LegalizeThe Russia (Sanctions) (EU Exit) Regulations 2019
| 3A991 Electronic devices and components | 3A991 Electronic devices and components | 3A991 Electronic devices and components | 3A991 Electronic devices and components | 3A991 Electronic devices and components | 3A991 Electronic devices and components | 3A991 Electronic devices and components |
|---|---|---|---|---|---|---|
| a. “Microprocessor microcircuits”, “microcomputer microcircuits”, and microcontroller microcircuits having any of the following: | a. “Microprocessor microcircuits”, “microcomputer microcircuits”, and microcontroller microcircuits having any of the following: | a. “Microprocessor microcircuits”, “microcomputer microcircuits”, and microcontroller microcircuits having any of the following: | a. “Microprocessor microcircuits”, “microcomputer microcircuits”, and microcontroller microcircuits having any of the following: | a. “Microprocessor microcircuits”, “microcomputer microcircuits”, and microcontroller microcircuits having any of the following: | a. “Microprocessor microcircuits”, “microcomputer microcircuits”, and microcontroller microcircuits having any of the following: | |
| a.1. A performance speed of 5 GFLOPS or more and an arithmetic logic unit with an access width of 32 bit or more; | a.1. A performance speed of 5 GFLOPS or more and an arithmetic logic unit with an access width of 32 bit or more; | a.1. A performance speed of 5 GFLOPS or more and an arithmetic logic unit with an access width of 32 bit or more; | a.1. A performance speed of 5 GFLOPS or more and an arithmetic logic unit with an access width of 32 bit or more; | a.1. A performance speed of 5 GFLOPS or more and an arithmetic logic unit with an access width of 32 bit or more; | ||
| a.2. A clock frequency rate exceeding 25 MHz; or | a.2. A clock frequency rate exceeding 25 MHz; or | a.2. A clock frequency rate exceeding 25 MHz; or | a.2. A clock frequency rate exceeding 25 MHz; or | a.2. A clock frequency rate exceeding 25 MHz; or | ||
| a.3. More than one data or instruction bus or serial communication port that provides a direct external interconnection between parallel “microprocessor microcircuits” with a transfer rate of 2.5 Mbyte/s; | a.3. More than one data or instruction bus or serial communication port that provides a direct external interconnection between parallel “microprocessor microcircuits” with a transfer rate of 2.5 Mbyte/s; | a.3. More than one data or instruction bus or serial communication port that provides a direct external interconnection between parallel “microprocessor microcircuits” with a transfer rate of 2.5 Mbyte/s; | a.3. More than one data or instruction bus or serial communication port that provides a direct external interconnection between parallel “microprocessor microcircuits” with a transfer rate of 2.5 Mbyte/s; | a.3. More than one data or instruction bus or serial communication port that provides a direct external interconnection between parallel “microprocessor microcircuits” with a transfer rate of 2.5 Mbyte/s; | ||
| b. Storage integrated circuits, as follows: | b. Storage integrated circuits, as follows: | b. Storage integrated circuits, as follows: | b. Storage integrated circuits, as follows: | b. Storage integrated circuits, as follows: | b. Storage integrated circuits, as follows: | |
| b.1. Electrical erasable programmable read-only memories (EEPROMs) with a storage capacity: | b.1. Electrical erasable programmable read-only memories (EEPROMs) with a storage capacity: | b.1. Electrical erasable programmable read-only memories (EEPROMs) with a storage capacity: | b.1. Electrical erasable programmable read-only memories (EEPROMs) with a storage capacity: | b.1. Electrical erasable programmable read-only memories (EEPROMs) with a storage capacity: | ||
| b.1.a. Exceeding 16 Mbits per package for flash memory types; or | b.1.a. Exceeding 16 Mbits per package for flash memory types; or | b.1.a. Exceeding 16 Mbits per package for flash memory types; or | b.1.a. Exceeding 16 Mbits per package for flash memory types; or | |||
| b.1.b. Exceeding either of the following limits for all other EEPROM types: | b.1.b. Exceeding either of the following limits for all other EEPROM types: | b.1.b. Exceeding either of the following limits for all other EEPROM types: | b.1.b. Exceeding either of the following limits for all other EEPROM types: | |||
| b.1.b.1. Exceeding 1 Mbit per package; or | b.1.b.1. Exceeding 1 Mbit per package; or | b.1.b.1. Exceeding 1 Mbit per package; or | ||||
| b.1.b.2. Exceeding 256 kbit per package and a maximum access time of less than 80 ns; | b.1.b.2. Exceeding 256 kbit per package and a maximum access time of less than 80 ns; | b.1.b.2. Exceeding 256 kbit per package and a maximum access time of less than 80 ns; | ||||
| b.2 Static random access memories (SRAMs) with a storage capacity: | b.2 Static random access memories (SRAMs) with a storage capacity: | b.2 Static random access memories (SRAMs) with a storage capacity: | b.2 Static random access memories (SRAMs) with a storage capacity: | b.2 Static random access memories (SRAMs) with a storage capacity: | ||
| b.2.a. Exceeding 1 Mbit per package; or | ||||||
| b.2.b. Exceeding 256 kbit per package and a maximum access time of less than 25 ns; | ||||||
| c. Analog-to-digital converters having any of the following: | c. Analog-to-digital converters having any of the following: | c. Analog-to-digital converters having any of the following: | c. Analog-to-digital converters having any of the following: | c. Analog-to-digital converters having any of the following: | c. Analog-to-digital converters having any of the following: | |
| c.1. A resolution of 8 bit or more, but less than 12 bit, with an output rate greater than 200 mega samples per second; | c.1. A resolution of 8 bit or more, but less than 12 bit, with an output rate greater than 200 mega samples per second; | c.1. A resolution of 8 bit or more, but less than 12 bit, with an output rate greater than 200 mega samples per second; | c.1. A resolution of 8 bit or more, but less than 12 bit, with an output rate greater than 200 mega samples per second; | c.1. A resolution of 8 bit or more, but less than 12 bit, with an output rate greater than 200 mega samples per second; | ||
