Legalize / United Kingdom / Statutory-Instrument

The Export of Goods (Control) Order 1994

Type Statutory-Instrument

Publication 1994-04-24

State In force

Department King's Printer of Acts of Parliament

Source legislation.gov.uk

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(1) Having more than four interpolating axes which can be coordinated simultaneously for contouring control;

(2) Having two, three or four interpolating axes which can be coordinated simultaneously for contouring control and:

(a) Capable of real time processing of data to modify, during the machining operation, tool path, feed rate and spindle data by either:

(1) Automatic calculation and modification of part programme data for machining in two or more axes by means of measuring cycles and access to source data; or

(2) Adaptive control with more than one physical variable measured and processing by means of a computing model (strategy) to change one or more machining instructions to optimize the process;

(b) Capable of receiving directly (on-line) and processing computer aided design (CAD) data for internal preparation of machine instructions; or

(c) Capable, without modification, according to the manufacturer’s technical specifications, of accepting additional boards which would permit an increase above the levels specified in this entry, in the number of interpolating axes which can be coordinated simultaneously for contouring control, even if they do not contain these additional boards;

(b) Motion control boards specially designed for machine tools and having any of the following characteristics:

(1) Interpolation in more than four axes;

(2) Capable of real time processing as described in sub-head a.2.a. of this entry; or

(3) Capable of receiving and processing CAD data as described in sub-head a.2.b. of this entry;

(c) Machine tools, as follows, for removing or cutting metals, ceramics or composites, which, according to the manufacturer’s technical specifications, can be equipped with electronic devices for simultaneous contouring control in two or more axes:

(1) Machine tools for turning, grinding, milling or any combination thereof which:

(a) Have two or more axes which can be coordinated simultaneously for contouring control; and

(b) Have any of the following characteristics:

(1) Two or more contouring rotary axes;

Note: The c axis on jig grinders used to maintain grinding wheels normal to the work surface is not considered a contouring rotary axis.

(2) One or more contouring tilting spindles;

Note: Sub-head c.1.b.2. of this entry applies to machine tools for grinding or milling only.

(3) Camming (axial displacement) in one revolution of the spindle less (better) than 0.0006 mm total indicator reading (TIR);

Note: Sub-head c.1.b.3. of this entry applies to machine tools for turning only.

(4) Run out (out-of-true running) in one revolution of the spindle less (better) than 0.0006 mm TIR;

(5) The positioning accuracies, with all compensations available, are less (better) than:

(a) 0.001° on any rotary axis; or

(1) 0.004 mm along any linear axis (overall positioning) for grinding machines;

(2) 0.006 mm along any linear axis (overall positioning) for turning or milling machines; or

Notes:

(1) Sub-head c.1.b.5. of this entry does not specify milling or turning machine tools with a positioning accuracy along one axis, with all compensations available, equal to or more (worse) than 0.005 mm.

(2) The positioning accuracy of numerically controlled machine tools is to be determined and presented in accordance with ISO 230/2 paragraph 2.13, in conjunction with the requirements below:

(a) Test conditions (paragraph 3):

(1) For 12 hours before and during measurements, the machine tool and accuracy measuring equipment will be kept at the same ambient temperature. During the premeasurement time the slides of the machine will be continuously cycled in the same manner that the accuracy measurements will be taken;

(2) The machine shall be equipped with any mechanical, electronic, or software compensation to be exported with the machine;

(3) Accuracy of measuring equipment for the measurements shall be at least four times more accurate than the expected machine tool accuracy;

(4) Power supply for slide drives shall be as follows:

(a) Line voltage variation shall not exceed ± 10% of nominal rated voltage;

(b) Frequency variation shall not exceed ±2 Hz of normal frequency;

(b) Test programme (paragraph 4):

(1) Feed rate (velocity of slides) during measurement shall be the rapid traverse rate, except in the case of machine tools which generate optical quality surfaces, the feed rate shall be equal to or less than 50 mm per minute;

(2) Measurements shall be made in an incremental manner from one limit of the axis travel to the other without returning to the starting position for each move to the target position;

(3) Axes not being measured shall be retained at mid travel during test of an axis;

(1) Positioning accuracy (A); and

(2) The mean reversal error (B).

End of Notes

(a) A positioning accuracy less (better) than 0.007 mm; and

(b) A slide motion from rest for all slides within 20% of a motion command input for inputs of less than 0.5 micrometre;

Notes:

(1) Minimum increment of motion test (slide motion from rest): The test is conducted only if the machine tool is equipped with a control unit the minimum increment of which is less (better) than 0.5 micrometre. Prepare the machine for testing in accordance with ISO 230/2 paragraphs 3.1, 3.2, 3.3.Conduct the test on each axis (slide) of the machine tool as follows:

(a) Move the axis over at least 50% of the maximum travel in plus and minus directions twice at maximum feed rate, rapid traverse rate or jog control;

(b) Wait at least 10 seconds;

(d) Measure the axis movement;

(e) Clear the control unit with the servo null, reset or whatever clears any signal (voltage) in the servo loop;

(f) Repeat steps b. to e. above five times, twice in the same direction of the axis travel and three times in the opposite direction of travel for a total of six test points;

(g) If the axis movement is between 80% and 120% of the minimum programmable input for four of the six test points, the machine is controlled.

For rotary axes, the measurement is taken 200 mm from the centre of rotation.

(2) Sub-head c.1. of this entry does not specify cylindrical external, internal and external-internal grinding machines having all of the following characteristics:

(a) Not centreless (shoe-type) grinding machines;

(b) Limited to cylindrical grinding;

(d) Only two axes which can be coordinated simultaneously for contouring control; and

(e) No contouring c axis.

(3) Sub-head c.1. of this entry does not specify machines designed specifically as jig grinders having both of the following characteristics:

(a) Axes limited to x, y, c and a, where the c axis is used to maintain the grinding wheel normal to the work surface and the a axis is configured to grind barrel cams; and

(b) A spindle run out not less (not better) than 0.0006 mm.

(4) Sub-head c.1. of this entry does not specify tool or cutter grinding machines having all of the following characteristics:

(a) Shipped as a complete system with software specially designed for the production of tools or cutters;

(b) No more than two rotary axes which can be coordinated simultaneously for contouring control;

(d) The positioning accuracies, with all compensations available, are not less (not better) than:

(1) 0.004 mm along any linear axis for overall positioning; or

(2) 0.001° on any rotary axis.

End of Notes

(2) Electrical discharge machines (EDM) of the wire feed type which have five or more axes which can be coordinated simultaneously for contouring control;

(3) Electrical discharge machines (EDM) of the non-wire type which have two or more rotary axes which can be coordinated simultaneously for contouring control;

(4) Machine tools for removing metals, ceramics or composites:

(a) By means of:

(1) Water or other liquid jets, including those employing abrasive additives;

(2) Electron beam; or

(3) Laser beam; and

(b) Having two or more rotary axes which:

(1) Can be coordinated simultaneously for contouring control; and

(2) Have a positioning accuracy of less (better) than 0.003°.

Note: Machines capable of being simultaneously coordinated for contouring control, in two or more rotary axes or one or more tilting spindles, are specified in this entry regardless of the number of simultaneously coordinated contouring axes that can be controlled by the numerical control unit attached to the machine.

