is greater than 10 milliwatts per amplifier; v isolation amplifier microcircuits; vi instrumentation amplifier microcircuits having all of the following characteristics– a a best case rated linearity of not better than .266 0.01% at a gain of 100; b a maximum gain-bandwidth product not greater than 7.5 (expressed in MHz) and c a typical slew rate at unity gain not exceeding 3 V/microsecond; | ||
| xi analogue multiplier or divider integrated circuits having both the following charactersistics– | ||
| a a best case rated non-linearity of not better than .266 0.5% of full scale; and | ||
| b a –3 dB small-signal bandwidth of not more than 1 MHz; | ||
| xii voltage integrated circuits, whether or not rated for operation above + 85°C, the following– | ||
| a voltage reference circuits having both of the following characteristics– i a rated accuracy of no better than .266 0.1%; and ii a temperature coefficient of voltage not less than 15 x 10u2–u26/K or | ||
| b voltage comparator microcircuits having both the following characteristics– i a maximum input offset voltage of not less than 2 mV; and ii a typical switching speed of not less than 30 nanoseconds; | ||
| c linear type voltage regulators having both the following characteristics– i a rated nominal output voltage of 50 V or less; and ii a maximum output current of 2 A or less; | ||
| d switching type voltage regulators having both the following characteristics– i a rated nominal output voltage of 40 V or less; and ii a maximum output current of 150 mA or less; | ||
| xiii bipolar microcircuits designed for operation in civil applications as externally controlled (by inductive, magnetic or optical means) electronic switches or as threshold value switches with switching times of 0.5 microsecond or greater; | ||
| xiv non-coherent light-emitting alphanumeric displays not incorporating a monolithic integrated circuit; | ||
| xv non-coherent light-emitting alphanumeric displays incorporating a monolithic integrated circuit used for decoding, controlling and/or driving that display, provided that the integrated circuit is not integral with the actual display device; | ||
| xvi simple encapsulated photo-coupler (transopter) circuits with electrical input and output and which incorporate non-coherent light-emitting diodes; | ||
| xvii interface integrated circuits, the following– | ||
| a line drivers and line receivers, having a typical propagation delay time from data input to output of not less than 15 nanoseconds; | ||
| b peripheral and display drivers having all of the following characteristics– i a maximum rated output current of 500 mA or less; ii a typical propagation delay time from data input to output of not less than 20 nanoseconds; and iii a maximum rated output voltage of 80 V or less; | ||
| c sense amplifiers having both the following characteristics– i a typical propagation delay time from data input to output of not less than 15 nanoseconds; and ii a typical input threshold voltage of not less than 10 mV; | ||
| d storage or clock drivers having all of the following characteristics– i a maximum rated output current of 500 mA or less; ii a maximum rated output voltage of 30 V or less; and iii a typical propagation delay time from data input to output of not less than 20 nanoseconds; | ||
| xviii voltage-to-frequency converter circuits not employing delta or delta/sigma modulation techniques, having both the following characteristics– | ||
| a a rated accuracy of not better than .266 0.01% of full scale; | ||
| b a gain drift not less than .266 50 x 10u2–u26/K at rated frequency; | ||
| xix Rms-to-dc voltage converter circuits; | ||
| xx analogue-to-digital and digital-to-analogue converter integrated circuits (other than coder, decoder or coder/decoder (codec) microcircuits specially designed for voice), the following– | ||
| a analogue-to-digital converter circuits having both the following characteristics–(i)a maximum conversion rate to rated accuracy of no more than 50,00 complete conversions per second, ie a conversion time to maximum resolution of no less than 20 microseconds; and(ii)an accuracy of not better than 0.025% of full scale over the specified operating temperature range; | ||
| b digital-to-analogue converter circuits having both the following characteristics– i a maximum settling time to rated linearity of not less than 5 microseconds for “voltage output” and not less than 250 nanoseconds for current output converters; and ii a non-linearity of not better than .266 0.025% of full scale over the specified operating temperature range; | ||