| c.2. A resolution of 12 bit with an output rate greater than 105 mega samples per second; | c.2. A resolution of 12 bit with an output rate greater than 105 mega samples per second; | c.2. A resolution of 12 bit with an output rate greater than 105 mega samples per second; | c.2. A resolution of 12 bit with an output rate greater than 105 mega samples per second; | c.2. A resolution of 12 bit with an output rate greater than 105 mega samples per second; | ||
| c.3. A resolution of more than 12 bit but equal to or less than 14 bit with an output rate greater than 10 mega samples per second; or | c.3. A resolution of more than 12 bit but equal to or less than 14 bit with an output rate greater than 10 mega samples per second; or | c.3. A resolution of more than 12 bit but equal to or less than 14 bit with an output rate greater than 10 mega samples per second; or | c.3. A resolution of more than 12 bit but equal to or less than 14 bit with an output rate greater than 10 mega samples per second; or | c.3. A resolution of more than 12 bit but equal to or less than 14 bit with an output rate greater than 10 mega samples per second; or | ||
| c.4. A resolution of more than 14 bit with an output rate greater than 2.5 mega samples per second; | c.4. A resolution of more than 14 bit with an output rate greater than 2.5 mega samples per second; | c.4. A resolution of more than 14 bit with an output rate greater than 2.5 mega samples per second; | c.4. A resolution of more than 14 bit with an output rate greater than 2.5 mega samples per second; | c.4. A resolution of more than 14 bit with an output rate greater than 2.5 mega samples per second; | ||
| d. Field programmable logic devices having a maximum number of single-ended digital input/outputs between 200 and 700; | d. Field programmable logic devices having a maximum number of single-ended digital input/outputs between 200 and 700; | d. Field programmable logic devices having a maximum number of single-ended digital input/outputs between 200 and 700; | d. Field programmable logic devices having a maximum number of single-ended digital input/outputs between 200 and 700; | d. Field programmable logic devices having a maximum number of single-ended digital input/outputs between 200 and 700; | d. Field programmable logic devices having a maximum number of single-ended digital input/outputs between 200 and 700; | |
| e. Fast Fourier Transform (FFT) processors having a rated execution time for a 1,024 point complex FFT of less than 1 ms; | e. Fast Fourier Transform (FFT) processors having a rated execution time for a 1,024 point complex FFT of less than 1 ms; | e. Fast Fourier Transform (FFT) processors having a rated execution time for a 1,024 point complex FFT of less than 1 ms; | e. Fast Fourier Transform (FFT) processors having a rated execution time for a 1,024 point complex FFT of less than 1 ms; | e. Fast Fourier Transform (FFT) processors having a rated execution time for a 1,024 point complex FFT of less than 1 ms; | e. Fast Fourier Transform (FFT) processors having a rated execution time for a 1,024 point complex FFT of less than 1 ms; | |
| f. Custom integrated circuits for which either the function is unknown, or the control status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following: | f. Custom integrated circuits for which either the function is unknown, or the control status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following: | f. Custom integrated circuits for which either the function is unknown, or the control status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following: | f. Custom integrated circuits for which either the function is unknown, or the control status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following: | f. Custom integrated circuits for which either the function is unknown, or the control status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following: | f. Custom integrated circuits for which either the function is unknown, or the control status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following: | |
| f.1. More than 144 terminals; or | f.1. More than 144 terminals; or | f.1. More than 144 terminals; or | f.1. More than 144 terminals; or | f.1. More than 144 terminals; or | ||
| f.2. A typical “basic gate propagation delay time” of less than 0.4 ns; | f.2. A typical “basic gate propagation delay time” of less than 0.4 ns; | f.2. A typical “basic gate propagation delay time” of less than 0.4 ns; | f.2. A typical “basic gate propagation delay time” of less than 0.4 ns; | f.2. A typical “basic gate propagation delay time” of less than 0.4 ns; | ||
| g. Traveling-wave “vacuum electronic devices,” pulsed or continuous wave, as follows: | g. Traveling-wave “vacuum electronic devices,” pulsed or continuous wave, as follows: | g. Traveling-wave “vacuum electronic devices,” pulsed or continuous wave, as follows: | g. Traveling-wave “vacuum electronic devices,” pulsed or continuous wave, as follows: | g. Traveling-wave “vacuum electronic devices,” pulsed or continuous wave, as follows: | g. Traveling-wave “vacuum electronic devices,” pulsed or continuous wave, as follows: | |
| g.1. Coupled cavity devices, or derivatives thereof; | g.1. Coupled cavity devices, or derivatives thereof; | g.1. Coupled cavity devices, or derivatives thereof; | g.1. Coupled cavity devices, or derivatives thereof; | g.1. Coupled cavity devices, or derivatives thereof; | ||