(2B002) Non-numerically controlled machine tools for generating optical quality surfaces, as follows:

(a) Turning machines using a single point cutting tool and having all of the following characteristics:

(1) Slide positioning accuracy less (better) than 0.0005 mm per 300 mm of travel;

(2) Bidirectional slide positioning repeatability less (better) than 0.00025 mm per 300 mm of travel;

(3) Spindle run out and camming less (better) than 0.0004 mm TIR;

(4) Angular deviation of the slide movement (yaw, pitch and roll) less (better) than 2 seconds of arc, TIR, over full travel; and

(5) Slide perpendicularity less (better) than 0.001 mm per 300 mm of travel;

Note: The bidirectional slide positioning repeatability (R) of an axis is the maximum value of the repeatability of positioning at any position along or around the axis determined using the procedure and under the conditions specified in part 2.11 of ISO 230/2: 1988.

(b) Fly cutting machines having both of the following characteristics:

(1) Spindle run out and camming less (better) than 0.0004 mm TIR; and

(2) Angular deviation of slide movement (yaw, pitch and roll) less (better) than 2 seconds of arc, TIR, over full travel.

(2B003) Numerically controlled or manual machine tools specially designed for cutting, finishing, grinding or honing either of the following classes of bevel or parallel axis hardened (Rc = 40 or more) gears, and specially designed components, controls and accessories therefor:

(a) Hardened bevel gears finished to a quality of better than ISO 1328 class 4; or

(b) Hardened spur, helical and double-helical gears with a pitch diameter exceeding 1,250 mm and a face width of 15% of pitch diameter or larger finished to a quality of ISO 1328 class 3 or better.

(2B004) Hot isostatic presses, as follows, and specially designed dies, moulds, components, accessories and controls therefor[^f00034]:

(a) Having a controlled thermal environment within the closed cavity and possessing a chamber cavity with an inside diameter of 406 mm or more; and

(b) Having:

(1) A maximum working pressure exceeding 207 MPa;

(2) A controlled thermal environment exceeding 1,773 K (1,500°C); or

(3) A facility for hydrocarbon impregnation and removal of resultant gaseous degradation products.

Note: The inside chamber dimension is that of the chamber in which both the working temperature and the working pressure are achieved and does not include fixtures. That dimension will be the smaller of either the inside diameter of the pressure chamber or the inside diameter of the insulated furnace chamber, depending on which of the two chambers is located inside the other.

(2B005) Equipment specially designed for the deposition, processing and in-process control of inorganic overlays, coatings and surface modifications, as follows, for non-electronic substrates, by processes shown in the Table and associated Notes following head d. of entry 2E003, and specially designed automated handling, positioning, manipulation and control components therefor:

(a) Stored programme controlled chemical vapour deposition (CVD) production equipment with both of the following:

(1) Process modified for one of the following:

(a) Pulsating CVD;

(b) Controlled nucleation thermal decomposition (CNTD); or

(2) Either of the following:

(a) Incorporating high vacuum (equal to or less than 0.01 Pa) rotating seals; or

(b) Incorporating in situ coating thickness control;

(b) Stored programme controlled ion implantation production equipment having beam currents of 5 mA or more;

(1) Power systems rated for over 80 kW;

(2) A liquid pool level laser control system which regulates precisely the ingots feed rate; and

(3) A computer controlled rate monitor operating on the principle of photoluminescence of the ionised atoms in the evaporant stream to control the deposition rate of a coating containing two or more elements;

(d) Stored programme controlled plasma spraying production equipment having either of the following characteristics:

(1) Operating at reduced pressure controlled atmosphere (equal to or less than 10 kPa measured above and within 300 mm of the gun nozzle exit) in a vacuum chamber capable of evacuation down to 0.01 Pa prior to the spraying process; or

(2) Incorporating in situ coating thickness control;

(e) Stored programme controlled sputter deposition production equipment capable of current densities of 0.1 mA/mm² or higher at a deposition rate of 15 micrometre/hr or more;

(f) Stored programme controlled cathodic arc deposition production equipment incorporating a grid of electromagnets for steering control of the arc spot on the cathode;

(g) Stored programme controlled ion plating production equipment allowing for the in situ measurement of either:

(1) Coating thickness on the substrate and rate control; or

(2) Optical characteristics.

Note: Head g. of this entry does not specify standard ion plating coating equipment for cutting or machining tools.

(2B006) Dimensional inspection or measuring systems or equipment, as follows:

(a) Computer controlled, numerically controlled or stored programme controlled dimensional inspection machines, having both of the following characteristics:

(1) Two or more axes; and

(2) A one dimensional length measurement uncertainty equal to or less (better) than (1.25 + L/1,000) micrometre tested with a probe with an accuracy of less (better) than 0.2 micrometre (L is the measured length in mm);

(b) Linear and angular displacement measuring instruments, as follows:

(1) Linear measuring instruments having any of the following characteristics:

(a) Non-contact type measuring systems with a resolution equal to or less (better) than 0.2 micrometre within a measuring range up to 0.2 mm;

(b) Linear voltage differential transformer systems with both of the following characteristics:

(1) Linearity equal to or less (better) than 0.1% within a measuring range up to 5 mm; and

(2) Drift equal to or less (better) than 0.1% per day at a standard ambient test room temperature ±1 K; or

(1) Containing a laser; and

(2) Maintaining, for at least 12 hours, over a temperature range of ± 1 K around a standard temperature and at a standard pressure:

(a) A resolution over their full scale of 0.1 micrometre or less (better); and

(b) A measurement uncertainty equal to or less (better) than (0.2 +L/2,000) micrometre (L is the measured length in mm);

(2) Angular measuring instruments having an angular position deviation equal to or less (better) than 0.00025°;

Note: Sub-head b.2. of this entry does not specify optical instruments, such as autocollimators, using collimated light to detect angular displacement of a mirror.

(1) Measurement uncertainty along any linear axis equal to or less (better) than 3.5 micrometre per 5 mm; and

(2) Angular position deviation equal to or less (better) than 0.02°;

(d) Equipment for measuring surface irregularities, by measuring optical scatter as a function of angle, with a sensitivity of 0.5 nm or less (better).

Notes:

(1) The probe used in determining the measurement uncertainty of a dimensional inspection system shall be as described in Verein Deutscher Ingenieure (VDI) / Verband Deutscher Elektrotechniker (VDE) 2617 Parts 2, 3 and 4.

(2) All measurement values in this entry represent permissible positive and negative deviations from the target value, i.e., not total band.

(3) Machine tools which can be used as measuring machines are specified if they meet or exceed the criteria specified for the machine tool function or the measuring machine function.

(4) A machine described in this entry is specified if it exceeds the threshold anywhere within its operating range.

(5) In this entry measurement uncertainty means the characteristic parameter which specifies in what range around the output value the correct value of the measurable variable lies with a confidence level of 95%. It includes the uncorrected systematic deviations, the uncorrected backlash and the random deviations (Reference: VDI/VDE 2617).

(2B007) Robots, as follows, and specially designed controllers and end-effectors therefor[^f00035]:

(a) Capable in real time of full three-dimensional image processing or full three-dimensional scene analysis to generate or modify programmes or to generate or modify numerical programme data;

Note: The scene analysis limitation does not include approximation of the third dimension by viewing at a given angle, or limited grey scale interpretation for the perception of depth or texture for the approved tasks (2 1/2 D).

(b) Specially designed to comply with national safety standards applicable to explosive munitions environments; or

(c) Specially designed or rated as radiation-hardened beyond that necessary to withstand normal industrial (i.e., non-nuclear industry) ionizing radiation.