| c analogue-to-digital converters microcircuits specially designed for digital voltmeter applications and permitting characteristics corresponding to those of instruments not specified in head (12) of the entry in this group relating to electronic measuring equipment. | ||
| xxi Silicon monolithic integrated circuits, microcomputer microcircuits, microprocessor microcircuits, multichip integrated circuits, film type integrated circuits, hybrid integrated circuits or optical integrated circuits having all of the following characteristics– | ||
| a no user-accessible microprogrammability;and | ||
| b designed or programmed by the manufacturer for any of the following applications only– i car electronics (eg entertainment, instrumentation, safety, comfort, operations or pollution); ii home electronics (eg audio and video equipment), appliances, safety, education, comfort, remote controlled toys or amusement; iii timekeeping applications (eg watches or clocks); iv personal communications up to 150 MHz, including amateur radio communication and intercom; v cameras including cine cameras but excluding imaging micro-circuits;or vi medical electronic prostheses (eg cardiac pacemakers, hearing aids); | ||
| xxii timing integrated circuits having both of the following characteristics– | ||
| a a typical timing error of not less than .266 0.5%; and | ||
| b a typical rise time of not less than 100 nanoseconds; | ||
| xxiii sample and hold integrated circuits having both of the following characteristics– | ||
| a an acquisition time of not less than 10 microseconds; and | ||
| b a maximum non-linearity error equal to or not worse than .266 0.01% of full scale for a hold time of 1 microsecond; | ||
| 5 Unencapsulated silicon based integrated circuits which are not designed or rated as radiation hardened and which are– | ||
| a bipolar monolithic integrated circuits having all of the following characteristics– | ||
| i designed to perform a single digital logic function or a combination thereof; | ||
| ii a basic gate propagation delay time not less than 5 nanoseconds; | ||
| iii a product of the basic gate propagation delay time (in nanoseconds) and the basic gate power dissipation per gate (in milliwatts) not less than 70 pJ and; | ||
| iv not more than 24 input/output pads. | ||
| b bipolar monolithic integrated circuits having all of the following characteristics– | ||
| i designed for operation in civil applications; | ||
| ii being electronic switches, externally controlled by inductive, magnetic or optical means; | ||
| iii being threshold valve switches; | ||
| iv with switching times of 0.5 micro-seconds or more; and | ||
| v not more than 24 input/output pads. | ||
| c Monolithic integrated circuits having all of the following characteristics– | ||
| i no “user-accessible microprogrammability”; | ||
| ii designed for and by virtue of circuit design limited to use in civil radio or television receivers; | ||
| iii rated for operation at 11 MHz or less; | ||
| iv not designed for station scanning applications; | ||
| v not utilising charge-coupled device (CCD) technology; | ||
| vi not intended for beam lead bonding;and | ||
| vii if intended for video or luminance amplifiers, having a maximum rated supply voltage not exceeding 30 V; and a typical bandwidth not exceeding 7.5 MHz; | ||
| d “Monolithic integrated circuits” having all of the following characteristics– | ||
| i no “user-accessible microprogrammability”; | ||
| ii not utilising charge-coupled device (CCD) technology; | ||
| iii not intended for beam lead bonding;and | ||
| iv designed or programmed by the manufacturer for Timekeeping applications (eg watches or clocks) or Cardiac pacemakers or hearing aids; | ||
| e amplifier monolithic integrated circuits, the following– | ||
| i audio amplifiers having a maximum rated power output of 25 W or less at a case temperature of 298 K (25°C); | ||
| ii operational amplifiers, having all of the following characteristics– | ||
| a a typical unity-gain open-loop bandwidth of not more than 5 MHz; | ||
| b a typical open-loop voltage gain of not more than 562,000 or 115 dB; | ||
| c a maximum intrinsic rated input offset voltage of not less than 2.5 mV; and | ||
| d a typical slew rate at unity gain not exceeding 2.5 volt/microsecond; | ||
| f voltage monolithic integrated circuits as follows– | ||
| i voltage comparators, having a maximum input offset voltage of no less than 5 mV and a typical switching speed, ie typical response time of no less than 50 nanoseconds; | ||
| ii linear type voltage regulators, having a rated nominal output voltage of 40 V or less and a maximum output current of 1 A or less; | ||
| iii switching type voltage regulators, having a rated nominal output voltage of 40 V or less and a maximum output current of 150 mA or less; | ||