| g.2. Devices based on helix, folded waveguide, or serpentine waveguide circuits, or derivatives thereof, having either of the following: | g.2. Devices based on helix, folded waveguide, or serpentine waveguide circuits, or derivatives thereof, having either of the following: | g.2. Devices based on helix, folded waveguide, or serpentine waveguide circuits, or derivatives thereof, having either of the following: | g.2. Devices based on helix, folded waveguide, or serpentine waveguide circuits, or derivatives thereof, having either of the following: | g.2. Devices based on helix, folded waveguide, or serpentine waveguide circuits, or derivatives thereof, having either of the following: | ||
| g.2.a. An “instantaneous bandwidth” of half an octave or more; and | g.2.a. An “instantaneous bandwidth” of half an octave or more; and | g.2.a. An “instantaneous bandwidth” of half an octave or more; and | g.2.a. An “instantaneous bandwidth” of half an octave or more; and | |||
| g.2.b. The product of the rated average output power (expressed in kW) and the maximum operating frequency (expressed in GHz) of more than 0.2; or | g.2.b. The product of the rated average output power (expressed in kW) and the maximum operating frequency (expressed in GHz) of more than 0.2; or | g.2.b. The product of the rated average output power (expressed in kW) and the maximum operating frequency (expressed in GHz) of more than 0.2; or | g.2.b. The product of the rated average output power (expressed in kW) and the maximum operating frequency (expressed in GHz) of more than 0.2; or | |||
| g.2.c. An “instantaneous bandwidth” of less than half an octave; and | g.2.c. An “instantaneous bandwidth” of less than half an octave; and | g.2.c. An “instantaneous bandwidth” of less than half an octave; and | g.2.c. An “instantaneous bandwidth” of less than half an octave; and | |||
| g.2.d. The product of the rated average output power (expressed in kW) and the maximum operating frequency (expressed in GHz) of more than 0.4; | g.2.d. The product of the rated average output power (expressed in kW) and the maximum operating frequency (expressed in GHz) of more than 0.4; | g.2.d. The product of the rated average output power (expressed in kW) and the maximum operating frequency (expressed in GHz) of more than 0.4; | g.2.d. The product of the rated average output power (expressed in kW) and the maximum operating frequency (expressed in GHz) of more than 0.4; | |||
| h. Flexible waveguides designed for use at frequencies exceeding 40 GHz; | h. Flexible waveguides designed for use at frequencies exceeding 40 GHz; | h. Flexible waveguides designed for use at frequencies exceeding 40 GHz; | h. Flexible waveguides designed for use at frequencies exceeding 40 GHz; | h. Flexible waveguides designed for use at frequencies exceeding 40 GHz; | h. Flexible waveguides designed for use at frequencies exceeding 40 GHz; | |
| i. Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices (i.e., “signal processing” devices employing elastic waves in materials), having either of the following: | i. Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices (i.e., “signal processing” devices employing elastic waves in materials), having either of the following: | i. Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices (i.e., “signal processing” devices employing elastic waves in materials), having either of the following: | i. Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices (i.e., “signal processing” devices employing elastic waves in materials), having either of the following: | i. Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices (i.e., “signal processing” devices employing elastic waves in materials), having either of the following: | i. Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices (i.e., “signal processing” devices employing elastic waves in materials), having either of the following: | |
| i.1. A carrier frequency exceeding 1 GHz; or | i.1. A carrier frequency exceeding 1 GHz; or | i.1. A carrier frequency exceeding 1 GHz; or | i.1. A carrier frequency exceeding 1 GHz; or | i.1. A carrier frequency exceeding 1 GHz; or | ||
| i.2. A carrier frequency of 1 GHz or less; and | i.2. A carrier frequency of 1 GHz or less; and | i.2. A carrier frequency of 1 GHz or less; and | i.2. A carrier frequency of 1 GHz or less; and | i.2. A carrier frequency of 1 GHz or less; and | ||
| i.2.a. A frequency side-lobe rejection exceeding 55 dB; | i.2.a. A frequency side-lobe rejection exceeding 55 dB; | i.2.a. A frequency side-lobe rejection exceeding 55 dB; | i.2.a. A frequency side-lobe rejection exceeding 55 dB; | |||
| i.2.b. A product of the maximum delay time and bandwidth (time in µs and bandwidth in MHz) of more than 100; or | i.2.b. A product of the maximum delay time and bandwidth (time in µs and bandwidth in MHz) of more than 100; or | i.2.b. A product of the maximum delay time and bandwidth (time in µs and bandwidth in MHz) of more than 100; or | i.2.b. A product of the maximum delay time and bandwidth (time in µs and bandwidth in MHz) of more than 100; or | |||
| i.2.c. A dispersive delay of more than 10 µs; | i.2.c. A dispersive delay of more than 10 µs; | i.2.c. A dispersive delay of more than 10 µs; | i.2.c. A dispersive delay of more than 10 µs; | |||
| j. Cells as follows: | j. Cells as follows: | j. Cells as follows: | j. Cells as follows: | j. Cells as follows: | j. Cells as follows: | |
| j.1. Primary cells having an energy density of 550 Wh/kg or less at 293 K (20ºC); | j.1. Primary cells having an energy density of 550 Wh/kg or less at 293 K (20ºC); | j.1. Primary cells having an energy density of 550 Wh/kg or less at 293 K (20ºC); | j.1. Primary cells having an energy density of 550 Wh/kg or less at 293 K (20ºC); | j.1. Primary cells having an energy density of 550 Wh/kg or less at 293 K (20ºC); | ||
| j.2. Secondary cells having an energy density of 350 Wh/kg or less at 293 K (20ºC); | j.2. Secondary cells having an energy density of 350 Wh/kg or less at 293 K (20ºC); | j.2. Secondary cells having an energy density of 350 Wh/kg or less at 293 K (20ºC); | j.2. Secondary cells having an energy density of 350 Wh/kg or less at 293 K (20ºC); | j.2. Secondary cells having an energy density of 350 Wh/kg or less at 293 K (20ºC); | ||