(2B008) Assemblies, units or inserts specially designed for machine tools, or for equipment specified in entries 2B006 or 2B007, as follows:

(a) Spindle assemblies, consisting of spindles and bearings as a minimal assembly, with radial (run out) or axial (camming) axis motion in one revolution of the spindle less (better) than 0.0006 mm TIR;

(b) Linear position feedback units (e.g., inductive type devices, graduated scales, infrared systems or laser systems) having an overall accuracy less (better) than (800 + (600 × L × 10−3)) nm (L equals the effective length in mm);

(c) Rotary position feedback units, e.g., inductive type devices, graduated scales, infrared systems or laser systems, having an accuracy less (better) than 0.00025°;

(d) Slide way assemblies consisting of a minimal assembly of ways, bed and slide having all of the following characteristics:

(1) A yaw, pitch or roll of less (better) than 2 seconds of arc TIR over full travel;

(2) A horizontal straightness of less (better) than 2 micrometre per 300 mm length; and

(3) A vertical straightness of less (better) than 2 micrometre per 300 mm length;

(e) Single point diamond cutting tool inserts, having all of the following characteristics:

(1) Flawless and chip-free cutting edge when magnified 400 times in any direction;

(2) Cutting radius from 0.1 to 5 mm inclusive; and

(3) Cutting radius out-of-roundness less (better) than 0.002 mm TIR.

(2B009) Specially designed printed circuit boards with mounted components and software therefor, or compound rotary tables or tilting spindles, capable of upgrading, according to the manufacturer’s specifications, numerical control units, machine tools or feed-back devices to or above the levels specified in entries 2B001 to 2B008.

(2B104) Equipment and process controls designed or modified for densification and pyrolysis of structural composite rocket nozzles and reentry vehicle nose tips.

Note: The only isostatic presses and furnaces specified in this entry are as follows: Isostatic presses, other than those specified in entry 2B004, having all the following characteristics: Maximum working pressure of 69 MPa or greater; Designed to achieve and maintain a controlled thermal environment of 873 K (600°C) or greater; and Possessing a chamber cavity with an inside diameter of 254 mm or greater; CVD furnaces designed or modified for the densification of carbon-carbon composites.

(2B115) Flow-forming machines, and specially designed components therefor[^f00036], which:

(a) According to the manufacturer’s technical specification, can be equipped with numerical control units or a computer control, even when not equipped with such units; and

(b) With more than two axes which can be coordinated simultaneously for contouring control.

Note: Machines combining the function of spin-forming and flow-forming are for the purpose of this entry regarded as flow-forming machines.

(2B116) Vibration test equipment and components therefor, the following:

(a) Vibration test systems employing feedback or closed loop techniques and incorporating a digital controller, capable of vibrating a system at 10 g rms or more over the entire range 20 Hz to 2000 Hz and imparting forces of 50 kN (11,250 lbs), measured bare table, or greater;

(b) Digital controllers, combined with specially designed vibration test software, with a real-time bandwidth greater than 5 kHz and designed for use with vibration test systems in head a. of this entry;

(c) Vibration thrusters (shaker units), with or without associated amplifiers, capable of imparting a force of 50 kN (11,250 lbs), measured bare table, or greater and usable in vibration test systems in head a. of this entry;

(d) Test piece support structures and electronic units designed to combine multiple shaker units in a system capable of providing an effective combined force of 50 kN, measured bare table, or greater, and usable in vibration systems in head a. of this entry.

In this entry, “bare table” means a flat table, or surface, with no fixtures or fittings.

(2B204) Isostatic presses, other than those specified in entries 2B004 or 2B104, capable of achieving a maximum working pressure of 69 MPa or greater and having a chamber cavity with an inside diameter in excess of 152 mm and specially designed dies, moulds and controls therefor.

(2B207) Robots and end-effectors, other than those specified in entry 2B007, specially designed to comply with national safety standards applicable to handling high explosives (for example, meeting electrical code ratings for high explosives) and specially designed controllers therefor.

(2B215) Spin-forming and flow-forming machines, other than those specified in entry 2B115, and precision rotor-forming mandrels designed to form cylindrical rotors of inside diameter between 75 mm and 400 mm therefor, which:

(a) According to the manufacturer’s technical specification, can be equipped with numerical control units or a computer control; and

(b) With two or more axes that can be coordinated simultaneously for contouring control.

Note: The only spin-forming machines specified in this entry are those combining the function of spin-forming and flow-forming.

(2B225) Remote manipulators that provide mechanical translation of human operator actions by electrical, hydraulic or mechanical means to an operating arm and terminal fixture that can be used to provide remote actions in radiochemical separation operations and hot cells, as follows:

(a) Having a capability of penetrating 0.6 m or more of cell wall; or

(b) Having a capability to bridge over the top of a cell wall with a thickness of 0.6 m or more.

(2B226) Vacuum or controlled environment (inert gas) induction furnaces capable of operating above 1,123 K (850°C) and having induction coils 600 mm or less in diameter and specially designed power supplies therefor with an output rating of 5 kW or more[^f00037].

Note: This entry does not specify furnaces designed for the processing of semiconductor wafers.

(2B227) Vacuum and controlled atmosphere metallurgical melting and casting furnaces as follows; and specially configured computer control and monitoring systems therefor:

(a) Arc remelt and casting furnaces with consumable electrode capacities between 1000 cm³ and 20,000 cm³, capable of operating with melting temperatures above 1973 K (1700°C);

(b) Electron beam melting and plasma atomization and melting furnaces, with a power of 50 kW or greater, capable of operating with melting temperatures above 1473 K (1200°C).

(2B228) Rotor fabrication and assembly equipment and bellows-forming mandrels and dies, as follows:

(a) Rotor assembly equipment for assembly of gas centrifuge rotor tube sections, baffles and end caps, including associated precision mandrels, clamps and shrink fit machines;

(b) Rotor straightening equipment for alignment of gas centrifuge rotor tube sections to a common axis;

Note: Normally such equipment will consist of precision measuring probes linked to a computer that subsequently controls the action of, for example, pneumatic rams used for aligning the rotor tube sections.

(c) Bellows-forming mandrels and dies for producing single-convolution bellows (bellows made of high-strength aluminium alloys, maraging steel or high strength filamentary materials). The bellows have all of the following dimensions:

(1) 75 mm to 400 mm inside diameter;

(2) 12.7 mm or more in length; and

(3) Single convolution depth more than 2 mm.

(2B229) Centrifugal multiplane balancing machines, fixed or portable, horizontal or vertical, as follows:

(a) Centrifugal balancing machines designed for balancing flexible rotors having a length of 600 mm or more and having all of the following characteristics:

(1) A swing or journal diameter of 75 mm or more;

(2) Mass capability of from 0.9 to 23 kg; and

(3) Capable of balancing speed of revolution more than 5000 rpm;

(b) Centrifugal balancing machines designed for balancing hollow cylindrical rotor components and having all of the following characteristics:

(1) A journal diameter of 75 mm or more;

(2) Mass capability of from 0.9 to 23 kg;

(3) Capable of balancing to a residual imbalance of 0.01 kg mm/kg per plane or better; and

(4) Belt drive type.

(2B230) Instruments capable of measuring pressures up to 13 kPa to an accuracy of better than 1% (full-scale), with corrosion-resistant pressure-sensing elements constructed of nickel, nickel alloys, phosphor bronze, stainless steel, aluminium or aluminium alloys.

(2B231) Vacuum pumps with an input throat size of 380 mm or greater with a pumping speed of 15,000 litres/s or greater and capable of producing an ultimate vacuum better than 13 mPa.

Note: The ultimate vacuum is determined at the input of the pump with the input of the pump blocked off.

(2B232) Multistage light gas gun or other high-velocity gun systems (coil, electromagnetic, electrothermal or other advanced systems) capable of accelerating projectiles to 2 km/s or greater.