| 6 Encapsulated integrated circuits which are not designed or rated as radiation hardened and which are– | ||
| a not rated for operation at an ambient temperature below 223 K (–40°C) or above 358 K (85°C); | ||
| b packaged in hermetically sealed ceramic packages specified in subhead (b) above; | ||
| c containing unencapsulated integrated circuits specified in subhead 5 above; | ||
| In this entry– “assembly” means a number of components (i.e. circuit elements, discrete components, microcircuits) connected together to perform a specific function or functions, replaceable as an entity (and normally capable of being disassembled); “circuit element” means a single active or passive functional item in an electronic circuit, such as one diode, one transistor, one resistor or one capacitor; “discrete component” means a separately packaged circuit element with its own external connections; “film type microcircuit” means an array of circuit elements and metallic interconnections formed by deposition of a thick or thin film on an insulating substrate; “hybrid microcircuit” means a microcircuit consisting of a combination of film type microcircuits and monolithic integrated circuit elements or combinations of either with discrete components or circuit elements; “microcircuit” means a device in which a number of passive and active circuit elements are considered as indivisibly associated on or within a continuous structure to perform the function of a circuit; “microcomputer microcircuit” means an electronic logic unit capable of executing instructions from internal memory on data contained in the internal memory; “microprocessor microcircuit” means a single package (normally single-chip) electronic logic unit capable of executing from external memory a series of general purpose instructions contained in the external memory; “module” means an assembly, replaceable as an entity, not normally capable of being disassembled; “monolithic integrated circuit” means a microcircuit fabricated as a single component consisting of elements formed in or on a single semi-conducting subtrate by diffusion, implantation or deposition; “multichip integrated circuit” means a microcircuit containing two or more monolithic integrated circuit chips bonded to a common substrate; “optical integrated microcircuit” means a microcircuit containing one or more elements designed to function as a photosensor or photoemitter, or to perform optical or electro-optical functions; “prediffused microcircuit” means an arrangement of elements of monolithic integrated circuits, formed within a single semi-conducting substrate, which can be subsequently interconnected or otherwise modified to perform one of a variety of functions; and “related integrated optical microcircuit” means a microcircuit containing one or more elements designed to function as a photosensor or photoemitter, or to perform optical or electro-optical functions. | ||
| — | Burst transmitters and associated receiving equipment (except simple on-line morse or other data signal convertors or standard items of ADP equipment) and specialised assemblies, sub-assemblies and components therefor | A |
| In this entry a burst transmitter is any electronic equipment or device for use with radio or other communications systems, whether part of a transmitter or modulation device or ancillary to it, which has a capability to accept and store data (telegraphic, speech or other) and to transmit these at transmission speeds/bit rates which are multiples of the input keying speed/bit rates, the purpose or effect of which is to reduce total message duration time and thus to evade detection by other than the intended recipient. | ||
| — | Electrical or electronic equipment, whether or not separately specified in an entry in this Schedule, in respect of which a certificate has been issued to the knowledge of the exporter by or on behalf of the Secretary of State to the effect that the equipment to which the certificate relates meets or has been modified or designed to meet government standards concerned with the limitation of compromising electromagnetic radiation | A |
Reading this document does not replace reading the official text published on legislation.gov.uk. Contains public sector information licensed under the Open Government Licence v3.0. We assume no responsibility for any inaccuracies arising from the conversion of the original CLML XML to this format.
This text is published under legislation.gov.uk's own terms of reuse, not a Legalize or public-domain licence.
legislation.gov.uk
Open Government Licence v3.0 (attribution required)
© Crown and database right. Derived from content available under the Open Government Licence v3.0 from legislation.gov.uk.