| Note:3A991.j does not control batteries, including single cell batteries.Technical Notes:1. For the purposes of 3A991.j energy density (Wh/kg) is calculated from the nominal voltage multiplied by the nominal capacity in ampere-hours divided by the mass in kilograms. If the nominal capacity is not stated, energy density is calculated from the nominal voltage squared then multiplied by the discharge duration in hours divided by the discharge load in Ohms and the mass in kilograms.2. For the purposes of 3A991.j, a ‘cell’ is defined as an electrochemical device, which has positive and negative electrodes, and electrolyte, and is a source of electrical energy. It is the basic building block of a battery.3. For the purposes of 3A991.j.1, a ‘primary cell’ is a ‘cell’ that is not designed to be charged by any other source.4. For the purposes of 3A991.j.2, a ‘secondary cell’ is a ‘cell’ that is designed to be charged by an external electrical source. | Note:3A991.j does not control batteries, including single cell batteries.Technical Notes:1. For the purposes of 3A991.j energy density (Wh/kg) is calculated from the nominal voltage multiplied by the nominal capacity in ampere-hours divided by the mass in kilograms. If the nominal capacity is not stated, energy density is calculated from the nominal voltage squared then multiplied by the discharge duration in hours divided by the discharge load in Ohms and the mass in kilograms.2. For the purposes of 3A991.j, a ‘cell’ is defined as an electrochemical device, which has positive and negative electrodes, and electrolyte, and is a source of electrical energy. It is the basic building block of a battery.3. For the purposes of 3A991.j.1, a ‘primary cell’ is a ‘cell’ that is not designed to be charged by any other source.4. For the purposes of 3A991.j.2, a ‘secondary cell’ is a ‘cell’ that is designed to be charged by an external electrical source. | Note:3A991.j does not control batteries, including single cell batteries.Technical Notes:1. For the purposes of 3A991.j energy density (Wh/kg) is calculated from the nominal voltage multiplied by the nominal capacity in ampere-hours divided by the mass in kilograms. If the nominal capacity is not stated, energy density is calculated from the nominal voltage squared then multiplied by the discharge duration in hours divided by the discharge load in Ohms and the mass in kilograms.2. For the purposes of 3A991.j, a ‘cell’ is defined as an electrochemical device, which has positive and negative electrodes, and electrolyte, and is a source of electrical energy. It is the basic building block of a battery.3. For the purposes of 3A991.j.1, a ‘primary cell’ is a ‘cell’ that is not designed to be charged by any other source.4. For the purposes of 3A991.j.2, a ‘secondary cell’ is a ‘cell’ that is designed to be charged by an external electrical source. | Note:3A991.j does not control batteries, including single cell batteries.Technical Notes:1. For the purposes of 3A991.j energy density (Wh/kg) is calculated from the nominal voltage multiplied by the nominal capacity in ampere-hours divided by the mass in kilograms. If the nominal capacity is not stated, energy density is calculated from the nominal voltage squared then multiplied by the discharge duration in hours divided by the discharge load in Ohms and the mass in kilograms.2. For the purposes of 3A991.j, a ‘cell’ is defined as an electrochemical device, which has positive and negative electrodes, and electrolyte, and is a source of electrical energy. It is the basic building block of a battery.3. For the purposes of 3A991.j.1, a ‘primary cell’ is a ‘cell’ that is not designed to be charged by any other source.4. For the purposes of 3A991.j.2, a ‘secondary cell’ is a ‘cell’ that is designed to be charged by an external electrical source. | Note:3A991.j does not control batteries, including single cell batteries.Technical Notes:1. For the purposes of 3A991.j energy density (Wh/kg) is calculated from the nominal voltage multiplied by the nominal capacity in ampere-hours divided by the mass in kilograms. If the nominal capacity is not stated, energy density is calculated from the nominal voltage squared then multiplied by the discharge duration in hours divided by the discharge load in Ohms and the mass in kilograms.2. For the purposes of 3A991.j, a ‘cell’ is defined as an electrochemical device, which has positive and negative electrodes, and electrolyte, and is a source of electrical energy. It is the basic building block of a battery.3. For the purposes of 3A991.j.1, a ‘primary cell’ is a ‘cell’ that is not designed to be charged by any other source.4. For the purposes of 3A991.j.2, a ‘secondary cell’ is a ‘cell’ that is designed to be charged by an external electrical source. | Note:3A991.j does not control batteries, including single cell batteries.Technical Notes:1. For the purposes of 3A991.j energy density (Wh/kg) is calculated from the nominal voltage multiplied by the nominal capacity in ampere-hours divided by the mass in kilograms. If the nominal capacity is not stated, energy density is calculated from the nominal voltage squared then multiplied by the discharge duration in hours divided by the discharge load in Ohms and the mass in kilograms.2. For the purposes of 3A991.j, a ‘cell’ is defined as an electrochemical device, which has positive and negative electrodes, and electrolyte, and is a source of electrical energy. It is the basic building block of a battery.3. For the purposes of 3A991.j.1, a ‘primary cell’ is a ‘cell’ that is not designed to be charged by any other source.4. For the purposes of 3A991.j.2, a ‘secondary cell’ is a ‘cell’ that is designed to be charged by an external electrical source. | Note:3A991.j does not control batteries, including single cell batteries.Technical Notes:1. For the purposes of 3A991.j energy density (Wh/kg) is calculated from the nominal voltage multiplied by the nominal capacity in ampere-hours divided by the mass in kilograms. If the nominal capacity is not stated, energy density is calculated from the nominal voltage squared then multiplied by the discharge duration in hours divided by the discharge load in Ohms and the mass in kilograms.2. For the purposes of 3A991.j, a ‘cell’ is defined as an electrochemical device, which has positive and negative electrodes, and electrolyte, and is a source of electrical energy. It is the basic building block of a battery.3. For the purposes of 3A991.j.1, a ‘primary cell’ is a ‘cell’ that is not designed to be charged by any other source.4. For the purposes of 3A991.j.2, a ‘secondary cell’ is a ‘cell’ that is designed to be charged by an external electrical source. |