(2B350) Chemical manufacturing facilities and equipment, as follows:

(a) Reaction vessels or reactors, with or without agitators, with total internal (geometric) volume greater than 0.1 m³ (100 litres) and less than 20 m³ (20,000 litres), where all surfaces that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials:

(1) Alloys with more than 25% nickel and 20% chromium by weight;

(2) Fluoropolymers;

(3) Glass (including vitrified or enamelled coating or glass lining);

(4) Nickel or alloys with more than 40% nickel by weight;

(5) Tantalum or tantalum alloys;

(6) Titanium or titanium alloys; or

(7) Zirconium or zirconium alloys;

(b) Agitators for use in reaction vessels or reactors where all surfaces of the agitator that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials:

(1) Alloys with more than 25% nickel and 20% chromium by weight;

(2) Fluoropolymers;

(3) Glass (including vitrified or enamelled coating or glass lining);

(4) Nickel or alloys with more than 40% nickel by weight;

(5) Tantalum or tantalum alloys;

(6) Titanium or titanium alloys; or

(7) Zirconium or zirconium alloys;

(c) Storage tanks, containers or receivers with a total internal (geometric) volume greater than 0.1 m³ (100 litres) where all surfaces that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials:

(1) Alloys with more than 25% nickel and 20% chromium by weight;

(2) Fluoropolymers;

(3) Glass (including vitrified or enamelled coatings or glass lining);

(4) Nickel or alloys with more than 40% nickel by weight;

(5) Tantalum or tantalum alloys;

(6) Titanium or titanium alloys; or

(7) Zirconium or zirconium alloys;

(d) Heat exchangers or condensers with a heat transfer surface area of less than 20 m², where all surfaces that come in direct contact with the chemical(s) being processed are made from any of the following materials:

(1) Alloys with more than 25% nickel and 20% chromium by weight;

(2) Fluoropolymers;

(3) Glass (including vitrified or enamelled coatings or glass lining);

(4) Graphite;

(5) Nickel or alloys with more than 40% nickel by weight;

(6) Tantalum or tantalum alloys;

(7) Titanium or titanium alloys; or

(8) Zirconium or zirconium alloys;

(e) Distillation or absorption columns of internal diameter greater than 0.1 m, where all surfaces that come in direct contact with the chemical(s) being processed are made from any of the following materials:

(1) Alloys with more than 25% nickel and 20% chromium by weight;

(2) Fluoropolymers;

(3) Glass (including vitrified or enamelled coatings or glass lining);

(4) Graphite;

(5) Nickel or alloys with more than 40% nickel by weight;

(6) Tantalum or tantalum alloys;

(7) Titanium or titanium alloys; or

(8) Zirconium or zirconium alloys;

(f) Remotely operated filling equipment in which all surfaces that come in direct contact with the chemical(s) being processed are made from any of the following materials:

(1) Alloys with more than 25% nickel and 20% chromium by weight; or

(2) Nickel or alloys with more than 40% nickel by weight;

(g) Multiple seal valves incorporating a leak detection port, bellows-seal valves, non-return (check) valves or diaphragm valves, in which all surfaces that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials:

(1) Alloys with more than 25% nickel and 20% chromium by weight;

(2) Fluoropolymers;

(3) Glass (including vitrified or enamelled coatings or glass lining);

(4) Nickel or alloys with more than 40% nickel by weight;

(5) Tantalum or tantalum alloys;

(6) Titanium or titanium alloys; or

(7) Zirconium or zirconium alloys;

(h) Multi-walled piping incorporating a leak detection port, in which all surfaces that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials:

(1) Alloys with more than 25% nickel and 20% chromium by weight;

(2) Fluoropolymers;

(3) Glass (including vitrified or enamelled coatings or glass lining);

(4) Graphite;

(5) Nickel or alloys with more than 40% nickel by weight;

(6) Tantalum or tantalum alloys;

(7) Titanium or titanium alloys; or

(8) Zirconium or zirconium alloys;

(i) Multiple-seal, canned drive, magnetic drive, bellows or diaphragm pumps, with manufacturer’s specified maximum flow-rate greater than 0.6 m³/hour, or vacuum pumps with manufacturer’s specified maximum flow-rate greater than 5 m³/hour (under standard temperature (273 K (0°C)) and pressure (101.3 kPa) conditions), in which all surfaces that come in direct contact with the chemical(s) being processed are made from any of the following materials:

(1) Alloys with more than 25% nickel and 20% chromium by weight;

(2) Ceramics;

(3) Ferrosilicon;

(4) Fluoropolymers;

(5) Glass (including vitrified or enamelled coatings or glass lining);

(6) Graphite;

(7) Nickel or alloys with more than 40% nickel by weight;

(8) Tantalum or tantalum alloys;

(9) Titanium or titanium alloys; or

(10) Zirconium or zirconium alloys;

(j) Incinerators designed to destroy chemicals specified in entry 1C350, having specially designed waste supply systems, special handling facilities and an average combustion chamber temperature greater than 1273 K (1000°C), in which all surfaces in the waste supply system that come into direct contact with the waste products are made from or lined with any of the following materials:

(1) Alloys with more than 25% nickel and 20% chromium by weight;

(2) Ceramics; or

(3) Nickel or alloys with more than 40% nickel by weight.

(2B351) Toxic gas monitoring systems, as follows, and dedicated detectors therefor:

(a) Designed for continuous operation and usable for the detection of chemical warfare agents, chemicals specified in entry 1C350 or organic compounds containing phosphorus, sulphur, fluorine or chlorine, at concentrations of less than 0.3 mg/m³; or

(b) Designed for the detection of cholinesterase-inhibiting activity.

(2B352) Equipment capable of use in biological manufacturing, as follows;

(a) Containment facilities at Containment Level (ACDP) 3 or 4, and related equipment, as follows:

(1) Facilities that meet the criteria for Containment Level 3 or 4 as specified in guidance from the Advisory Committee on Dangerous Pathogens approved by the Health and Safety Commission (published by HMSO, Second Edition 1990);

Note: The criteria for Containment Level 3 or 4 in head a. of this entry are equivalent to the criteria for P3 or P4, BL3 or BL4, L3 or L4 containment as specified in the WHO Laboratory Biosafety manual (Geneva, 1983).

(2) Independently ventilated protective full or half suits;

(3) Biological safety cabinets or isolators, which allow manual operations to be performed within, whilst providing an environment equivalent to Class III biological protection;

Note: In this sub-head, “isolators” include flexible isolators, dry boxes, anaerobic chambers and glove boxes.

(b) Fermenters, bioreactors, chemostats and continuous-flow systems, capable of operation without the propagation of aerosols, having all the following characteristics:

(1) Capacity of 300 litres or more;

(2) Double or multiple sealing joints within the steam containment area; and

(3) Capable of in-situ sterilisation in a closed state;

(c) Centrifugal separators or decanters, capable of continuous separation without the propagation of aerosols, having all the following characteristics:

(1) Flow rate exceeding 100 litres per hour;

(2) Components of polished stainless steel or titanium;

(3) Double or multiple sealing joints within the steam containment area; and

(4) Capable of in-situ sterilisation in a closed state;

(d) Cross-flow filtration equipment, designed for continuous separation without the propagation of aerosols, having both of the following characteristics:

(1) Equal to or greater than 5 square metres; and

(2) Capable of in-situ sterilization;

(e) Steam sterilisable freeze drying equipment with a condenser capacity exceeding 50 kg of ice in 24 hours and less than 1,000 kg of ice in 24 hours;

(f) Chambers designed for aerosol challenge testing with pathogenic microorganisms or toxins and having a capacity of 1 m³ or greater.

2C

Materials

None

2D

Software

(2D001) Software specially designed or modified for the development, production or use of goods specified in entries 2A001 to 2A006 or 2B001 to 2B009.

(2D002) Specific software, as follows:

(a) Software to provide adaptive control and having both of the following characteristics:

(1) For flexible manufacturing units (FMUs) which consist at least of equipment described in sub-heads b.1. and b.2. of the definition of flexible manufacturing unit; and

(2) Capable of generating or modifying, in real time processing, programmes or data by using the signals obtained simultaneously by means of at least two detection techniques, such as:

(a) Machine vision (optical ranging);

(b) Infrared imaging;

(d) Tactile measurement;

(e) Inertial positioning;

(f) Force measurement;

(g) Torque measurement;

Note: Head a. of this entry does not specify software which only provides rescheduling of functionally identical equipment within flexible manufacturing units using pre-stored part programmes and a pre-stored strategy for the distribution of the part programmes.

(b) Software for electronic devices other than those described in heads a. or b. of entry 2B001, which provides the numerical control capability of the goods specified in entry 2B001.

Note: Entry 2B001 and this entry specify any combination of electronic devices or systems that collectively contain software enabling such devices or systems to function as a numerical control unit capable of coordinating simultaneously more than 4 axes for contouring control.

(2D101) Software specially designed for the use of goods specified in entries 2B104, 2B115 or 2B116[^f00038].

(2D201) Software specially designed for the use of goods specified in entries 2B204, 2B207, 2B215, 2B227 or 2B229.

Technology

2E

(2E001) Technology required for the development of goods specified in sub-categories 2A, 2B or 2D.

(2E002) Technology required for the production of goods specified in sub-categories 2A or 2B.

(2E003) Other technology, as follows:

(a) Technology:

(1) For the development of interactive graphics as an integrated part in numerical control units for preparation or modification of part programmes;

(2) For the development of generators of machine tool instructions (e.g., part programmes) from design data residing inside numerical control units;

(3) For the development of integration software for incorporation of expert systems for advanced decision support of shop floor operations into numerical control units;

(b) Technology for metal-working manufacturing processes, as follows:

(1) Technology for the design of tools, dies or fixtures specially designed for the following processes:

(a) Superplastic forming;

(b) Diffusion bonding;

(2) Technical data consisting of process methods or parameters as listed below used to control:

(a) Superplastic forming of aluminium alloys, titanium alloys or superalloys:

(1) Surface preparation;

(2) Strain rate;

(3) Temperature;

(4) Pressure;

(b) Diffusion bonding of superalloys or titanium alloys:

(1) Surface preparation;

(2) Temperature;

(3) Pressure;

(1) Pressure;

(2) Cycle time;

(d) Hot isostatic densification of titanium alloys, aluminium alloys or superalloys:

(1) Temperature;

(2) Pressure;

(3) Cycle time;

(c) Technology for the development or production of hydraulic stretch-forming machines and dies therefor, for the manufacture of airframe structures;

(d) Technology for:

The application of inorganic overlay coatings or inorganic surface modification coatings, specified in column 3 of the following Table;

To non-elecronic substrates, specified in column 2 of the following Table; By processes specified in column 1 of the following Table and defined in the Note. TABLE— DEPOSITION TECHNIQUES 1 Coating Process (1)[^f01000] 2 Substrate 3 Resultant Coating (The numbers in parenthesis refer to the Notes following this Table.) A Chemical Vapour Deposition (CVD) SuperalloysAluminides for internal passagesCeramics and low-expansion glasses(14)SilicidesCarbidesDielectric layers (15)Carbon-carbon, ceramic and metal matrix compositesSilicidesCarbidesRefractory metalsMixtures thereof (4)Dielectric layers (15)AluminidesAlloyed aluminides (2)Cemented tungsten carbide (16), silicon carbideCarbidesTungstenMixtures thereof (4)Dielectric layers (15)Molybdenum and molybdenum alloysDielectric layers (15)Beryllium and beryllium alloysDielectric layers (15)Sensor window materials (9)Dielectric layers (15) B Thermal-Evaporation Physical Vapour Deposition (TE-PVD) 1 Physical Vapour Deposition (PVD): Electron-Beam (EB-PVD) SuperalloysAlloyed silicidesAlloyed aluminides (2)MCrA1X (5)Modified zirconia (12)SilicidesAluminidesMixtures thereof (4)Ceramics and low-expansion glasses (14)Dielectric layers (15)Corrosion resistant steel (7)MCrA1X (5)Modified zirconia (12)Mixtures thereof (4)Carbon-carbon, ceramic and metal matrix compositesSilicidesCarbidesRefractory metalsMixtures thereof (4)Dielectric layers (15)Cemented tungsten carbide (16), silicon carbideCarbidesTungstenMixtures thereof (4)Dielectric layers (15)Molybdenum and molybdenum alloysDielectric layers (15)Beryllium and beryllium alloysDielectric layers (15)BoridesSensor window materials (9)Dielectric layers (15)Titanium alloys (13)BoridesNitrides B.2 Ion assisted resistive heating Physical Vapour Deposition (Ion Plating) Ceramics and low-expansion glasses (14)Dielectric layers (15)Carbon-carbon, ceramic and metal matrix compositesDielectric layers (15)Cemented tungsten carbide (16), silicon carbideDielectric layers (15)Molybdenum and molybdenum alloysDielectric layers (15)Beryllium and beryllium alloysDielectric layers (15)Sensor window materials (9)Dielectric layers (15) B.3 Physical Vapour Deposition: laser evaporation Ceramics and low-expansion glasses (14)SilicidesDielectric layers (15)Carbon-carbon, ceramic and metal matrix compositesDielectric layers (15)Cemented tungsten carbide (16), silicon carbideDielectric layers (15)Molybdenum and molybdenum alloysDielectric layers (15)Beryllium and beryllium alloysDielectric layers (15)Sensor window materials (9)Dielectric layers (15)Diamond-like carbon B.4 Physical Vapour Deposition: cathodic arc discharge SuperalloysAlloyed silicidesAlloyed aluminides (2)MCrA1X (5)Polymers (11) and organic matrix compositesBoridesCarbidesNitrides C Pack cementation (see A above for out-of-pack cementation) (10) Carbon-carbon, ceramic and metal matrix compositesSilicidesCarbidesMixtures thereof (4)Titanium alloys (13)SilicidesAluminidesAlloyed aluminides (2)Refractory metals and alloys (8)SilicidesOxidesD. Plasma sprayingSuperalloysMCrA1X (5)Modified zirconia (12)Mixtures thereof (4)Abradable Nickel-GraphiteAbradable Ni-Cr-Al-BentoniteAbradable Al-Si-PolyesterAlloyed aluminides (2)Aluminium alloys (6)MCrA1X (5)Modified zirconia (12)SilicidesMixtures thereof (4)Refractory metals and alloys (8)AluminidesSilicidesCarbidesCorrosion resistant steel (7)Modified zirconia (12)Mixtures thereof (4)Titanium alloys (13)CarbidesAluminidesSilicidesAlloyed aluminides (2)Abradable Nickel-GraphiteAbradable Ni-Cr-Al-BentoniteAbradable Al-Si-PolyesterE. Slurry DepositionRefractory metals and alloys (8)Fused silicidesFused aluminides except for resistance heating elementsCarbon-carbon, ceramic and metal matrix compositesSilicidesCarbidesMixtures thereof (4)F. Sputter DepositionSuperalloysAlloyed silicidesAlloyed aluminides (2)Noble metal modified aluminides (3)MCrA1X (5)Modified zirconia (12)PlatinumMixtures thereof (4)Ceramics and low-expansion glasses (14)SilicidesPlatinumMixtures thereof (4)Dielectric layers (15)Titanium alloys (13)BoridesNitridesOxidesSilicidesAluminidesAlloyed aluminides (2)CarbidesCarbon-carbon, ceramic and metal matrix compositesSilicidesCarbidesRefractory metalsMixtures thereof (4)Dielectric layers (15)Cemented tungsten carbide (16), silicon carbideCarbidesTungstenMixtures thereof (4)Dielectric layers (15)Molybdenum and molybdenum alloysDielectric layers (15)Beryllium and beryllium alloysBoridesSensor window materials (9)Dielectric layers (15)Dielectric layers (15)Refractory metals and alloys (8)AluminidesSilicidesOxidesCarbidesG. Ion ImplantationHigh temperature bearing steelsAdditions of chromium, tantalum or niobium (columbium)Titanium alloys (13)BoridesNitridesBeryllium and beryllium alloysBoridesCemented tungsten carbide(16)CarbidesNitrides