| k. “Superconductive” electromagnets or solenoids, specially designed to be fully charged or discharged in less than one minute, having all of the following:Note: 3A991.k does not control “superconductive” electromagnets or solenoids specially designed for Magnetic Resonance Imaging (MRI) medical equipment. | k. “Superconductive” electromagnets or solenoids, specially designed to be fully charged or discharged in less than one minute, having all of the following:Note: 3A991.k does not control “superconductive” electromagnets or solenoids specially designed for Magnetic Resonance Imaging (MRI) medical equipment. | k. “Superconductive” electromagnets or solenoids, specially designed to be fully charged or discharged in less than one minute, having all of the following:Note: 3A991.k does not control “superconductive” electromagnets or solenoids specially designed for Magnetic Resonance Imaging (MRI) medical equipment. | k. “Superconductive” electromagnets or solenoids, specially designed to be fully charged or discharged in less than one minute, having all of the following:Note: 3A991.k does not control “superconductive” electromagnets or solenoids specially designed for Magnetic Resonance Imaging (MRI) medical equipment. | k. “Superconductive” electromagnets or solenoids, specially designed to be fully charged or discharged in less than one minute, having all of the following:Note: 3A991.k does not control “superconductive” electromagnets or solenoids specially designed for Magnetic Resonance Imaging (MRI) medical equipment. | k. “Superconductive” electromagnets or solenoids, specially designed to be fully charged or discharged in less than one minute, having all of the following:Note: 3A991.k does not control “superconductive” electromagnets or solenoids specially designed for Magnetic Resonance Imaging (MRI) medical equipment. | |
| k.1. Maximum energy delivered during the discharge divided by the duration of the discharge of more than 500 kJ per minute; | k.1. Maximum energy delivered during the discharge divided by the duration of the discharge of more than 500 kJ per minute; | k.1. Maximum energy delivered during the discharge divided by the duration of the discharge of more than 500 kJ per minute; | k.1. Maximum energy delivered during the discharge divided by the duration of the discharge of more than 500 kJ per minute; | k.1. Maximum energy delivered during the discharge divided by the duration of the discharge of more than 500 kJ per minute; | ||
| k.2. Inner diameter of the current carrying windings of more than 250 mm; and | k.2. Inner diameter of the current carrying windings of more than 250 mm; and | k.2. Inner diameter of the current carrying windings of more than 250 mm; and | k.2. Inner diameter of the current carrying windings of more than 250 mm; and | k.2. Inner diameter of the current carrying windings of more than 250 mm; and | ||
| k.3. Rated for a magnetic induction of more than 8T or “overall current density” in the winding of more than 300 A/mm²; | k.3. Rated for a magnetic induction of more than 8T or “overall current density” in the winding of more than 300 A/mm²; | k.3. Rated for a magnetic induction of more than 8T or “overall current density” in the winding of more than 300 A/mm²; | k.3. Rated for a magnetic induction of more than 8T or “overall current density” in the winding of more than 300 A/mm²; | k.3. Rated for a magnetic induction of more than 8T or “overall current density” in the winding of more than 300 A/mm²; | ||
| l. Circuits or systems designed for electromagnetic energy storage, containing components manufactured from “superconductive” materials specially designed for operation at temperatures below the “critical temperature” of at least one of their “superconductive” constituents, having all of the following: | l. Circuits or systems designed for electromagnetic energy storage, containing components manufactured from “superconductive” materials specially designed for operation at temperatures below the “critical temperature” of at least one of their “superconductive” constituents, having all of the following: | l. Circuits or systems designed for electromagnetic energy storage, containing components manufactured from “superconductive” materials specially designed for operation at temperatures below the “critical temperature” of at least one of their “superconductive” constituents, having all of the following: | l. Circuits or systems designed for electromagnetic energy storage, containing components manufactured from “superconductive” materials specially designed for operation at temperatures below the “critical temperature” of at least one of their “superconductive” constituents, having all of the following: | l. Circuits or systems designed for electromagnetic energy storage, containing components manufactured from “superconductive” materials specially designed for operation at temperatures below the “critical temperature” of at least one of their “superconductive” constituents, having all of the following: | l. Circuits or systems designed for electromagnetic energy storage, containing components manufactured from “superconductive” materials specially designed for operation at temperatures below the “critical temperature” of at least one of their “superconductive” constituents, having all of the following: | |
| l.1. Resonant operating frequencies exceeding 1 MHz; | l.1. Resonant operating frequencies exceeding 1 MHz; | l.1. Resonant operating frequencies exceeding 1 MHz; | l.1. Resonant operating frequencies exceeding 1 MHz; | l.1. Resonant operating frequencies exceeding 1 MHz; | ||
| l.2. A stored energy density of 1 MJ/m³ or more; and | l.2. A stored energy density of 1 MJ/m³ or more; and | l.2. A stored energy density of 1 MJ/m³ or more; and | l.2. A stored energy density of 1 MJ/m³ or more; and | l.2. A stored energy density of 1 MJ/m³ or more; and | ||
| l.3. A discharge time of less than 1 ms; | l.3. A discharge time of less than 1 ms; | l.3. A discharge time of less than 1 ms; | l.3. A discharge time of less than 1 ms; | l.3. A discharge time of less than 1 ms; | ||
| m. Hydrogen/hydrogen-isotope thyratrons of ceramic-metal construction and rated for a peak current of 500 A or more; | m. Hydrogen/hydrogen-isotope thyratrons of ceramic-metal construction and rated for a peak current of 500 A or more; | m. Hydrogen/hydrogen-isotope thyratrons of ceramic-metal construction and rated for a peak current of 500 A or more; | m. Hydrogen/hydrogen-isotope thyratrons of ceramic-metal construction and rated for a peak current of 500 A or more; | m. Hydrogen/hydrogen-isotope thyratrons of ceramic-metal construction and rated for a peak current of 500 A or more; | m. Hydrogen/hydrogen-isotope thyratrons of ceramic-metal construction and rated for a peak current of 500 A or more; | |
| n. Digital integrated circuits based on any compound semiconductor having an equivalent gate count of more than 300 (2 input gates); | n. Digital integrated circuits based on any compound semiconductor having an equivalent gate count of more than 300 (2 input gates); | n. Digital integrated circuits based on any compound semiconductor having an equivalent gate count of more than 300 (2 input gates); | n. Digital integrated circuits based on any compound semiconductor having an equivalent gate count of more than 300 (2 input gates); | n. Digital integrated circuits based on any compound semiconductor having an equivalent gate count of more than 300 (2 input gates); | n. Digital integrated circuits based on any compound semiconductor having an equivalent gate count of more than 300 (2 input gates); | |
| o. “Space qualified” solar cells, cell-interconnect-coverglass (CIC) assemblies, solar panels, and solar arrays; | o. “Space qualified” solar cells, cell-interconnect-coverglass (CIC) assemblies, solar panels, and solar arrays; | o. “Space qualified” solar cells, cell-interconnect-coverglass (CIC) assemblies, solar panels, and solar arrays; | o. “Space qualified” solar cells, cell-interconnect-coverglass (CIC) assemblies, solar panels, and solar arrays; | o. “Space qualified” solar cells, cell-interconnect-coverglass (CIC) assemblies, solar panels, and solar arrays; | o. “Space qualified” solar cells, cell-interconnect-coverglass (CIC) assemblies, solar panels, and solar arrays; | |
| p. Ceramic frequency filters; | p. Ceramic frequency filters; | p. Ceramic frequency filters; | p. Ceramic frequency filters; | p. Ceramic frequency filters; | p. Ceramic frequency filters; | |
| q. Cermet trimmers. | q. Cermet trimmers. | q. Cermet trimmers. | q. Cermet trimmers. | q. Cermet trimmers. | q. Cermet trimmers. | |
| 3A992 General purpose electronic equipment, as follows: | 3A992 General purpose electronic equipment, as follows: | 3A992 General purpose electronic equipment, as follows: | 3A992 General purpose electronic equipment, as follows: | 3A992 General purpose electronic equipment, as follows: | 3A992 General purpose electronic equipment, as follows: | 3A992 General purpose electronic equipment, as follows: |
| a. Electronic test equipment; | a. Electronic test equipment; | a. Electronic test equipment; | a. Electronic test equipment; | a. Electronic test equipment; | a. Electronic test equipment; | |
| b. Digital instrumentation magnetic tape data recorders having any of the following; | b. Digital instrumentation magnetic tape data recorders having any of the following; | b. Digital instrumentation magnetic tape data recorders having any of the following; | b. Digital instrumentation magnetic tape data recorders having any of the following; | b. Digital instrumentation magnetic tape data recorders having any of the following; | b. Digital instrumentation magnetic tape data recorders having any of the following; | |
| b.1. A maximum digital interface transfer rate exceeding 60 Mbit/s and employing helical scan techniques; | b.1. A maximum digital interface transfer rate exceeding 60 Mbit/s and employing helical scan techniques; | b.1. A maximum digital interface transfer rate exceeding 60 Mbit/s and employing helical scan techniques; | b.1. A maximum digital interface transfer rate exceeding 60 Mbit/s and employing helical scan techniques; | b.1. A maximum digital interface transfer rate exceeding 60 Mbit/s and employing helical scan techniques; | ||
| b.2. A maximum digital interface transfer rate exceeding 120 Mbit/s and employing fixed head techniques; or | b.2. A maximum digital interface transfer rate exceeding 120 Mbit/s and employing fixed head techniques; or | b.2. A maximum digital interface transfer rate exceeding 120 Mbit/s and employing fixed head techniques; or | b.2. A maximum digital interface transfer rate exceeding 120 Mbit/s and employing fixed head techniques; or | b.2. A maximum digital interface transfer rate exceeding 120 Mbit/s and employing fixed head techniques; or | ||
| b.3. “Space qualified”; | b.3. “Space qualified”; | b.3. “Space qualified”; | b.3. “Space qualified”; | b.3. “Space qualified”; | ||