Table—Deposition Techniques—Notes

1

The term “coating process” includes coating repair and refurbishing as well as original coating.

2

The term “alloyed aluminide coating” includes single or multiple-step coatings in which an element or elements are deposited prior to or during application of the aluminide coating, even if these elements are deposited by another coating process. It does not, however, include the multiple use of single-step pack cementation processes to achieve alloyed aluminides.

3

The term “noble metal modified aluminide” coating includes multiple-step coatings in which the noble metal or noble metals are laid down by some other coating process prior to application of the aluminide coating.

4

Mixtures consist of infiltrated material, graded compositions, co-deposits and multilayer deposits and are obtained by one or more of the coating processes specified in the Table.

5

MCrA1X refers to a coating alloy where M equals cobalt, iron, nickel or combinations thereof and X equals hafnium, yttrium, silicon, tantalum in any amount or other intentional additions over 0.01 weight percent in various proportions and combinations;

except:

(a) CoCrAlY coatings which contain less than 22 weight percent of chromium, less than 7 weight percent of aluminium and less than 2 weight percent of yttrium;

(b) CoCrAlY coatings which contain 22 to 24 weight percent of chromium, 10 to 12 weight percent of aluminium and 0.5 to 0.7 weight percent of yttrium; or

(c) NiCrAlY coatings which contain 21 to 23 weight percent of chromium, 10 to 12 weight percent of aluminium and 0.9 to 1.1 weight percent of yttrium.

6

The term “aluminium alloys” means alloys having an ultimate tensile strength of 190 MPa or more measured at 293 K (20°C).

7

The term “corrosion resistant steel” means AISI (American Iron and Steel Institute) 300 series or equivalent national standard steels.

8

Refractory metals consist of the following metals and their alloys: niobium (columbium), molybdenum, tungsten and tantalum.

9

Sensor window materials, as follows: alumina, silicon, germanium, zinc sulphide, zinc selenide, gallium arsenide and the following metal halides: potassium iodide, potassium fluoride, or sensor window materials of more than 40 mm diameter for thallium bromide and thallium chlorobromide.

10

Technology for single-step pack cementation of solid airfoils is not specified in Category 2.

11

Polymers, as follows: polyimide, polyester, polysulphide, polycarbonates and polyurethanes.

12

Modified zirconia refers to additions of other metal oxides, e.g., calcia, magnesia, yttria, hafnia, rare earth oxides, etc., to zirconia in order to stabilise certain crystallographic phases and phase compositions. Thermal barrier coatings made of zirconia, modified with calcia or magnesia by mixing or fusion, are not controlled.

13

Titanium alloys refers to aerospace alloys having an ultimate tensile strength of 900 MPa or more measured at 293 K (20°C).

14

Low-expansion glasses refers to glasses which have a coefficient of thermal expansion of 1 × 10−7 K−1 or less measured at 293 K (20°C).

15

Dielectric layers are coatings constructed of multi-layers of insulator materials in which the interference properties of a design composed of materials of various refractive indices are used to reflect, transmit or absorb various wavelength bands. Dielectric layers refers to more than four dielectric layers or dielectric/metal composite layers.

16

Cemented tungsten carbide does not include cutting and forming tool materials consisting of tungsten carbide/(cobalt, nickel), titanium carbide/(cobalt, nickel), chromium carbide/nickel-chromium and chromium carbide/nickel.

17

Processes specified in Column 1 of the Table are defined as follows:

(a) Chemical Vapour Deposition (CVD) is an overlay coating or surface modification coating process wherein a metal, alloy, composite, dielectric or ceramic is deposited upon a heated substrate. Gaseous reactants are decomposed or combined in the vicinity of a substrate resulting in the deposition of the desired elemental, alloy or compound material on the substrate. Energy for this decomposition or chemical reaction process may be provided by the heat of the substrate, a glow discharge plasma, or laser irradiation.

Notes:

(1) CVD includes the following processes: directed gas flow out-of-pack deposition, pulsating CVD, controlled nucleation thermal decomposition (CNTD), plasma enhanced or plasma assisted CVD processes.

(2) Pack denotes a substrate immersed in a powder mixture.

(3) The gaseous reactants used in the out-of-pack process are produced using the same basic reactions and parameters as the pack cementation process, except: that the substrate to be coated is not in contact with the powder mixture.

(b) Thermal Evaporation-Physical Vapour Deposition (TE-PVD) is an overlay coating process conducted in a vacuum with a pressure less than 0.1 Pa wherein a source of thermal energy is used to vaporize the coating material. This process results in the condensation, or deposition, of the evaporated species onto appropriately positioned substrates.

The addition of gases to the vacuum chamber during the coating process to synthesize compound coatings is an ordinary modification of the process. The use of ion or electron beams, or plasma, to activate or assist the coating’s deposition is also a common modification in this technique. The use of monitors to provide in-process measurement of optical characteristics and thickness of coatings can be a feature of these processes.

Specific TE-PVD processes are as follows: Electron beam PVD uses an electron beam to heat and evaporate the material which forms the coating; Resistive heating PVD employs electrically resistive heating sources capable of producing a controlled and uniform flux of evaporated coating species; Laser evaporation uses either pulsed or continuous wave laser beams to heat the material which forms the coating; Cathodic arc deposition employs a consumable cathode of the material which forms the coating and has an arc discharge established on the surface by a momentary contact of a ground trigger. Controlled motion of arcing erodes the cathode surface creating a highly ionized plasma. The anode can be either a cone attached to the periphery of the cathode, through an insulator, or the chamber. Substrate biasing is used for non line-of-sight deposition. Note: Cathodic arc deposition does not include random cathodic arcdeposition with non-biased substrates.

(c) Ion plating is a special modification of a general TE-PVD process in which a plasma or an ion source is used to ionize the species to be deposited, and a negative bias is applied to the substrate in order to facilitate the extraction of the species to be deposited from the plasma. The introduction of reactive species, evaporation of solids within the process chamber, and the use of monitors to provide in-process measurement of optical characteristics and thicknesses of coatings are ordinary modifications of the process.

(d) Pack cementation is a surface modification coating or overlay coating process wherein a substrate is immersed in a powder mixture (a pack), that consists of:

(1) The metallic powders that are to be deposited (usually aluminium, chromium, silicon or combinations thereof);

(2) An activator (normally a halide salt); and

(3) An inert powder, most frequently alumina.