| c. Equipment having a maximum digital interface transfer rate exceeding 60 Mbit/s and designed to convert digital video magnetic tape recorders for use as digital instrumentation data recorders; | c. Equipment having a maximum digital interface transfer rate exceeding 60 Mbit/s and designed to convert digital video magnetic tape recorders for use as digital instrumentation data recorders; | c. Equipment having a maximum digital interface transfer rate exceeding 60 Mbit/s and designed to convert digital video magnetic tape recorders for use as digital instrumentation data recorders; | c. Equipment having a maximum digital interface transfer rate exceeding 60 Mbit/s and designed to convert digital video magnetic tape recorders for use as digital instrumentation data recorders; | c. Equipment having a maximum digital interface transfer rate exceeding 60 Mbit/s and designed to convert digital video magnetic tape recorders for use as digital instrumentation data recorders; | c. Equipment having a maximum digital interface transfer rate exceeding 60 Mbit/s and designed to convert digital video magnetic tape recorders for use as digital instrumentation data recorders; | |
| d. Non-modular analogue oscilloscopes having a bandwidth of 1 GHz or greater; | d. Non-modular analogue oscilloscopes having a bandwidth of 1 GHz or greater; | d. Non-modular analogue oscilloscopes having a bandwidth of 1 GHz or greater; | d. Non-modular analogue oscilloscopes having a bandwidth of 1 GHz or greater; | d. Non-modular analogue oscilloscopes having a bandwidth of 1 GHz or greater; | d. Non-modular analogue oscilloscopes having a bandwidth of 1 GHz or greater; | |
| e. Modular analogue oscilloscope systems having either of the following: | e. Modular analogue oscilloscope systems having either of the following: | e. Modular analogue oscilloscope systems having either of the following: | e. Modular analogue oscilloscope systems having either of the following: | e. Modular analogue oscilloscope systems having either of the following: | e. Modular analogue oscilloscope systems having either of the following: | |
| e.1. A mainframe with a bandwidth of 1 GHz or greater; or | e.1. A mainframe with a bandwidth of 1 GHz or greater; or | e.1. A mainframe with a bandwidth of 1 GHz or greater; or | e.1. A mainframe with a bandwidth of 1 GHz or greater; or | e.1. A mainframe with a bandwidth of 1 GHz or greater; or | ||
| e.2. Plug-in modules with an individual bandwidth of 4 GHz or greater; | e.2. Plug-in modules with an individual bandwidth of 4 GHz or greater; | e.2. Plug-in modules with an individual bandwidth of 4 GHz or greater; | e.2. Plug-in modules with an individual bandwidth of 4 GHz or greater; | e.2. Plug-in modules with an individual bandwidth of 4 GHz or greater; | ||
| f. Analogue sampling oscilloscopes for the analysis of recurring phenomena with an effective bandwidth greater than 4 GHz; | f. Analogue sampling oscilloscopes for the analysis of recurring phenomena with an effective bandwidth greater than 4 GHz; | f. Analogue sampling oscilloscopes for the analysis of recurring phenomena with an effective bandwidth greater than 4 GHz; | f. Analogue sampling oscilloscopes for the analysis of recurring phenomena with an effective bandwidth greater than 4 GHz; | f. Analogue sampling oscilloscopes for the analysis of recurring phenomena with an effective bandwidth greater than 4 GHz; | f. Analogue sampling oscilloscopes for the analysis of recurring phenomena with an effective bandwidth greater than 4 GHz; | |
| g. Digital oscilloscopes and transient recorders, using analogue-to-digital conversion techniques, capable of storing transients by sequentially sampling single-shot inputs at successive intervals of less than 1 ns (greater than 1 giga-sample per second), digitising to 8 bits or greater resolution and storing 256 or more samples.Note: This entry controls the following components designed for analogue oscilloscopes:1. Plug-in units;2. External amplifiers;3. Pre-amplifiers;4. Sampling devices;5. Cathode ray tubes. | g. Digital oscilloscopes and transient recorders, using analogue-to-digital conversion techniques, capable of storing transients by sequentially sampling single-shot inputs at successive intervals of less than 1 ns (greater than 1 giga-sample per second), digitising to 8 bits or greater resolution and storing 256 or more samples.Note: This entry controls the following components designed for analogue oscilloscopes:1. Plug-in units;2. External amplifiers;3. Pre-amplifiers;4. Sampling devices;5. Cathode ray tubes. | g. Digital oscilloscopes and transient recorders, using analogue-to-digital conversion techniques, capable of storing transients by sequentially sampling single-shot inputs at successive intervals of less than 1 ns (greater than 1 giga-sample per second), digitising to 8 bits or greater resolution and storing 256 or more samples.Note: This entry controls the following components designed for analogue oscilloscopes:1. Plug-in units;2. External amplifiers;3. Pre-amplifiers;4. Sampling devices;5. Cathode ray tubes. | g. Digital oscilloscopes and transient recorders, using analogue-to-digital conversion techniques, capable of storing transients by sequentially sampling single-shot inputs at successive intervals of less than 1 ns (greater than 1 giga-sample per second), digitising to 8 bits or greater resolution and storing 256 or more samples.Note: This entry controls the following components designed for analogue oscilloscopes:1. Plug-in units;2. External amplifiers;3. Pre-amplifiers;4. Sampling devices;5. Cathode ray tubes. | g. Digital oscilloscopes and transient recorders, using analogue-to-digital conversion techniques, capable of storing transients by sequentially sampling single-shot inputs at successive intervals of less than 1 ns (greater than 1 giga-sample per second), digitising to 8 bits or greater resolution and storing 256 or more samples.Note: This entry controls the following components designed for analogue oscilloscopes:1. Plug-in units;2. External amplifiers;3. Pre-amplifiers;4. Sampling devices;5. Cathode ray tubes. | g. Digital oscilloscopes and transient recorders, using analogue-to-digital conversion techniques, capable of storing transients by sequentially sampling single-shot inputs at successive intervals of less than 1 ns (greater than 1 giga-sample per second), digitising to 8 bits or greater resolution and storing 256 or more samples.Note: This entry controls the following components designed for analogue oscilloscopes:1. Plug-in units;2. External amplifiers;3. Pre-amplifiers;4. Sampling devices;5. Cathode ray tubes. | |
| 3A999 Specific processing equipment as follows. | 3A999 Specific processing equipment as follows. | 3A999 Specific processing equipment as follows. | 3A999 Specific processing equipment as follows. | 3A999 Specific processing equipment as follows. | 3A999 Specific processing equipment as follows. | 3A999 Specific processing equipment as follows. |
| a. Frequency changers capable of operating in the frequency range from 300 up to 600 Hz; | a. Frequency changers capable of operating in the frequency range from 300 up to 600 Hz; | a. Frequency changers capable of operating in the frequency range from 300 up to 600 Hz; | a. Frequency changers capable of operating in the frequency range from 300 up to 600 Hz; | a. Frequency changers capable of operating in the frequency range from 300 up to 600 Hz; | a. Frequency changers capable of operating in the frequency range from 300 up to 600 Hz; | |
| b. Mass spectrometers; | b. Mass spectrometers; | b. Mass spectrometers; | b. Mass spectrometers; | b. Mass spectrometers; | b. Mass spectrometers; | |
| c. All flash x-ray machines, and components of pulsed power systems designed therefor, including Marx generators, high power pulse shaping networks, high voltage capacitors, and triggers; | c. All flash x-ray machines, and components of pulsed power systems designed therefor, including Marx generators, high power pulse shaping networks, high voltage capacitors, and triggers; | c. All flash x-ray machines, and components of pulsed power systems designed therefor, including Marx generators, high power pulse shaping networks, high voltage capacitors, and triggers; | c. All flash x-ray machines, and components of pulsed power systems designed therefor, including Marx generators, high power pulse shaping networks, high voltage capacitors, and triggers; | c. All flash x-ray machines, and components of pulsed power systems designed therefor, including Marx generators, high power pulse shaping networks, high voltage capacitors, and triggers; | c. All flash x-ray machines, and components of pulsed power systems designed therefor, including Marx generators, high power pulse shaping networks, high voltage capacitors, and triggers; | |
| d. Pulse amplifiers; | d. Pulse amplifiers; | d. Pulse amplifiers; | d. Pulse amplifiers; | d. Pulse amplifiers; | d. Pulse amplifiers; | |
| e. Time delay generation or time interval measurement equipment, as follows: | e. Time delay generation or time interval measurement equipment, as follows: | e. Time delay generation or time interval measurement equipment, as follows: | e. Time delay generation or time interval measurement equipment, as follows: | e. Time delay generation or time interval measurement equipment, as follows: | e. Time delay generation or time interval measurement equipment, as follows: | |
| e.1 Digital time delay generators having a resolution of 50 nanoseconds or less over time intervals of 1μs or greater; or | e.1 Digital time delay generators having a resolution of 50 nanoseconds or less over time intervals of 1μs or greater; or | e.1 Digital time delay generators having a resolution of 50 nanoseconds or less over time intervals of 1μs or greater; or | e.1 Digital time delay generators having a resolution of 50 nanoseconds or less over time intervals of 1μs or greater; or | e.1 Digital time delay generators having a resolution of 50 nanoseconds or less over time intervals of 1μs or greater; or | ||
| e.2 Multi-channel (three or more) or modular time interval meter and chronometry equipment having a resolution of 50 ns or less over time intervals of 1 μs or greater; | e.2 Multi-channel (three or more) or modular time interval meter and chronometry equipment having a resolution of 50 ns or less over time intervals of 1 μs or greater; | e.2 Multi-channel (three or more) or modular time interval meter and chronometry equipment having a resolution of 50 ns or less over time intervals of 1 μs or greater; | e.2 Multi-channel (three or more) or modular time interval meter and chronometry equipment having a resolution of 50 ns or less over time intervals of 1 μs or greater; | e.2 Multi-channel (three or more) or modular time interval meter and chronometry equipment having a resolution of 50 ns or less over time intervals of 1 μs or greater; | ||
| f. Chromatography and spectrometry analytical instruments | f. Chromatography and spectrometry analytical instruments | f. Chromatography and spectrometry analytical instruments | f. Chromatography and spectrometry analytical instruments | f. Chromatography and spectrometry analytical instruments | f. Chromatography and spectrometry analytical instruments | |
| 3B991 Equipment for the manufacture of electronic components and materials, and specially designed components therefor. | 3B991 Equipment for the manufacture of electronic components and materials, and specially designed components therefor. | 3B991 Equipment for the manufacture of electronic components and materials, and specially designed components therefor. | 3B991 Equipment for the manufacture of electronic components and materials, and specially designed components therefor. | 3B991 Equipment for the manufacture of electronic components and materials, and specially designed components therefor. | 3B991 Equipment for the manufacture of electronic components and materials, and specially designed components therefor. | 3B991 Equipment for the manufacture of electronic components and materials, and specially designed components therefor. |
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