The substrate and powder mixture is contained within a retort which is heated to between 1,030 K (757°C) and 1,375 K (1,102°C) for sufficient time to deposit the coating.

(e) Plasma spraying is an overlay coating process wherein a gun (spray torch) which produces and controls a plasma accepts powder or wire coating materials, melts them and propels them towards a substrate, whereon an integrally bonded coating is formed. Plasma spraying constitutes either low pressure plasma spraying or high velocity plasma spraying carried out underwater.

Notes:

(1) Low pressure means less than ambient atmospheric pressure.

(2) High velocity refers to nozzle-exit gas velocity exceeding750 m/s calculated at 293 K (20°C) at 0.1 MPa.

(f) Slurry deposition is a surface modification coating or overlay coating process wherein a metallic or ceramic powder with an organic binder is suspended in a liquid and is applied to a substrate by either spraying, dipping or painting, subsequent air or oven drying, and heat treatment to obtain the desired coating.

(g) Sputter deposition is an overlay coating process based on a momentum transfer phenomenon, wherein positive ions are accelerated by an electric field towards the surface of a target (coating material). The kinetic energy of the impacting ions is sufficient to cause target surface atoms to be released and deposited on an appropriately positioned substrate.

Notes:

(1) The Table refers only to triode, magnetron or reactive sputter deposition which is used to increase adhesion of the coating and rate of deposition and to radio frequency (RF) augmented sputter deposition used to permit vaporization of non-metallic coating materials.

(2) Low-energy ion beams (less than 5 keV) can be used to activatethe deposition.

(h) Ion implantation is a surface modification coating process in which the element to be alloyed is ionized, accelerated through a potential gradient and implanted into the surface region of the substrate. This includes processes in which ion implantation is performed simultaneously with electron beam physical vapour deposition or sputter deposition.

(2E101) Technology required for the use of equipment or software specified in entries 2B004, 2B104, 2B115, 2B116 or 2D101.

(2E201) Technology required for the use of equipment or software specified in entries 2A225, 2A226, 2B001,2B006, head b. of entry 2B007, head c. of entry 2B007, or entries 2B008, 2B009, 2B204, 2B207, 2B215, 2B225 to 2B232 or 2D201.

(2E301) Technology required for the use of goods specified in entries 2B350 to 2B352.

Category 3—Electronics

Equipment, Assemblies and Components

3A

(3A) Notes:

(1) The control on export of equipment, devices and components described in entries 3A001 or 3A002, other than those described in sub-heads a.3. to a.10. or sub-head a.12. of entry 3A001, which are specially designed for, or which have the same functional characteristics as other equipment, is determined by the export control requirements applying to that other equipment.

(2) The control on export of integrated circuits described in sub-heads a.3. to a.9. or sub-head a.12. of entry 3A001, which are unalterably programmed or designed for a specific function in a piece of equipment, is determined by the export control requirements applying to that other equipment.

N.B.:

(1) When the export control requirements applying to the equipment cannot be determined, the integrated circuits are evaluated against the parameters in entry 3A001.

(2) For silicon based microcomputer microcircuits or micro-controller microcircuits, having an operand (data) word length of 8 bits or less, the export control requirements thereof are determined only in sub-head a.3. of entry 3A001.

Electronic devices and components: a General purpose integrated circuits, as follows: Notes: 1 Wafers (finished or unfinished), in which the function has been determined, are evaluated against the parameters of this head. 2 Integrated circuits include the following types: Monolithic integrated circuits; Hybrid integrated circuits; Multichip integrated circuits; Film type integrated circuits, including silicon-on-sapphire integrated circuits; Optical integrated circuits. 1 Integrated circuits, designed or rated as radiation hardened to withstand either of the following: a a total dose of 5 × 10⁵ rads(Si), or higher; or b a dose rate upset of 5 × 10⁸ rads(Si)/s or higher; Note: For integrated circuits designed or rated against neutron or transient ionising radiation, see Group 1 of Part III of this Schedule. 2 Microprocessor microcircuits, microcomputer microcircuits, microcontroller microcircuits, electrical erasable programmable read-only memories (EEPROMs), static random-access memories (SRAMs), storage integrated circuits manufactured from a compound semiconductor, analogue-to-digital converters, digital-to-analogue converters, electro-optical or optical integrated circuits for signal processing, field programmable gate arrays, field programmable logic arrays, neural network integrated circuits, custom integrated circuits for which either the function is unknown or the control status of the equipment in which the integrated circuit will be used is unknown, or Fast Fourier Transform (FFT) processors, as follows: a Rated for operation at an ambient temperature above 398 K (125°C); b Rated for operation at an ambient temperature below 218 K (-55°C); or c Rated for operation over the entire ambient temperature range from 218 K (-55°C) to 398 K (125°C); Note: This sub-head does not apply to integrated circuits for civil automobiles or railway train applications. 3 Microprocessor microcircuits, microcomputer microcircuits and microcontroller microcircuits, having any of the following:Note: Sub-head a.3. of this entry includes digital signal processors, digital array processors and digital coprocessors. a An arithmetic logic unit with an access width of 32 bit or more and a composite theoretical performance (CTP) of 80 million theoretical operations per second (Mtops) or more; b Manufactured from a compound semiconductor and operating at a clock frequency exceeding 40 MHz; or c More than one data or instruction bus or serial communication port for external interconnection in a parallel processor with a transfer rate exceeding 2.5 Mbyte/s;

(4) Electrically erasable programmable read-only memories (EEPROMs) static random-access memories (SRAMs) and storage integrated circuits manufactured from a compound semiconductor, as follows:

(a) EEPROMs with a storage capacity:

(1) Exceeding 16 Mbit per package for flash memory types; or

(2) Exceeding either of the following limits for all other EEPROMtypes:

(a) 4 Mbit per package; or

(b) 1 Mbit per package and having a maximum access time of lessthan 80 ns;

(b) SRAMs with a storage capacity:

(1) Exceeding 4 Mbit per package; or

(2) Exceeding 1 Mbit per package and having a maximum access time of less than 20 ns;

(5) Analogue-to-digital and digital-to-analogue converter integrated circuits, as follows:

(a) Analogue-to-digital converters having any of the following:

(1) A resolution of 8 bit or more, but less than 12 bit, with a total conversion time to maximum resolution of less than 10 ns;

(2) A resolution of 12 bit with a total conversion time to maximumresolution of less than 200 ns; or

(3) A resolution of more than 12 bit with a total conversion time to maximum resolution of less than 2 microseconds;

(b) Digital-to-analogue converters with a resolution of 12 bit or more, and a settling time of less than 10 ns;

(6) Electro-optical or optical integrated circuits for signal processing having all of the following:

(a) One or more internal laser diodes;

(b) One or more internal light detecting elements; and

(7) Field programmable gate arrays having either of the following:

(a) An equivalent usable gate count of more than 30,000 (2 input gates); or

(b) A typical basic gate propagation delay time of less than 0.4 ns;

(8) Field programmable logic arrays having either of the following:

(a) An equivalent usable gate count of more than 30,000 (2 input gates); or

(b) A toggle frequency exceeding 133 MHz;

(9) Neural network integrated circuits;

(10) Custom integrated circuits, for which either the function is unknown, or the control status of the equipment in which the integrated circuit will be used is unknown, having any of the following:

(a) More than 144 terminals;

(b) A typical basic gate propagation delay time of less than 0.4 ns; or

(11) Digital integrated circuits based upon any compound semiconductor and having either of the following:

(a) An equivalent gate count of more than 300 (2 input gates); or

(b) A toggle frequency exceeding 1.2 GHz;

Note: This sub-head does not apply to microprocessor microcircuits, microcomputer microcircuits, microcontroller microcircuits, electrical erasable programmable read-only memories (EEPROMs), static random-access memories (SRAMs), storage integrated circuits manufactured from a compound semiconductor, analogue-to-digital converters, digital-to-analogue converters, electro-optical or optical integrated circuits for signal processing, field programmable gate arrays, field programmable logic arrays, neural network integrated circuits, custom integrated circuits for which either the function is unknown or the control status of the equipment in which the integrated circuit will be used is unknown, or Fast Fourier Transform (FFT) processors.

(12) Fast Fourier Transform (FFT) processors having any of the following:

(a) A rated execution time for a 1,024 point complex FFT of less than 1 ms;

(b) A rated execution time for an N-point complex FFT of other than 1,024 points of less than N log₂ N/10,240 ms, where N is the number of points; or

(b) Microwave or millimetre wave devices:

(1) Electronic vacuum tubes and cathodes, as follows:

Notes: For frequency agile magnetron tubes, see entry ML11 in Group 1 of Part III of this Schedule. Sub-head b.1. of this entry does not specify tubes designed or rated to operate in the Standard Civil Telecommunications Bands at frequencies not exceeding 31 GHz.

Travelling wave tubes, pulsed or continuous wave, as follows: Operating at frequencies higher than 31 GHz; Having a cathode heater element with a turn on time to rated RF power of less than 3 seconds; Coupled cavity tubes, or derivatives thereof with an instantaneous bandwidth of more than 7% or a peak power exceeding 2.5 kW; Helix tubes, or derivatives thereof, with any of the following characteristics: An instantaneous bandwidth of more than one octave, and average power (expressed in kW) times frequency (expressed in GHz) of more than 0.5; An instantaneous bandwidth of one octave or less, and average power (expressed in kW) times frequency (expressed in GHz) of more than 1; or Space qualified;

Crossed-field amplifier tubes with a gain of more than 17 dB;

Impregnated cathodes for electronic tubes, with either of the following: Having a turn on time to rated emission of less than 3 seconds; or Producing a continuous emission current density at rated operating conditions exceeding 5 A/cm²;

(2) Microwave integrated circuits or modules containing monolithic integrated circuits operating at frequencies exceeding 3 GHz;

Note: Sub-head b.2. of this entry does not specify circuits or modules for equipment designed or rated to operate in the Standard Civil Telecommunications Bands at frequencies not exceeding 31 GHz.

(3) Microwave transistors rated for operation at frequencies exceeding 31 GHz;

(4) Microwave solid state amplifiers, as follows:

(a) Operating at frequencies exceeding 10.5 GHz and having an instantaneous bandwidth of more than half an octave;

(b) Operating at frequencies exceeding 31 GHz;

(5) Electronically or magnetically tunable band-pass or band-stop filters having more than 5 tunable resonators capable of tuning across a 1.5:1 frequency band (fmax/fmin) in less than 10 microseconds with either:

(a) A band-pass bandwidth of more than 0.5% of centre frequency; or

(b) A band-stop bandwidth of less than 0.5% of centre frequency;

(6) Microwave assemblies capable of operating at frequencies exceeding 31 GHz;

(7) Mixers and converters designed to extend the frequency range of equipment described in heads c., e. or f. of entry 3A002 beyond the limits stated therein;

(1) Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices (i.e., signal processing devices employing elastic waves in materials), having any of the following:

(a) A carrier frequency exceeding 2.5 GHz;

(b) A carrier frequency of 2.5 GHz or less, and:

(1) A frequency side-lobe rejection exceeding 55 dB;

(2) A product of the maximum delay time and the bandwidth (time in microseconds and bandwidth in MHz) of more than 100; or

(3) A dispersive delay of more than 10 microseconds; or

(2) Bulk (volume) acoustic wave devices (i.e., signal processing devices employing elastic waves) which permit direct processing of signals at frequencies exceeding 1 GHz;

(3) Acoustic-optic signal processing devices employing interaction between acoustic waves (bulk wave or surface wave) and light waves which permit the direct processing of signals or images, including spectral analysis, correlation or convolution;

(d) Electronic devices or circuits containing components, manufactured from superconductive materials specially designed for operation at temperatures below the critical temperature of at least one of the superconductive constituents, with any of the following:

(1) Electromagnetic amplification:

(a) At frequencies equal to or less than 31 GHz with a noise figure of less than 0.5 dB; or

(b) At frequencies exceeding 31 GHz;

(2) Current switching for digital circuits using superconductive gates with a product of delay time per gate (in seconds) and power dissipation per gate (in watts) of less than 10−14 J; or

(3) Frequency selection at all frequencies using resonant circuits with Q-values exceeding 10,000;

(e) High energy devices, as follows:

(1) Batteries, as follows:

Note: Sub-head e.1. of this entry does not specify batteries with volumes equal to or less than 27 cm³ (e.g., standard C-cells or R14 batteries).

(a) Primary cells and batteries having an energy density exceeding 480 Wh/kg and rated for operation in the temperature range from below 243 K (-30°C) to above 343 K (70°C);

(b) Rechargeable cells and batteries having an energy density exceeding 150 Wh/kg after 75 charge/discharge cycles at a discharge current equal to C/5 hours (C being the nominal capacity in ampere hours) when operating in the temperature range from below 253 K (-20°C) to above 333 K (60°C);

Note: Energy density is obtained by multiplying the average power in watts (average voltage in volts times average current in amperes) by the duration of the discharge in hours to 75% of the open circuit voltage divided by the total mass of the cell (or battery) in kg.

(c) Space qualified and radiation hardened photovoltaic arrays with a specific power exceeding 160 W/m² at an operating temperature of 301 K (28°C) under a tungsten illumination of 1 kW/m² at 2,800 K (2,527°C);

(2) High energy storage capacitors, as follows[^f00039]:

(a) Capacitors with a repetition rate of less than 10 Hz (single shot capacitors) having all of the following:

(1) A voltage rating equal to or more than 5 kV;

(2) An energy density equal to or more than 250 J/kg; and

(3) A total energy equal to or more than 25 kJ;

(b) Capacitors with a repetition rate of 10 Hz or more (repetition rated capacitors) having all of the following:

(1) A voltage rating equal to or more than 5 kV;

(2) An energy density equal to or more than 50 J/kg;

(3) A total energy equal to or more than 100 J; and

(4) A charge/discharge cycle life equal to or more than 10,000;

(3) Superconductive electromagnets or solenoids specially designed to be fully charged or discharged in less than one second, having all of the following[^f00040]:

(a) Energy delivered during the discharge exceeding 10 kJ in the first second;

(b) Inner diameter of the current carrying windings of more than 250 mm; and

(c) Rated for a magnetic induction of more than 8 T or overall current density in the winding of more than 300 A/mm²;

Note: Sub-head e.3. of this entry does not specify superconductive electromagnets or solenoids specially designed for Magnetic Resonance Imaging (MRI) medical equipment.

(4) Circuits or systems for electromagnetic energy storage, containing components manufactured from superconductive materials specially designed for operation at temperatures below the critical temperature of at least one of their superconductive constituents, having all of the following:

(a) Resonant operating frequencies exceeding 1 MHz;

(b) A stored energy density of 1 MJ/m³ or more; and

(5) Flash discharge type X-ray systems, and tubes therefor, having all of the following[^f00041]:

(a) A peak power exceeding 500 MW;

(b) An output voltage exceeding 500 kV; and

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